NZL5V6ATT1 SC75 Dual Common Anode Zener for ESD Protection This dual monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its dual junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at a premium. http://onsemi.com CATHODE 1 3 ANODE 2 CATHODE Specification Features • • • • • SC−75 Package Allows Two Separate Unidirectional Configurations Low Leakage < 1 A @ 3 Volt Breakdown Voltage: 5.3−5.9 Volt @ 1 mA Low Capacitance (40 pF typical between terminals) ESD Protection Meeting IEC61000−4−2 3 2 1 SC−75 CASE 463 STYLE 4 Mechanical Characteristics • • • • Void Free, Transfer−Molded, Thermosetting Plastic Case Corrosion Resistant Finish, Easily Solderable Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications MARKING DIAGRAM 56 56 = Device Marking ORDERING INFORMATION Device NZL5V6ATT1 Semiconductor Components Industries, LLC, 2002 February, 2001 − Rev. 1 1 Package Shipping SC−75 3000/Tape & Reel Publication Order Number: NZL5V6ATT1/D NZL5V6ATT1 ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Parameter Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IF VC VBR VRWM IR V IR VF IT Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current VBR IPP Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK Uni−Directional TVS MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Unit PD 150 mW Maximum Junction Temperature TJmax 150 °C Operating Junction and Storage Temperature Range TJ Tstg −55 to +150 °C VPP 15 8 kV TL 260 °C Steady State Power − 1 Diode (Note 1) ESD Discharge IEC61000−4−2, Air Discharge IEC61000−4−2, Contact Discharge Lead Solder Temperature (10 seconds duration) ELECTRICAL CHARACTERISTICS Breakdown Voltage VBR @ 1 mA (Volts) Leakage Current IRM @ VRM = 3.0 V Typical Capacitance @ 0 V Bias @ 1 MHz Max VF @ IF = 10 mA Device Min Nom Max (A) (pF) (V) NZL5V6 5.3 5.6 5.9 1.0 40 1.25 1. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR−4 board with min pad. 100 % OF PEAK PULSE CURRENT PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 PEAK VALUE IRSM @ 8 s tr 90 PULSE WIDTH (tp) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 s 80 70 60 HALF VALUE IRSM/2 @ 20 s 50 40 30 tp 20 10 0 0 25 50 75 100 125 TEMPERATURE (°C) 150 0 175 20 40 t, TIME (s) 60 Figure 2. 8 X 20 s Pulse Waveform Figure 1. Steady State Power Derating Curve http://onsemi.com 2 80 NZL5V6ATT1 45 TYPICAL CAPACITANCE (pF) 1 MHz FREQUENCY PPK, PEAK POWER (W) 100 10 NOTE: Non−Repetitive Surge 1 40 35 30 25 20 15 10 5 0 10 100 tp, PULSE WIDTH (s) 1000 0 0.5 1 Figure 3. Pulse Rating Curve 2 2.5 3 3.5 BIAS VOLTAGE (V) 4 4.5 5 Figure 4. Capacitance 100 IPP, PEAK PULSE CURRENT (A) 1 IF, FORWARD CURRENT (A) 1.5 0.1 0.01 0.001 10 1.0 s SQUARE WAVE 1 0.6 0.7 1 0.8 0.9 1.1 1.2 VF, FORWARD VOLTAGE (V) 1.3 1.4 4 Figure 5. Forward Current versus Forward Voltage 4.2 4.4 5 5.2 5.4 5.6 4.6 4.8 VC, CLAMPING VOLTAGE (V) 5.8 Figure 6. Clamping Voltage versus Peak Pulse Current (Reverse Direction) http://onsemi.com 3 6 NZL5V6ATT1 PACKAGE DIMENSIONS SC−75 (SC−90, SOT−416) CASE 463−01 ISSUE B −A− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. S 2 3 D 3 PL 0.20 (0.008) G −B− DIM A B C D G H J K L S 1 M B K J 0.20 (0.008) A C L MILLIMETERS MIN MAX 0.70 0.80 1.40 1.80 0.60 0.90 0.15 0.30 1.00 BSC −−− 0.10 0.10 0.25 1.45 1.75 0.10 0.20 0.50 BSC INCHES MIN MAX 0.028 0.031 0.055 0.071 0.024 0.035 0.006 0.012 0.039 BSC −−− 0.004 0.004 0.010 0.057 0.069 0.004 0.008 0.020 BSC STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE H ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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