ETC NZL5V6ATT1/D

NZL5V6ATT1
SC75 Dual Common Anode
Zener for ESD Protection
This dual monolithic silicon voltage suppressor is designed for
applications requiring transient overvoltage protection capability. It is
intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment, and other applications. Its dual junction common
anode design protects four separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
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CATHODE
1
3
ANODE
2
CATHODE
Specification Features
•
•
•
•
•
SC−75 Package Allows Two Separate Unidirectional Configurations
Low Leakage < 1 A @ 3 Volt
Breakdown Voltage: 5.3−5.9 Volt @ 1 mA
Low Capacitance (40 pF typical between terminals)
ESD Protection Meeting IEC61000−4−2
3
2
1
SC−75
CASE 463
STYLE 4
Mechanical Characteristics
•
•
•
•
Void Free, Transfer−Molded, Thermosetting Plastic Case
Corrosion Resistant Finish, Easily Solderable
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
MARKING DIAGRAM
56
56 = Device Marking
ORDERING INFORMATION
Device
NZL5V6ATT1
 Semiconductor Components Industries, LLC, 2002
February, 2001 − Rev. 1
1
Package
Shipping
SC−75
3000/Tape & Reel
Publication Order Number:
NZL5V6ATT1/D
NZL5V6ATT1
ELECTRICAL CHARACTERISTICS
I
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Parameter
Symbol
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IF
VC VBR VRWM
IR
V
IR VF
IT
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
VBR
IPP
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
Uni−Directional TVS
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Value
Unit
PD
150
mW
Maximum Junction Temperature
TJmax
150
°C
Operating Junction and Storage Temperature Range
TJ Tstg
−55 to +150
°C
VPP
15
8
kV
TL
260
°C
Steady State Power − 1 Diode (Note 1)
ESD Discharge
IEC61000−4−2, Air Discharge
IEC61000−4−2, Contact Discharge
Lead Solder Temperature (10 seconds duration)
ELECTRICAL CHARACTERISTICS
Breakdown Voltage
VBR @ 1 mA (Volts)
Leakage Current
IRM @ VRM = 3.0 V
Typical
Capacitance
@ 0 V Bias
@ 1 MHz
Max
VF @ IF = 10 mA
Device
Min
Nom
Max
(A)
(pF)
(V)
NZL5V6
5.3
5.6
5.9
1.0
40
1.25
1. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR−4 board with min pad.
100
% OF PEAK PULSE CURRENT
PD, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
PEAK VALUE IRSM @ 8 s
tr
90
PULSE WIDTH (tp) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 s
80
70
60
HALF VALUE IRSM/2 @ 20 s
50
40
30
tp
20
10
0
0
25
50
75
100
125
TEMPERATURE (°C)
150
0
175
20
40
t, TIME (s)
60
Figure 2. 8 X 20 s Pulse Waveform
Figure 1. Steady State Power Derating Curve
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2
80
NZL5V6ATT1
45
TYPICAL CAPACITANCE (pF)
1 MHz FREQUENCY
PPK, PEAK POWER (W)
100
10
NOTE: Non−Repetitive Surge
1
40
35
30
25
20
15
10
5
0
10
100
tp, PULSE WIDTH (s)
1000
0
0.5
1
Figure 3. Pulse Rating Curve
2
2.5
3
3.5
BIAS VOLTAGE (V)
4
4.5
5
Figure 4. Capacitance
100
IPP, PEAK PULSE CURRENT (A)
1
IF, FORWARD CURRENT (A)
1.5
0.1
0.01
0.001
10
1.0 s SQUARE WAVE
1
0.6
0.7
1
0.8
0.9
1.1
1.2
VF, FORWARD VOLTAGE (V)
1.3
1.4
4
Figure 5. Forward Current versus
Forward Voltage
4.2
4.4
5
5.2 5.4 5.6
4.6 4.8
VC, CLAMPING VOLTAGE (V)
5.8
Figure 6. Clamping Voltage versus Peak Pulse
Current (Reverse Direction)
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3
6
NZL5V6ATT1
PACKAGE DIMENSIONS
SC−75 (SC−90, SOT−416)
CASE 463−01
ISSUE B
−A−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
S
2
3
D 3 PL
0.20 (0.008)
G −B−
DIM
A
B
C
D
G
H
J
K
L
S
1
M
B
K
J
0.20 (0.008) A
C
L
MILLIMETERS
MIN
MAX
0.70
0.80
1.40
1.80
0.60
0.90
0.15
0.30
1.00 BSC
−−−
0.10
0.10
0.25
1.45
1.75
0.10
0.20
0.50 BSC
INCHES
MIN
MAX
0.028
0.031
0.055
0.071
0.024
0.035
0.006
0.012
0.039 BSC
−−−
0.004
0.004
0.010
0.057
0.069
0.004
0.008
0.020 BSC
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
H
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are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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PUBLICATION ORDERING INFORMATION
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NZL5V6ATT1/D