TCPT1300X01 Vishay Semiconductors Subminiature Transmissive Optical Sensor with Phototransistor Output, RoHS Compliant, Released for Lead (Pb)-free Solder Process, AEC-Q101 Released Description The TCPT1300X01 is a compact transmissive sensor that includes an infrared emitter and a phototransistor detector, located face-to-face in a surface mount package. Pin connection Top view Cath. E Features NC • Product designed and qualified acc. AEC-Q101 for the automotive market • Package type: surface mount • Detector type: phototransistor • Dimensions: L 5.5 mm x W 4 mm x H 4 mm • Gap: 3 mm • • • • • NC Coll. A 19601 e4 Aperture: 0.3 mm Typical output current under test: IC = 0.6 mA Emitter wavelength: 950 nm Lead (Pb)-free soldering released Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC • Minimum order quantity: 2000 pcs, 2000 pcs/reel Applications • Automotive optical sensors • Accurate position sensor for encoder • Detection of motion speed Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Coupler Parameter Power dissipation Test condition Tamb ≤ 25 °C Ambient temperature range Storage temperature range Soldering temperature in accordance with fig. 15 Symbol Value Unit P 150 mW Tamb - 40 to + 85 °C Tstg - 40 to + 100 °C Tsd 260 °C Symbol Value Unit VR 5 V Input (Emitter) Parameter Test condition Reverse voltage Forward current Forward surge current tp ≤ 10 µs Power dissipation Tamb ≤ 25 °C IF 25 mA IFSM 200 mA PV 75 mW Unit Output (Detector) Symbol Value Collector emitter voltage Parameter Test condition VCEO 20 V Emitter collector voltage VECO 7 V IC 20 mA PV 75 mW Collector current Power dissipation Document Number 84778 Rev. 1.3, 20-Jul-07 Tamb ≤ 25 °C www.vishay.com 1 TCPT1300X01 Vishay Semiconductors P - Power Dissipation (mW) 200 Sensor 150 100 50 Emitter/Detector 0 0 16538 100 75 25 50 Tamb - Ambient Temperature (°C) Figure 1. Power Dissipation Limit vs. Ambient Temperature Electrical Characteristics Tamb = 25 °C, unless otherwise specified Coupler Parameter Test condition Collector current VCE = 5 V, IF = 15 mA Collector emitter saturation voltage IF = 15 mA, IC = 0.05 mA Symbol Min Typ. IC 300 600 VCEsat Max Unit µA 0.4 V Typ. Max Unit 1.2 1.4 V 10 µA Input (Emitter) Parameter Test condition Symbol Forward voltage IF = 15 mA VF Reverse current VR = 5 V IR Junction capacitance VR = 0 V, f = 1 MHz Cj Min 25 pF Output (Detector) Symbol Min Collector emitter voltage IC Parameter IC = 1 mA Test condition VCEO 20 Typ. Max Unit V Emitter collector voltage IE = 100 µA VECO 7 V Collector dark current VCE = 25 V, IF = 0, E = 0 ICEO 1 100 nA Typ. Max Unit Switching Characteristics Parameter Test condition Symbol Min Rise time IC = 0.3 mA, VCE = 5 V, RL = 100 Ω (see figure 2) tr 20.0 150 µs Fall time IC = 0.3 mA, VCE = 5 V, RL = 100 Ω (see figure 2) tf 30.0 150 µs www.vishay.com 2 Document Number 84778 Rev. 1.3, 20-Jul-07 TCPT1300X01 Vishay Semiconductors IF IF 0 0 IC +5V IF IC adjusted by I F RG = 50 Ω tp = 20 T tp = 1 ms 50 Ω 10 % 0 Channel I Oscilloscope Channel II RL CL 100 Ω tp t 100 % 90 % 1M 20 pF 20688 tp td tr t on (= t d + tr) tr td t on ts pulse duration delay time rise time turn-on time ts tf t off (= t s +t f ) t tf t off storage time fall time turn-off time 96 11698 Figure 2. Test Circuit for tr and tf Figure 3. Switching Times Typical Characteristics Tamb = 25 °C, unless otherwise specified 10 IC - Collector Current (mA) IF - Forward Current (mA) 1000 100 10 1 0.1 0 0.2 0.4 0.6 0.8 1 20589 VF - Forward Voltage (V) IF = 15 mA 1.2 1.1 IC - Collector Current (mA) VF - Forward Voltage (V) 10 100 10 1.3 IF = 25 mA 1 IF = 15 mA IF = 5 mA 0.1 IF = 3 mA 0.01 - 20 0 20 40 60 80 Tamb - Ambient Temperature (°C) Document Number 84778 0.1 100 Figure 5. Forward Voltage vs. Ambient Temperature Rev. 1.3, 20-Jul-07 1 IF - Forward Current (mA) Figure 6. Collector Current vs. Forward Current 1.4 20592 0.01 20591 Figure 4. Forward Current vs. Forward Voltage 1.0 - 40 0.1 0.001 0.1 1.2 1.4 1.6 1.8 2 2.2 VCE = 5 V 1 20689 1 10 100 VCE - Collector Emitter Voltage (V) Figure 7. Collector Current vs. Collector Emitter Voltage www.vishay.com 3 TCPT1300X01 Vishay Semiconductors 1 IC = 50 µA 0.18 0.16 IF = 5 mA 0.14 0.12 0.10 IF = 15 mA 0.08 0.06 0.04 0.02 0.00 - 40 - 20 0 20 40 60 80 s 0.8 0.6 0.4 0.2 0 - 1.5 100 -1 20595 Tamb - Ambient Tempearture (°C) 20590 IC rel - Relative Collector Current VCEsat - Coll. Emitter Saturation Voltage (V) 0.20 Figure 8. Collector Emitter Saturation Voltage vs. Ambient Temperature - 0.5 0 IF = 15 mA 0.5 0.4 0.3 IF = 5 mA 0.2 0.1 0.0 - 40 S ICrel - Rel. Collector Current 0.6 1 ± 0.2 IC - Collector Current (mA) 1.5 1 VCE = 5 V Optical Axis 0.5 0 - 20 20593 0 20 40 60 80 - 1.5 100 Tamb - Ambient Temperature (°C) Figure 9. Collector Current vs. Ambient Temperature -1 - 0.5 0 0.5 1 1.5 S - Vertical Displacement (mm) 20610 Figure 12. Relative Collector Current vs. Vertical Displacement 10000 100 90 IF = 0 tr/tf - Rise/Fall Time (µs) ICE0 - Collector Dark Current (nA) 1 Figure 11. Relative Collector Current vs. Horizontal Displacement 0.7 1000 VCE = 70 V VCE = 25 V VCE = 5 V 100 10 80 RL = 100 Ω 70 60 50 40 tf 30 tr 20 10 1 0 0 20594 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Figure 10. Collector Dark Current vs. Ambient Temperature www.vishay.com 4 0.5 s - Horizontal Displacement 0 20599 250 500 750 1000 1250 1500 1750 2000 IC - Collector Current (µA) Figure 13. Rise/Fall Time vs. Collector Current Document Number 84778 Rev. 1.3, 20-Jul-07 TCPT1300X01 Vishay Semiconductors Floor Life IF = 15 mA + VC = 5 V Level 1, acc. JEDEC, J-STD-020. No time limit. Reflow Solder Profile 300 74HCT14 VE Temperature (°C) 10 kΩ UQ 13887 GND 200 max. 30 s 150 max. 100 s max. 120 s 100 max. Ramp Down 6 °C/s max. Ramp Up 3 °C/s 50 Figure 14. Application example max. 260 °C 245 °C 255 255°C°C 240 °C 217 °C 250 0 0 19841 50 100 150 200 250 300 Time (s) Figure 15. Lead (Pb)-free Reflow Solder Profile acc. J-STD-020C Reliability Tests in Reference to AEC-Q101 Release Condition Duration Lot Size - Rejects High temperature storage Test Tstg(max) = 100 °C 1000 h 3 x 50 pcs - 0 pcs Low temperature storage Tstg(min) = - 40 °C 1000 h 3 x 50 pcs - 0 pcs Temperature cycling - 40 °C/+ 100 °C 1000 x 3 x 77 pcs - 0 pcs 85 °C/85 % RH, Emitters: VR = 4 V, detectors: VCEO = 5 V 1000 h 3 x 77 pcs - 0 pcs Emitters: IF = 80 mA DC, detectors: VCE = 16 V, duty cycle: 2 min on, 2 min off, Tamb = 25 °C 1000 h (15000 cycles) 3 x 77 pcs - 0 pcs H3TRB Intermittent operational life Document Number 84778 Rev. 1.3, 20-Jul-07 www.vishay.com 5 TCPT1300X01 Vishay Semiconductors Package Dimensions in millimeters 19591 www.vishay.com 6 Document Number 84778 Rev. 1.3, 20-Jul-07 TCPT1300X01 Vishay Semiconductors Package Dimensions in millimeters 20601 Document Number 84778 Rev. 1.3, 20-Jul-07 www.vishay.com 7 TCPT1300X01 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 8 Document Number 84778 Rev. 1.3, 20-Jul-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1