VISHAY TCRT5000L

TCRT5000(L)
Vishay Semiconductors
Reflective Optical Sensor with Transistor Output
Description
TCRT5000
TCRT5000L
The TCRT5000 and TCRT500L are reflective sensors
which include an infrared emitter and phototransistor
in a leaded package which blocks visible light. The
package includes two mounting clips. TCRT5000L is
the long lead version.
C
A
E
C
Features
• Package type: Leaded
• Detector type: Phototransistor
• Dimensions:
e2
L 10.2 mm x W 5.8 mm x H 7.0 mm
• Peak operating distance: 2.5 mm
• Operating range: 0.2 mm to 15 mm
• Typical output current under test: IC = 1 mA
• Daylight blocking filter
• Emitter wavelength 950 nm
• Lead (Pb)-free soldering released
• Lead (Pb)-free component in accordance to RoHS
2002/95/EC and WEEE 2002/96/EC
19156
Top view
Applications
• Position sensor for shaft encoder
• Detection of reflective material such as paper, IBM
cards, magnetic tapes etc.
• Limit switch for mechanical motions in VCR
• General purpose - wherever the space is limited
Order Instructions
Part Number
Remarks
Minimum Order Quantity
TCRT5000
3.5 mm lead length
4500 pcs, 50 pcs/tube
TCRT5000L
15 mm lead length
2400 pcs, 48 pcs/tube
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Input (Emitter)
Symbol
Value
Reverse voltage
Parameter
Test condition
VR
5
V
Forward current
IF
60
mA
Forward surge current
tp ≤ 10 µs
Power dissipation
Tamb ≤ 25 °C
Junction temperature
Document Number 83760
Rev. 1.6, 04-Sep-06
Unit
IFSM
3
A
PV
100
mW
Tj
100
°C
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TCRT5000(L)
Vishay Semiconductors
Output (Detector)
Symbol
Value
Unit
Collector emitter voltage
Parameter
Test condition
VCEO
70
V
Emitter collector voltage
VECO
5
V
IC
100
mA
PV
100
mW
Tj
100
°C
Symbol
Value
Unit
Ptot
200
mW
Tamb
- 25 to + 85
°C
Tstg
- 25 to + 100
°C
Tsd
260
°C
Collector current
Tamb ≤ 55 °C
Power dissipation
Junction temperature
Sensor
Parameter
Test condition
Tamb ≤ 25 °C
Total power dissipation
Operation temperature range
Storage temperature range
2 mm from case, t ≤ 10 s
Soldering temperature
P - Power Dissipation (mW)
300
Coupled device
200
Phototransistor
100
IR - diode
0
25
0
95 11071
50
75
100
Tamb - Ambient Temperature (°C)
Figure 1. Power Dissipation Limit vs. Ambient Temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Input (Emitter)
Typ.
Max
Unit
Forward voltage
Parameter
IF = 60 mA
Test condition
Symbol
VF
Min
1.25
1.5
V
Junction capacitance
VR = 0 V, f = 1 MHz
Cj
17
Radiant intensity
IF = 60 mA, tP = 20 ms
IE
21
mW/sr
Peak wavelength
IF = 100 mA
λP
Virtual source diameter
Method: 63 % encircled energy
Ø
Test condition
pF
940
nm
2.1
mm
Output (Detector)
Symbol
Min
Collector emitter voltage
Parameter
IC = 1 mA
VCEO
70
V
Emitter collector voltage
IE = 100 µA
VECO
7
V
Collector dark current
VCE = 20 V, IF = 0, E = 0
ICEO
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2
Typ.
10
Max
200
Unit
nA
Document Number 83760
Rev. 1.6, 04-Sep-06
TCRT5000(L)
Vishay Semiconductors
Sensor
Parameter
Test condition
Collector current
VCE = 5 V, IF = 10 mA,
D = 12 mm
Collector emitter saturation
voltage
IF = 10 mA, IC = 0.1 mA,
D = 12 mm
1)
See figure 3
2)
Test surface: Mirror (Mfr. Spindler a. Hoyer, Part No 340005)
Symbol
IC
1,2)
Min
Typ.
Max
Unit
0.5
1
2.1
mA
0.4
V
VCEsat 1,2)
94 9226
IF
IC
VCC
Flat Mirror
∅ = 22.5 mm
Rem. 2
d = working distance
D = Distance
12 ± 0.2 mm
7.0 ± 0.2 mm
A
96 12314
Figure 2. Test Circuit
Figure 3. Test Circuit
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
CTR rel - Relative Current Transfer Ratio
I F - Forward Current (mA)
1000
100
10
1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
96 11862
V F - Forward Voltage (V)
Figure 4. Forward Current vs. Forward Voltage
Document Number 83760
Rev. 1.6, 04-Sep-06
1.2
1.1
VCE = 5 V
I F = 20 mA
1.0
0.9
0.8
0.7
0.6
- 30 - 20 -10 0 10 20 30 40 50 60 70 80 90 100
96 11762
Tamb - Ambient Temperature (°C)
Figure 5. Relative Current Transfer Ratio vs.
Ambient Temperature
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TCRT5000(L)
Vishay Semiconductors
1.2
10
I Crel - Relative Collector Current
IC - Collector Current (mA)
VCE = 5 V
1
0.1
0.01
0.001
0.1
96 11763
VCE = 10 V
I F = 20 mA
1.0
0.8
0.6
0.4
0.2
0.0
1
10
100
0
96 11766
I F - Forward Current (mA)
Figure 6. Collector Current vs. Forward Current
4
8
10 12 14 16
2
6
d - Distance to Reflecting Card (mm)
Figure 9. Relative Collector Current vs. Distance
IC - Collector Current (mA)
10
I F = 50 mA
20 mA
1
10 mA
5 mA
2 mA
0.1
1 mA
0.01
0.1
96 11764
1
10
100
VCE - Collector Emitter Voltage (V)
Figure 7. Collector Emitter Saturation Voltage vs. Collector Current
CTR - Current Transfer Ratio (%)
100
VCE = 5 V
10
1
0.1
0.1
96 11765
1
10
I F - Forward Current (mA)
100
Figure 8. Current Transfer Ratio vs. Forward Current
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Document Number 83760
Rev. 1.6, 04-Sep-06
TCRT5000(L)
Vishay Semiconductors
Package Dimensions in mm
96 12073
Document Number 83760
Rev. 1.6, 04-Sep-06
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TCRT5000(L)
Vishay Semiconductors
95 11267
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Document Number 83760
Rev. 1.6, 04-Sep-06
TCRT5000(L)
Vishay Semiconductors
TCRT5000, Tube Dimensions
20298
TCRT5000L, Tube Dimensions
20299
Document Number 83760
Rev. 1.6, 04-Sep-06
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TCRT5000(L)
VISHAY
Vishay Semiconductors
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respectively
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substances and do not contain such substances.
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Document Number 83760
Rev. 1.6, 04-Sep-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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Document Number: 91000
Revision: 18-Jul-08
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