VISHAY TCST1030L

TCST1030(L)
Vishay Semiconductors
Transmissive Optical Sensor with Phototransistor Output
Description
The TCST1030 and TCST1030L are transmissive
sensors that include an infrared emitter and phototransistor, located face-to-face on the optical axes
in a leaded package which blocks visible light.
TCST1030L is the long lead version.
Features
• Package type: Leaded
• Detector type: Phototransistor
• Dimensions:
L 8.3 mm x W 4.7 mm x H 8.15 mm
•
•
•
•
•
•
•
e4
Gap: 3 mm
Aperture: none
Typical output current under test: IC = 2.4 mA
Daylight blocking filter
Emitter wavelength 950 nm
Lead (Pb)-free soldering released
Lead (Pb)-free component in accordance to RoHS
2002/95/EC and WEEE 2002/96/EC
Applications
•
•
•
•
Optical switch
Shaft encoder
Detection of opaque material such as paper
Detection of magnetic tapes
Order Instructions
Part Number
Remarks
Minimum Order Quantity
TCST1030
3.4 mm lead length
5200 pcs, 65 pcs/tube
TCST1030L
16 mm lead length
2600 pcs, 65 pcs/tube
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Coupler
Parameter
Value
Unit
Ptot
250
mW
Operation temperature range
Tamb
- 25 to + 85
°C
Storage temperature range
Tstg
- 25 to + 100
°C
Tsd
260
°C
Total power dissipation
Soldering temperature
Document Number 83763
Rev. 1.6, 16-Aug-06
Test condition
Tamb ≤ 25 °C
1.6 mm from case, t ≤ 10 s
Symbol
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TCST1030(L)
Vishay Semiconductors
Input (Emitter)
Symbol
Value
Unit
Reverse voltage
Parameter
Test condition
VR
6
V
Forward current
IF
60
mA
IFSM
3
A
PV
100
mW
Tj
100
°C
Unit
Forward surge current
tp ≤ 10 µs
Power dissipation
Tamb ≤ 25 °C
Junction temperature
Output (Detector)
Symbol
Value
Collector emitter voltage
Parameter
Test condition
VCEO
70
V
Emitter collector voltage
VECO
7
V
Collector current
Power dissipation
Tamb ≤ 25 °C
Junction temperature
IC
100
mA
PV
150
mW
Tj
100
°C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Coupler
Symbol
Min
Typ.
Collector current
Parameter
VCE = 5 V, IF = 10 mA
Test condition
IC
1.2
2.4
Collector emitter saturation
voltage
IF = 10 mA, IC = 1 mA
VCEsat
Max
Unit
mA
0.8
V
Unit
Input (Emitter)
Typ.
Max
Forward voltage
Parameter
IF = 60 mA
Test condition
Symbol
VF
Min
1.25
1.5
Junction capacitance
VR = 0, f = 1 MHz
Cj
50
V
pF
Output (Detector)
Parameter
Symbol
Min
Collector emitter voltage
IC = 1 mA
Test condition
VCEO
Typ.
Max
Unit
70
V
Emitter collector voltage
IE = 10 µA
VECO
7
V
Collector dark current
VCE = 25 V, IF = 0, E = 0
ICEO
10
100
nA
Typ.
Max
Unit
Switching Characteristics
Parameter
Test condition
Symbol
Min
Turn-on time
IC = 1 mA, VCE = 5 V,
RL = 100 Ω (see figure 1)
ton
15.0
µs
Turn-off time
IC = 1 mA, VCE = 5 V,
RL = 100 Ω (see figure 1)
foff
10.0
µs
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Document Number 83763
Rev. 1.6, 16-Aug-06
TCST1030(L)
Vishay Semiconductors
+5V
IF
IF
0
400
RG = 50 Ω
tp
= 0.01
T
t p = 50 µs
Channel I
Oscilloscope
R L ≥ 1 MΩ
CL ≤ 20 pF
Channel II
50 Ω
100 Ω
P - Power Dissipation (mW)
IC = 1 mA; adjusted by I F
300
Coupled device
200
Phototransistor
IR - diode
100
0
0
20223
95 11088
Figure 1. Test Circuit for ton and toff
IF
30
60
90
120
150
Tamb - Ambient Temperature (°C)
Figure 3. Power Dissipation Limit vs. Ambient Temperature
96 11698
0
tp
IC
t
100 %
90 %
10 %
0
tp
td
tr
ton (=td+ t r )
tr
td
ton
ts
pulse duration
delay time
rise time
turn-on time
ts
tf
toff (= ts + tf)
tf
toff
t
storage time
fall time
turn-off time
Figure 2. Switching Times
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
CTR rel - Relative Current Transfer Ratio
I F - Forward Current (mA)
1000
100
10
1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
96 11862
V F - Forward Voltage (V)
Figure 4. Forward Current vs. Forward Voltage
Document Number 83763
Rev. 1.6, 16-Aug-06
1.2
1.1
VCE = 5 V
I F = 20 mA
1.0
0.9
0.8
0.7
0.6
- 30 - 20 -10 0 10 20 30 40 50 60 70 80 90 100
96 11767
Tamb - Ambient Temperature (°C)
Figure 5. Relative Current Transfer Ratio vs.
Ambient Temperature
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TCST1030(L)
Vishay Semiconductors
100
CTR - Current Transfer Ratio (%)
ICEO - Collector Dark Current (nA)
10000
VCE = 25 V
IF = 0
1000
100
10
95 11090
25
50
75
Tamb - Ambient Temperature (°C)
100
Figure 9. Current Transfer Ratio vs. Forward Current
20
VCE = 10 V
ton / t off - Turn on/Turn off Time (µs)
I C - Collector Current (mA)
10
1
0.1
96 11768
1
10
I F - Forward Current (mA)
t off
0
2
0
6
4
8
10
I C - Collector Current (mA)
Figure 10. Turn on/off Time vs. Collector Current
5 mA
2 mA
1 mA
0.1
1
100
10
VCE - Collector Emitter Voltage (V)
I Crel - Relative Collector Current
IC - Collector Current (mA)
10 mA
1
Figure 8. Collector Current vs. Collector Emitter Voltage
4
t on
5
130
I F = 20 mA
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10
95 11086
10
96 11769
Non saturated
operation
VS = 5 V
R L = 100 Ω
15
100
Figure 7. Collector Current vs. Forward Current
0.01
0.1
100
10
1
I F - Forward Current (mA)
96 11770
Figure 6. Collector Dark Current vs. Ambient Temperature
0.01
0.1
10
1
0.1
1
0
VCE = 5 V
0
110
s
90
70
50
30
10
0.4
95 11087
0.2
0
0.2
0.4
s - Displacement (mm)
Figure 11. Relative Collector Current vs. Displacement
Document Number 83763
Rev. 1.6, 16-Aug-06
TCST1030(L)
Vishay Semiconductors
Package Dimensions in mm
96 12074
Document Number 83763
Rev. 1.6, 16-Aug-06
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TCST1030(L)
Vishay Semiconductors
95 11268
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Document Number 83763
Rev. 1.6, 16-Aug-06
TCST1030(L)
Vishay Semiconductors
Tube Dimensions in mm
20253
Document Number 83763
Rev. 1.6, 16-Aug-06
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TCST1030(L)
VISHAY
Vishay Semiconductors
20254
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Document Number 83763
Rev. 1.6, 16-Aug-06
TCST1030(L)
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 83763
Rev. 1.6, 16-Aug-06
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000
Revision: 18-Jul-08
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