CY62127DV18 MoBL2® ADVANCE INFORMATION 1M (64K x 16) Static RAM Features • Very high speed: 55 ns • Voltage range: 1.65V to 1.95V • Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 2.5 mA @ f = fMAX • Ultra-low standby power • Easy memory expansion with CE1, CE2 and OE features • Automatic power-down when deselected • CMOS for optimum speed/power • Packages offered in a 48-ball FBGA and a 44-pin TSOP Type II Functional Description[1] The CY62127DV18 is a high-performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW or both BHE and BLE are HIGH. The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW, outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH) or during a write operation (Chip Enable 1 (CE1) LOW and Chip Enable 2 (CE2) HIGH and WE LOW). Writing to the device is accomplished by taking Chip Enable 1 (CE1) LOW and Chip Enable 2 (CE2) HIGH and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A15). Reading from the device is accomplished by taking Chip Enable 1 (CE1) LOW and Chip Enable 2 (CE2) HIGH and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O8 to I/O15. See the truth table at the back of this data sheet for a complete description of read and write modes. Logic Block Diagram 64K × 16 RAM ARRAY 2048 x 32 x 16 SENSE AMPS A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 ROW DECODER DATA IN DRIVERS I/O0 –I/O7 I/O8 –I/O15 BHE WE A15 A14 A13 A12 A11 COLUMN DECODER CE2 CE1 OE BLE Power-down Circuit CE2 BHE BLE CE1 Note: 1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05226 Rev. ** • 3901 North First Street • San Jose • CA 95134 • 408-943-2600 Revised September 24, 2002 CY62127DV18 MoBL2® ADVANCE INFORMATION Pin Configuration[2] TSOP II (Forward) Top View A4 A3 A2 A1 A0 CE 1 I/O1 I/O2 I/O3 I/O4 VCC VSS I/O5 I/O6 I/O7 I/O8 WE A15 A14 A13 A12 NU 1 44 2 3 43 42 4 41 40 39 38 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE BH E BLE I/O16 I/O15 I/O14 I/O13 VSS VCC I/O12 I/O11 I/O10 I/O9 CE2 A8 A9 A10 A11 DNU 1 FBGA (Top View) 2 3 4 5 6 BLE OE A0 A1 A2 CE 2 A I/O8 B HE A3 A4 CE 1 I/O0 B I/O9 I/O10 A5 A6 I/O1 I/O2 C VS S I/O11 DNU A7 I/O3 VCC D VCC I/O12 DNU DNU I/O4 VS S E I/O14 I/O13 A14 A15 I/O5 I/O6 F I/O15 DNU A12 A13 WE I/O7 G A9 A10 A11 DNU H DNU A8 Note: 2. DNU pins are to be connected to VSS or left open. Document #: 38-05226 Rev. ** Page 2 of 13 CY62127DV18 MoBL2® ADVANCE INFORMATION Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage to Ground Potential .........................................................−0.2V to VCCMAX + 0.2V DC Voltage Applied to Outputs in High-Z State[3] ....................................−0.2V to VCC + 0.2V DC Input Voltage[3] ................................ −0.2V to VCC + 0.2V Output Current into Outputs (LOW)............................. 20 mA Static Discharge Voltage.......................................... > 2001V (per MIL-STD-883, Method 3015) Latch-up Current .................................................... > 200 mA Operating Range Range Ambient Temperature (TA) VCC Industrial −40°C to +85°C 1.65V to 1.95V Product Portfolio Power Dissipation Operating, Icc (mA) VCC Range(V) Product CY62127DV18L [4] Min. Typ. 1.65 1.8 CY62127DV18LL Max. Speed (ns) 1.95 55 55 f = 1 MHz Typ. [4] 0.5 Max. 1 f = fMAX Standby, ISB2 (µA) Max. Typ.[4] Max. 2.5 5 0.5 3 2.5 5 0.5 2 Typ. [4] Notes: 3. VIL(min.) = -2.0V for pulse durations less than 20 ns. 4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25°C. Document #: 38-05226 Rev. ** Page 3 of 13 CY62127DV18 MoBL2® ADVANCE INFORMATION DC Electrical Characteristics (Over the Operating Range) CY62127DV18-55 Parameter Description Test Conditions Min. Typ.[4] Max. Unit VOH Output HIGH Voltage IOH = −0.1 mA VCC = 1.65V VOL Output LOW Voltage IOL = 0.1 mA VCC = 1.65V 0.2 V VIH Input HIGH Voltage 1.4 VCC + 0.2 V VIL Input LOW Voltage –0.2 0.4 V 1.4 V IIX Input Leakage Current GND < VI < VCC –1 +1 µA IOZ Output Leakage Current GND < VO < VCC, Output Disabled –1 +1 µA ICC VCC Operating Supply Cur- f = fMAX = 1/tRC rent f = 1 MHz mA ISB1 ISB2 Vcc = 1.95V, IOUT = 0mA, CMOS level Automatic CE Power-down Current − CMOS Inputs CE1 > VCC − 0.2V, CE2 < 0.2V, VIN > VCC − 0.2V, VIN < 0.2V, f = fMAX (Address and Data Only), f = 0 (OE, WE, BHE and BLE) Automatic CE Power-down Current − CMOS Inputs CE1 > VCC − 0.2V, CE2 < 0.2V, VIN > VCC − 0.2V or VIN < 0.2V, f = 0, VCC=1.95V 2.5 5 0.5 1 L 0.5 3 LL 0.5 2 L 0.5 3 LL 0.5 2 µA µA Capacitance [5] Parameter Description CIN Input Capacitance COUT Output Capacitance Test Conditions TA = 25°C, f = 1 MHz VCC = VCC(typ) Max. Unit 6 pF 8 pF Thermal Resistance Parameter Description θJA Thermal Resistance (Junction to Ambient)[5] θJC Thermal Resistance (Junction to Case)[5] Test Conditions BGA Unit Still Air, soldered on a 3 x 4.5 inch, two-layer printed circuit board 55 C/W 16 C/W Note: 5. Tested initially and after any design or proces changes that may affect these parameters. Document #: 38-05226 Rev. ** Page 4 of 13 CY62127DV18 MoBL2® ADVANCE INFORMATION AC Test Loads and Waveforms R1 ALL INPUT PULSES VCC VCC Typ UTPUT 10% 90% 10% 90% GND R2 CL = 30 pF Rise Time: 1 V/ns INCLUDING JIG AND SCOPE Equivalent to: Fall Time: 1 V/ns THÉVENIN EQUIVALENT OUTPUT RTH V Parameters 1.8V UNIT R1 1350 0 Ω R2 1080 0 Ω R TH 6000 Ω VT H 0.80 V Data Retention Characteristics Parameter Description Conditions VDR VCC for Data Retention ICCDR Data Retention Current tCDR[5] Chip Deselect to Data Retention Time tR[6] Operation Recovery Time Min. Typ.[4] Max. Unit 1.95 V L 1 µA LL TBD 1 VCC = 1V, CE1 > VCC − 0.2V, CE2 < 0.2V, VIN > VCC − 0.2V or VIN < 0.2V 0 ns tRC ns Data Retention Waveform[7] VCC VCC(min.) tCDR DATA RETENTION MODE VDR > 1.0V VCC(min.) tR CE1 or BHE . BLE or CE2 Notes: 6. Full device operation requires linear VCC ramp from VDR to VCC(min.) > 100 µs or stable at VCC(min.) > 100 µs. . 7. BHE BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE. Document #: 38-05226 Rev. ** Page 5 of 13 CY62127DV18 MoBL2® ADVANCE INFORMATION Switching Characteristics (Over the Operating Range)[8] CY62127DV18-55 Parameter Description Min. Max. Unit Read Cycle tRC Read Cycle Time 55 tAA Address to Data Valid tOHA Data Hold from Address Change tACE CE1 LOW or CE2 HIGH to Data Valid 55 ns tDOE OE LOW to Data Valid 25 ns tLZOE OE LOW to Low-Z[9] tHZOE OE HIGH to High-Z[9,11] 55 10 ns 20 [9] tLZCE CE1 LOW or CE2 HIGH to Low-Z CE1 HIGH or CE2 LOW to High-Z[9,11] tPU CE1 LOW or CE2 HIGH to Power-up tPD CE1 HIGH or CE2 LOW to Power-down tDBE BLE/BHE LOW to Data Valid tLZBE[10] BLE/BHE LOW to Low-Z[9] tHZBE BLE/BHE HIGH to High-Z[9,11] ns ns 5 tHZCE Write ns 10 ns ns 20 ns 55 ns 0 ns 55 5 ns ns 20 ns Cycle[12] tWC Write Cycle Time 55 ns tSCE CE1 LOW or CE2 HIGH to Write End 45 ns tAW Address Set-up to Write End 45 ns tHA Address Hold from Write End 0 ns tSA Address Set-up to Write Start 0 ns tPWE WE Pulse Width 40 ns tBW BLE/BHE LOW to Write End 45 ns tSD Data Set-up to Write End 25 ns tHD Data Hold from Write End 0 tHZWE WE LOW to High-Z[9,11] tLZWE WE HIGH to Low-Z[9] ns 20 10 ns ns Notes: 8. Test conditions assume signal transition time of 3 ns or less, timing reference levels of VCC(typ.)/2, input pulse levels of 0 to VCC(typ.), and output loading of the specified IOL/IOH and 30-pF load capacitance. 9. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 10. If both byte enables are toggled together, this value is 10 ns. 11. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high-impedance state. 12. The internal Write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE and/or BLE = VIL, CE2 = VIH. All signals must be ACTIVE to initiate a Write and any of these signals can terminate a Write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates the Write. Document #: 38-05226 Rev. ** Page 6 of 13 CY62127DV18 MoBL2® ADVANCE INFORMATION Switching Waveforms Read Cycle No. 1 (Address Transition Controlled)[13, 14] tRC ADDRESS tAA tOHA ATA OUT DATA VALID PREVIOUS DATA VALID Read Cycle No. 2 (OE Controlled)[14, 15] ADDRESS t RC CE 1 t PD t HZCE CE2 tACE BHE /BLE t DBE t HZBE t LZBE OE t HZOE t DOE DATA OUT tLZOE HIGH IMPEDANCE HIGH IMPEDANCE DATA VALID t LZCE VCC SUPPLY CURRENT tPU 50% 50% I CC I SB Notes: 13. Device is continuously selected. OE, CE1 = VIL, BHE and/or BLE = VIL, CE2 = VIH. 14. WE is HIGH for Read cycle. 15. Address valid prior to or coincident with CE1, BHE, BLE transition LOW and CE2 transition HIGH. Document #: 38-05226 Rev. ** Page 7 of 13 CY62127DV18 MoBL2® ADVANCE INFORMATION Switching Waveforms (continued) Write Cycle No. 1 (WE Controlled) [12, 16, 17, 18] t WC ADDRESS tSCE CE1 CE2 tAW t HA t SA t PWE WE tBW BHE /BLE OE tSD ATA I/O t HD DATAIN VALID DON’T CARE t HZOE Write Cycle No. 2 (CE1 or CE2 Controlled) [12, 16, 17, 18] t WC ADDRESS t SCE CE 1 CE 2 t SA t AW t HA t PWE WE t BW BHE /BLE OE t SD DATA I/O t HD DATA IN VALID DON’T CARE t HZOE Notes: 16. Data I/O is high-impedance if OE = VIH. 17. If CE1 goes HIGH or CE2 goes LOW simultaneously with WE HIGH, the output remains in a high-impedance state. 18. During the DON’T CARE period in the DATA I/O waveform, the I/Os are in output state and input signals should not be applied. Document #: 38-05226 Rev. ** Page 8 of 13 CY62127DV18 MoBL2® ADVANCE INFORMATION Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, OE LOW)[17, 18] tWC ADDRESS tSCE CE1 CE2 tAW tHA tSA tPWE WE tHD tSD DATA I/O DATAIN VALID DON’T CARE tLZWE tHZWE Write Cycle No. 4 (BHE/BLE Controlled, OE LOW)[17] t WC ADDRESS CE 1 CE 2 t SCE t AW t HA t BW BHE /BLE t SA t PWE WE t SD DATA I/O DON’T CARE Document #: 38-05226 Rev. ** t HD DATAIN VALID Page 9 of 13 CY62127DV18 MoBL2® ADVANCE INFORMATION Truth Table CE 1 CE 2 WE OE BHE BLE Input / Outputs Mode Power H X X X X X High Z Deselect/Power-down Standby(I SB ) X L X X X X High Z Deselect/Power-down Standby(I SB ) X X X X H H High Z Deselect/Power-down Standby(I SB ) L H H L L L Data Out(I/O0– I/O15) Read Active(I CC) L H H L H L Data Out(I/O0– I/O7); High Z (I/O8– I/O15) Read Active(I CC) L H H L L H High Z (I/O0– I/O7); Data Out(I/O8– I/O15) Read Active(I CC) L H H H L H High Z Output Disabled Active(I CC) L H H H H L High Z Output Disabled Active(I CC) L H H H L L High Z Output Disabled Active(I CC) L H L X L L Data In (I/O0– I/O15) Write Active(I CC) L H L X H L Data In (I/O0– I/O7); High Z (I/O8– I/O15) Write Active(I CC) L H L X L H High Z (I/O0– I/O7); Data In (I/O8– I/O15) Write Active(I CC) Ordering Information Speed (ns) 55 Ordering Code Package Name Package Type CY62127DV18L-55BVI BV48A 48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm) CY62127DV18LL-55BVI BV48A 48-ball Fine Pitch BGA (6 mm x 8 mm x 1 mm) CY62127DV18L-55ZI Z44 44-lead TSOP Type II CY62127DV18LL-55ZI Z44 44-lead TSOP Type II Document #: 38-05226 Rev. ** Operating Range Industrial Page 10 of 13 ADVANCE INFORMATION CY62127DV18 MoBL2® Package Diagrams 48-ball VFBGA (6 x 8 x 1 mm) BV48A 51-85150-*A Document #: 38-05226 Rev. ** Page 11 of 13 ADVANCE INFORMATION CY62127DV18 MoBL2® 44-pin TSOP II Z44 51-85087-A MoBL is a registered trademark, and MoBL2 and More Battery Life are trademarks of Cypress Semiconductor. All product and company names mentioned in this document are the trademarks of their respective holders. Document #: 38-05226 Rev. ** Page 12 of 13 © Cypress Semiconductor Corporation, 2002. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. ADVANCE INFORMATION CY62127DV18 MoBL2® Document History Page Document Title: CY62127DV18 MoBL2® 1M (64K x 16) Static RAM Document Number: 38-05226 REV. ECN NO. Issue Date Orig. of Change ** 118006 10/01/02 CDY Document #: 38-05226 Rev. ** Description of Change New Data Sheet Page 13 of 13