PESD3V3S4UF; PESD5V0S4UF Unidirectional quadruple ESD protection diode arrays Rev. 01 — 17 January 2008 Product data sheet 1. Product profile 1.1 General description Unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in a small SOT886 Surface-Mounted Device (SMD) plastic package designed to protect up to four signal lines from the damage caused by ESD and other transients. 1.2 Features n n n n ESD protection of up to four lines Max. peak pulse power: PPP = 110 W Low clamping voltage: VCL = 11 V Ultra low leakage current: IRM = 4 nA n n n n ESD protection up to 30 kV IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5 (surge); IPP = 10 A AEC-Q101 qualified 1.3 Applications n Computers and peripherals n Audio and video equipment n Cellular handsets and accessories n Communication systems n Portable electronics 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit PESD3V3S4UF - - 3.3 V PESD5V0S4UF - - 5.0 V PESD3V3S4UF - 110 300 pF PESD5V0S4UF - 85 220 pF Per diode VRWM Cd reverse standoff voltage diode capacitance f = 1 MHz; VR = 0 V PESD3V3S4UF; PESD5V0S4UF NXP Semiconductors Unidirectional quadruple ESD protection diode arrays 2. Pinning information Table 2. Pinning Pin Description 1 cathode (diode 1) 2 common anode 3 4 5 common anode 6 cathode (diode 4) Simplified outline 1 2 Symbol 3 1 6 cathode (diode 2) 2 5 cathode (diode 3) 3 4 6 5 bottom view 006aaa156 4 3. Ordering information Table 3. Ordering information Type number PESD3V3S4UF Package Name Description Version XSON6 plastic extremely thin small outline package; no leads; 6 terminals; body 1 × 1.45 × 0.5 mm SOT886 PESD5V0S4UF 4. Marking Table 4. Marking codes Type number Marking code[1] PESD3V3S4UF A3 PESD5V0S4UF A4 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions peak pulse power tp = 8/20 µs peak pulse current tp = 8/20 µs Min Max Unit [1][2] - 110 W [1][2] - 10 A Per diode PPP IPP PESD3V3S4UF_PESD5V0S4UF_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 17 January 2008 2 of 13 PESD3V3S4UF; PESD5V0S4UF NXP Semiconductors Unidirectional quadruple ESD protection diode arrays Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per device Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1, 3, 4 or 6 to pin 2 or 5. Table 6. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions electrostatic discharge voltage IEC 61000-4-2 (contact discharge) Min Max Unit - 30 kV - 10 kV Per diode VESD [1][2] MIL-STD-883 (human body model) [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1, 3, 4 or 6 to pin 2 or 5. Table 7. ESD standards compliance Standard Conditions Per diode IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 4 kV 001aaa631 001aaa630 120 IPP 100 % 90 % 100 % IPP; 8 µs IPP (%) 80 e−t 50 % IPP; 20 µs 40 10 % t tr = 0.7 ns to 1 ns 0 0 10 20 30 30 ns 40 t (µs) Fig 1. 8/20 µs pulse waveform according to IEC 61000-4-5 60 ns Fig 2. ESD pulse waveform according to IEC 61000-4-2 PESD3V3S4UF_PESD5V0S4UF_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 17 January 2008 3 of 13 PESD3V3S4UF; PESD5V0S4UF NXP Semiconductors Unidirectional quadruple ESD protection diode arrays 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit PESD3V3S4UF - - 3.3 V PESD5V0S4UF - - 5.0 V Per diode VRWM IR VBR reverse standoff voltage reverse current PESD3V3S4UF VR = 3.0 V - 100 1000 nA PESD5V0S4UF VR = 4.3 V - 4 100 nA 5.32 5.6 5.88 V 6.46 6.8 7.14 V - 110 300 pF - 85 220 pF IPP = 1 A - - 8 V IPP = 10 A - - 11 V PESD5V0S4UF IPP = 1 A - - 8 V IPP = 10 A - - 12 V differential resistance IR = 1 mA PESD3V3S4UF - - 400 Ω PESD5V0S4UF - - 200 Ω breakdown voltage IR = 1 mA PESD3V3S4UF PESD5V0S4UF Cd diode capacitance f = 1 MHz; VR = 0 V PESD3V3S4UF PESD5V0S4UF VCL clamping voltage PESD3V3S4UF rdif [1][2] [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1, 3, 4 or 6 to pin 2 or 5. PESD3V3S4UF_PESD5V0S4UF_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 17 January 2008 4 of 13 PESD3V3S4UF; PESD5V0S4UF NXP Semiconductors Unidirectional quadruple ESD protection diode arrays 006aab146 104 PPP (W) 001aaa633 1.2 PPP PPP(25°C) 103 0.8 102 0.4 10 1 1 102 10 103 104 0 0 50 100 150 tp (µs) 200 Tj (°C) Tamb = 25 °C Fig 3. Peak pulse power as a function of exponential pulse duration; typical values 006aab147 120 Cd (pF) Fig 4. Relative variation of peak pulse power as a function of junction temperature; typical values 006aab148 10 IR IR(25°C) 80 (1) 1 (2) 40 0 0 2 4 6 8 10−1 −75 −25 25 75 125 175 Tj (°C) VR (V) f = 1 MHz; Tamb = 25 °C (1) PESD3V3S4UF (2) PESD5V0S4UF Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Relative variation of reverse current as a function of junction temperature; typical values PESD3V3S4UF_PESD5V0S4UF_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 17 January 2008 5 of 13 NXP Semiconductors PESD3V3S4UF; PESD5V0S4UF Unidirectional quadruple ESD protection diode arrays I −VCL −VBR −VRWM V −IRM −IR − + P-N −IPP 006aaa407 Fig 7. V-I characteristics for a unidirectional ESD protection diode PESD3V3S4UF_PESD5V0S4UF_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 17 January 2008 6 of 13 PESD3V3S4UF; PESD5V0S4UF NXP Semiconductors Unidirectional quadruple ESD protection diode arrays ESD TESTER RZ 450 Ω RG 223/U 50 Ω coax DIGITIZING OSCILLOSCOPE 10× ATTENUATOR (1) 50 Ω CZ IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω DUT Device Under Test (1): attenuator is only used for open socket high voltage measurements vertical scale = 100 V/div horizontal scale = 50 ns/div vertical scale = 5 V/div horizontal scale = 50 ns/div PESD5V0S4UF PESD3V3S4UF GND unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) GND GND vertical scale = 100 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) vertical scale = 5 V/div horizontal scale = 50 ns/div clamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) 006aab149 Fig 8. ESD clamping test setup and waveforms PESD3V3S4UF_PESD5V0S4UF_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 17 January 2008 7 of 13 NXP Semiconductors PESD3V3S4UF; PESD5V0S4UF Unidirectional quadruple ESD protection diode arrays 7. Application information The PESDxS4UF is designed for the protection of up to four unidirectional data or signal lines from the damage caused by ESD and surge pulses. The PESDxS4UF may be used on lines where the signal polarities are either positive or negative with respect to ground. The PESDxS4UF provides a surge capability of 110 W per line for an 8/20 µs waveform each. data- or transmission lines DUT DUT 1 6 2 5 3 4 unidirectional protection of 4 lines n.c. 1 6 2 5 3 4 n.c. bidirectional protection of 3 lines 006aab128 Fig 9. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the PESDxS4UF as close to the input terminal or connector as possible. 2. The path length between the device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. PESD3V3S4UF_PESD5V0S4UF_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 17 January 2008 8 of 13 PESD3V3S4UF; PESD5V0S4UF NXP Semiconductors Unidirectional quadruple ESD protection diode arrays 8. Package outline 0.50 max 1.05 0.95 0.04 max 0.6 3 4 2 5 1 6 0.40 0.32 0.35 0.27 0.25 0.17 0.5 1.5 1.4 0.5 Dimensions in mm 04-07-22 Fig 10. Package outline PESDxS4UF (SOT886) 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 5000 PESD3V3S4UF SOT886 PESD5V0S4UF SOT886 4 mm pitch, 8 mm tape and reel; T1 [2] -115 4 mm pitch, 8 mm tape and reel; T4 [3] -132 4 mm pitch, 8 mm tape and reel; T1 [2] -115 4 mm pitch, 8 mm tape and reel; T4 [3] -132 [1] For further information and the availability of packing methods, see Section 13. [2] T1: normal taping [3] T4: 90° rotated reverse taping PESD3V3S4UF_PESD5V0S4UF_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 17 January 2008 9 of 13 PESD3V3S4UF; PESD5V0S4UF NXP Semiconductors Unidirectional quadruple ESD protection diode arrays 10. Soldering 1.250 0.675 0.370 (6×) 0.500 1.700 solder lands 0.500 solder paste 0.270 (6×) occupied area Dimensions in mm 0.325 (6×) 0.425 (6×) sot886_fr Reflow soldering is the only recommended soldering method. Fig 11. Reflow soldering footprint PESDxS4UF (SOT886) PESD3V3S4UF_PESD5V0S4UF_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 17 January 2008 10 of 13 PESD3V3S4UF; PESD5V0S4UF NXP Semiconductors Unidirectional quadruple ESD protection diode arrays 11. Revision history Table 10. Revision history Document ID Release date PESD3V3S4UF_PESD5V0S4UF_1 20080117 Data sheet status Change notice Supersedes Product data sheet - - PESD3V3S4UF_PESD5V0S4UF_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 17 January 2008 11 of 13 NXP Semiconductors PESD3V3S4UF; PESD5V0S4UF Unidirectional quadruple ESD protection diode arrays 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] PESD3V3S4UF_PESD5V0S4UF_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 17 January 2008 12 of 13 NXP Semiconductors PESD3V3S4UF; PESD5V0S4UF Unidirectional quadruple ESD protection diode arrays 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 17 January 2008 Document identifier: PESD3V3S4UF_PESD5V0S4UF_1