PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 Rev. 02 — 25 August 2009 Product data sheet 1. Product profile 1.1 General description Low capacitance double bidirectional ElectroStatic Discharge (ESD) protection diodes in a SOT23 small Surface Mounted Device (SMD) plastic package designed to protect two signal lines from the damage caused by ESD and other transients. 1.2 Features n n n n ESD protection of two lines Max. peak pulse power: PPP = 350 W Low clamping voltage: VCL = 26 V Small SMD plastic package n n n n Ultra low leakage current: IRM < 90 nA ESD protection up to 23 kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); IPP = 15 A 1.3 Applications n Computers and peripherals n Audio and video equipment n Cellular handsets and accessories n Communication systems n Portable electronics n Subscriber Identity Module (SIM) card protection 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VRWM reverse standoff voltage Cd Min Typ Max Unit PESD3V3L2BT - - 3.3 V PESD5V0L2BT - - 5.0 V PESD12VL2BT - - 12 V PESD15VL2BT - - 15 V PESD24VL2BT - - 24 V PESD3V3L2BT - 101 - pF PESD5V0L2BT - 75 - pF PESD12VL2BT - 19 - pF PESD15VL2BT - 16 - pF PESD24VL2BT - 11 - pF diode capacitance Conditions VR = 0 V; f = 1 MHz PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 2. Pinning information Table 2. Pinning Pin Description 1 cathode 1 2 cathode 2 3 double cathode Simplified outline Symbol 3 1 3 1 2 2 006aaa155 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD3V3L2BT - plastic surface mounted package; 3 leads SOT23 PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT 4. Marking Table 4. Marking codes Type number Marking code[1] PESD3V3L2BT V3* PESD5V0L2BT V4* PESD12VL2BT V5* PESD15VL2BT V6* PESD24VL2BT V7* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PESDXL2BT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 25 August 2009 2 of 14 PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Min Max Unit PESD3V3L2BT - 350 W PESD5V0L2BT - 350 W PESD12VL2BT - 200 W PESD15VL2BT - 200 W - 200 W PESD3V3L2BT - 15 A PESD5V0L2BT - 13 A PESD12VL2BT - 5 A PESD15VL2BT - 5 A PESD24VL2BT - 3 A Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C PPP Parameter Conditions peak pulse power tp = 8/20 µs [1][2] PESD24VL2BT peak pulse current IPP tp = 8/20 µs [1][2] [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1 to 3 or 2 to 3. Table 6. Symbol VESD ESD maximum ratings Parameter electrostatic discharge voltage Conditions IEC 61000-4-2 (contact discharge) Min Max Unit - 30 kV - 23 kV - 10 kV [1][2] PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT PESDxL2BT series HBM MIL-STD883 [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1 to 3 or 2 to 3. Table 7. ESD standards compliance ESD Standard Conditions IEC 61000-4-2, level 4 (ESD) > 15 kV (air); > 8 kV (contact) HBM MIL-STD883, class 3 > 4 kV PESDXL2BT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 25 August 2009 3 of 14 PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 µs IPP (%) 80 e−t 50 % IPP; 20 µs 40 10 % 0 10 20 30 30 ns 40 t (µs) Fig 1. t tr = 0.7 ns to 1 ns 0 60 ns 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 PESDXL2BT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 25 August 2009 4 of 14 PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter VRWM reverse standoff voltage IRM VBR Conditions Min Typ Max Unit PESD3V3L2BT - - 3.3 V PESD5V0L2BT - - 5.0 V PESD12VL2BT - - 12 V PESD15VL2BT - - 15 V PESD24VL2BT - - 24 V reverse leakage current PESD3V3L2BT VRWM = 3.3 V - 0.09 2 µA PESD5V0L2BT VRWM = 5.0 V - 0.01 1 µA PESD12VL2BT VRWM = 12 V - <1 50 nA PESD15VL2BT VRWM = 15 V - <1 50 nA PESD24VL2BT VRWM = 24 V - <1 50 nA PESD3V3L2BT 5.8 6.4 6.9 V PESD5V0L2BT 7.0 7.6 8.2 V PESD12VL2BT 14.2 15.8 16.7 V PESD15VL2BT 17.1 18.8 20.3 V 25.4 27.8 30.3 V PESD3V3L2BT - 101 - pF PESD5V0L2BT - 75 - pF PESD12VL2BT - 19 - pF PESD15VL2BT - 16 - pF - 11 - pF IPP = 1 A - - 8 V IPP = 15 A - - 26 V IPP = 1 A - - 10 V breakdown voltage IR = 5 mA PESD24VL2BT Cd diode capacitance VR = 0 V; f = 1 MHz PESD24VL2BT VCL [1][2] clamping voltage PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT IPP = 13 A - - 28 V IPP = 1 A - - 20 V IPP = 5 A - - 37 V IPP = 1 A - - 25 V IPP = 5 A - - 44 V IPP = 1 A - - 40 V IPP = 3 A - - 70 V PESDXL2BT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 25 August 2009 5 of 14 PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 Table 8. Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit rdif differential resistance IR = 1 mA PESD3V3L2BT - - 400 Ω PESD5V0L2BT - - 80 Ω PESD12VL2BT - - 200 Ω PESD15VL2BT - - 225 Ω PESD24VL2BT - - 300 Ω [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1 to 3 or 2 to 3. PESDXL2BT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 25 August 2009 6 of 14 PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 006aaa531 104 001aaa193 1.2 PPP PPP (W) PPP(25°C) 103 0.8 (1) (2) 102 0.4 10 1 102 10 103 0 104 0 50 100 150 tp (µs) 200 Tj (°C) Tamb = 25 °C (1) PESD3V3L2BT and PESD5V0L2BT (2) PESD12VL2BT, PESD15VL2BT, PESD24VL2BT Fig 3. Peak pulse power as a function of exponential pulse duration tp; typical values Fig 4. 006aaa067 110 Cd (pF) 100 Relative variation of peak pulse power as a function of junction temperature; typical values 006aaa068 20 Cd (pF) 16 90 (1) 12 (1) 80 (2) 8 70 (3) (2) 60 4 0 50 0 1 2 3 4 5 0 5 10 15 20 25 VR (V) VR (V) Tamb = 25 °C; f = 1 MHz Tamb = 25 °C; f = 1 MHz (1) PESD3V3L2BT (1) PESD12VL2BT (2) PESD5V0L2BT (2) PESD15VL2BT (3) PESD24VL2BT Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Diode capacitance as a function of reverse voltage; typical values PESDXL2BT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 25 August 2009 7 of 14 PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 006aaa069 10 IPP (1) IRM IRM(25°C) −VCL −VBR −VRWM 1 IR IRM −IRM −IR VRWM VBR VCL − 10−1 −100 −50 0 50 100 + −IPP 150 Tj (°C) 006aaa676 (1) PESD3V3L2BT, PESD5V0L2BT PESD12VL2BT, PESD15VL2BT and PESD24VL2BT: IRM < 20 nA; Tj = 150 °C Fig 7. Relative variation of reverse leakage current as a function of junction temperature; typical values Fig 8. V-I characteristics for a bidirectional ESD protection diode PESDXL2BT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 25 August 2009 8 of 14 PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 ESD TESTER RZ 450 Ω 4 GHz DIGITAL OSCILLOSCOPE RG 223/U 50 Ω coax 10× ATTENUATOR 50 Ω CZ IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω D.U.T. (Device Under Test) vertical scale = 20 V/div; horizontal scale = 50 ns/div vertical scale = 200 V/div horizontal scale = 50 ns/div PESD24VL2BT GND PESD15VL2BT GND PESD12VL2BT GND PESD5V0L2BT GND GND PESD3V3L2BT GND unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) vertical scale = 20 V/div; horizontal scale = 50 ns/div GND GND PESD3V3L2BT GND PESD5V0L2BT GND PESD12VL2BT GND PESD15VL2BT GND PESD24VL2BT vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) Fig 9. clamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) 006aaa162 ESD clamping test setup and waveforms PESDXL2BT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 25 August 2009 9 of 14 PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 7. Application information The PESDxL2BT series is designed for the protection of two bidirectional signal lines from the damage caused by ESD and surge pulses. The PESDxL2BT series may be used on lines where the signal polarities are above and below ground. The PESDxL2BT series provides a surge capability of up to 350 W per line for an 8/20 µs waveform. line 1 to be protected line 2 to be protected PESDxL2BT GND 006aaa163 Fig 10. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the PESDxL2BT as close to the input terminal or connector as possible. 2. The path length between the PESDxL2BT and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. PESDXL2BT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 25 August 2009 10 of 14 PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 8. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 04-11-04 Fig 11. Package outline SOT23 (TO-236AB) 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PESD3V3L2BT Package SOT23 Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 10000 -215 -235 PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT [1] For further information and the availability of packing methods, see Section 12. PESDXL2BT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 25 August 2009 11 of 14 PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PESDXL2BT_SER_2 20090825 Product data sheet - PESDXL2BT_SER_1 Modifications: PESDXL2BT_SER_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Table 2 “Pinning”: amended 20051101 Product data sheet PESDXL2BT_SER_2 Product data sheet - - © NXP B.V. 2009. All rights reserved. Rev. 02 — 25 August 2009 12 of 14 PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PESDXL2BT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 25 August 2009 13 of 14 PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Application information. . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information. . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 25 August 2009 Document identifier: PESDXL2BT_SER_2