PHILIPS PESD2CAN

PESD2CAN
CAN bus ESD protection diode
Rev. 01 — 22 December 2006
Product data sheet
1. Product profile
1.1 General description
PESD2CAN in a small SOT23 Surface-Mounted Device (SMD) plastic package designed
to protect two automotive Controller Area Network (CAN) bus lines from the damage
caused by ElectroStatic Discharge (ESD) and other transients.
1.2 Features
n Due to the integrated diode structure only one small SOT23 package is needed to
protect two CAN bus lines
n Max. peak pulse power: PPP = 230 W at tp = 8/20 µs
n Low clamping voltage: VCL = 41 V at IPP = 5 A
n Ultra low leakage current: IRM < 1 nA
n ESD protection up to 30 kV
n IEC 61000-4-2, level 4 (ESD)
n IEC 61000-4-5 (surge); IPP = 5 A at tp = 8/20 µs
n Small SMD plastic package
1.3 Applications
n CAN bus protection
n Automotive applications
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
-
24
V
-
25
30
pF
Per diode
VRWM
reverse standoff voltage
Cd
diode capacitance
f = 1 MHz; VR = 0 V
PESD2CAN
NXP Semiconductors
CAN bus ESD protection diode
2. Pinning information
Table 2.
Pinning
Pin
Description
1
cathode 1
2
cathode 2
3
common cathode
Simplified outline
Symbol
3
1
1
2
3
2
006aaa155
3. Ordering information
Table 3.
Ordering information
Type number
PESD2CAN
Package
Name
Description
Version
-
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PESD2CAN
6R*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
peak pulse power
tp = 8/20 µs
peak pulse current
tp = 8/20 µs
Min
Max
Unit
[1][2]
-
230
W
[1][2]
-
5
A
Per diode
PPP
IPP
Per device
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2]
Measured from pin 1 to 3 or 2 to 3.
PESD2CAN_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 22 December 2006
2 of 11
PESD2CAN
NXP Semiconductors
CAN bus ESD protection diode
Table 6.
ESD maximum ratings
Symbol
Parameter
Conditions
electrostatic discharge voltage
IEC 61000-4-2
(contact discharge)
Min
Max
Unit
[1][2]
-
30
kV
[2]
-
400
V
[1][2]
-
16
kV
Per diode
VESD
machine model
MIL-STD-883 (human
body model)
[1]
Device stressed with ten non-repetitive ESD pulses.
[2]
Measured from pin 1 to 3 or 2 to 3.
Table 7.
ESD standards compliance
Standard
Conditions
Per diode
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model)
> 4 kV
001aaa631
001aaa630
120
IPP
100 %
90 %
100 % IPP; 8 µs
IPP
(%)
80
e−t
50 % IPP; 20 µs
40
10 %
t
tr = 0.7 ns to 1 ns
0
0
10
20
30
30 ns
40
t (µs)
60 ns
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
PESD2CAN_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 22 December 2006
3 of 11
PESD2CAN
NXP Semiconductors
CAN bus ESD protection diode
6. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Per diode
VRWM
reverse standoff voltage
-
-
24
V
IRM
reverse leakage current
VRWM = 24 V
-
<1
10
nA
VBR
breakdown voltage
IR = 1 mA
26.2
28
30.3
V
Cd
diode capacitance
f = 1 MHz; VR = 0 V
clamping voltage
VCL
differential resistance
rdif
-
25
30
pF
IPP = 1 A
[1][2]
-
-
34
V
IPP = 5 A
[1][2]
-
-
41
V
-
-
300
Ω
IR = 1 mA
[1]
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2]
Measured from pin 1 to 3 or 2 to 3.
006aaa937
8.0
IPP
(A)
001aaa193
1.2
PPP
PPP(25°C)
6.0
0.8
4.0
0.4
2.0
0
0
25
30
35
40
45
0
50
100
150
200
Tj (°C)
VCL (V)
Tamb = 25 °C
Fig 3. Peak pulse current as a function of clamping
voltage; typical values
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical values
PESD2CAN_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 22 December 2006
4 of 11
PESD2CAN
NXP Semiconductors
CAN bus ESD protection diode
006aaa938
30
Cd
(pF)
006aaa939
50
IR
(mA)
26
(1)
(2)
(3)
40
(1)
22
30
(2)
(3)
18
20
(4)
(5)
14
10
10
0
0
8
16
24
24
26
28
30
32
VR (V)
34
VR (V)
f = 1 MHz
(1) Tamb = −55 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(2) Tamb = 125 °C
(3) Tamb = 150 °C
(3) Tamb = 85 °C
(4) Tamb = 25 °C
(5) Tamb = −40 °C
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
Fig 6. Reverse current as a function of reverse
voltage; typical values
006aaa940
25
IPP
VR
(V)
20
15
−VCL −VBR −VRWM
IR
IRM
−IRM
−IR
10
5
VRWM VBR VCL
−
0
0
10
20
+
−IPP
30
IRM (nA)
006aaa676
Tamb = 150 °C
IR is less than 1 nA at −55 °C and 25 °C.
Fig 7. Reverse voltage as a function of reverse
leakage current; typical values
Fig 8. V-I characteristics for a bidirectional ESD
protection diode
PESD2CAN_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 22 December 2006
5 of 11
PESD2CAN
NXP Semiconductors
CAN bus ESD protection diode
ESD TESTER
RZ
450 Ω
RG 223/U
50 Ω coax
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
50 Ω
CZ
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
D.U.T.
(Device
Under
Test)
vertical scale = 10 A/div
horizontal scale = 15 ns/div
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
vertical scale = 25 V/div
horizontal scale = 100 ns/div
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network), Pin 1 to 3
vertical scale = 10 A/div
horizontal scale = 15 ns/div
vertical scale = 25 V/div
horizontal scale = 100 ns/div
unclamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped −8 kV ESD voltage waveform
(IEC 61000-4-2 network), Pin 1 to 3
006aaa941
Fig 9. ESD clamping test setup and waveforms
PESD2CAN_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 22 December 2006
6 of 11
PESD2CAN
NXP Semiconductors
CAN bus ESD protection diode
7. Application information
The PESD2CAN is designed for the protection of two automotive CAN bus lines from the
damage caused by ESD and surge pulses. The PESD2CAN can be used for both,
high-speed CAN bus and fault-tolerant CAN bus protection. The PESD2CAN provides a
surge capability of up to 230 W per line for an 8/20 µs waveform.
SPLIT
CANH
RT/2
CAN BUS
TRANSCEIVER
CAN
bus
RT/2
CANL
Common
mode choke
(optional)
2
1
CG
PESD2CAN
3
006aaa942
Fig 10. Typical application: ESD protection of two automotive CAN bus lines
Circuit board layout and protection device placement:
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the PESD2CAN as close to the input terminal or connector as possible.
2. The path length between the PESD2CAN and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protection conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
PESD2CAN_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 22 December 2006
7 of 11
PESD2CAN
NXP Semiconductors
CAN bus ESD protection diode
8. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
1.9
0.48
0.38
Dimensions in mm
0.15
0.09
04-11-04
Fig 11. Package outline SOT23 (TO-236AB)
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
PESD2CAN
[1]
Package
SOT23
Description
4 mm pitch, 8 mm tape and reel
3000
10000
-215
-235
For further information and the availability of packing methods, see Section 12.
PESD2CAN_1
Product data sheet
Packing quantity
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 22 December 2006
8 of 11
PESD2CAN
NXP Semiconductors
CAN bus ESD protection diode
10. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PESD2CAN_1
20061222
Product data sheet
-
-
PESD2CAN_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 22 December 2006
9 of 11
PESD2CAN
NXP Semiconductors
CAN bus ESD protection diode
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
PESD2CAN_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 22 December 2006
10 of 11
PESD2CAN
NXP Semiconductors
CAN bus ESD protection diode
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information. . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2006.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 22 December 2006
Document identifier: PESD2CAN_1