TPC6601 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6601 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 (IC = −0.3 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max) • High-speed switching: tf = 90 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −7 V DC IC −2.0 Pulse ICP −3.5 IB −0.2 PC 0.8 (Note 1) 1.6 Tj 150 °C JEDEC ― Tstg −55 to 150 °C JEITA ― Collector current Base current Collector power dissipation DC t = 10 s Junction temperature Storage temperature range Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) A A W TOSHIBA 2-3T1A Weight: 0.011 g (typ.) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 TPC6601 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −50 V, IE = 0 ⎯ ⎯ −100 nA Emitter cut-off current IEBO VEB = −7 V, IC = 0 ⎯ ⎯ −100 nA V (BR) CEO IC = −10 mA, IB = 0 −50 ⎯ ⎯ V hFE (1) VCE = −2 V, IC = −0.3 A 200 ⎯ 500 hFE (2) VCE = −2 V, IC = −1.0 A 100 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = −1.0 A, IB = −33 mA ⎯ ⎯ −0.2 V Base-emitter saturation voltage VBE (sat) IC = −1.0 A, IB = −33 mA ⎯ ⎯ −1.1 V See Figure 1 circuit diagram. ⎯ 60 ⎯ VCC ∼ − −30 V, RL = 30 Ω ⎯ 250 ⎯ IB1 = −IB2 = −33 mA ⎯ 90 ⎯ Collector-emitter breakdown voltage DC current gain Switching time Rise time tr Storage time tstg Fall time tf ns VCC IB2 Input RL 20 μs IB1 Output IB1 IB2 Duty cycle < 1% Figure 1 Circuit Configuration 6 5 Switching Time Test Circuit & Timing Chart Marking 4 Lot code (month) Part No. (or abbreviation code) 1 2 Pin #1 3 2 Lot No. H3A Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2006-11-10 TPC6601 IC – VCE −100 −80 hFE – IC 10000 −40 −60 −30 −2.4 −20 −1.8 DC current gain hFE Collector current IC (A) −3.0 −10 −6 −1.2 −4 IB = −2 mA −0.6 −0.4 −0.8 Ta = 100°C 1000 25 −55 100 Common emitter Ta = 25°C Single nonrepetitive 0 0 0 Common emitter VCE = −2 V Single nonrepetitive pulse −1.2 −1.6 −2.0 10 −0.001 −2.4 Collector-emitter voltage VCE (V) −0.01 Collector current IC VCE (sat) – IC Common emitter IC/IB = 30 Single nonrepetitive pulse Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) −10 25 Ta = 100°C −55 −0.01 −0.001 −0.001 −0.01 −0.1 −1 Collector current IC −1 −10 (A) VBE (sat) – IC −1 −0.1 −0.1 Common emitter IC/IB = 30 Single nonrepetitive pulse 25 Ta = 100°C −0.1 −0.001 −10 (A) −55 −1 −0.01 −0.1 Collector current IC −1 −10 (A) IC – VBE Collector current IC (A) −3.0 −2.4 Common emitter VCE = −2 V Single nonrepetitive pulse −1.8 −1.2 Ta = 100°C 25 −55 −0.6 0 0 −0.2 −0.4 −0.6 Base-emitter voltage −0.8 −1.0 −1.2 VBE (V) 3 2006-11-10 TPC6601 Transient Thermal Resistance rth – tw Transient thermal resistance rth (j-a) (°C/W) 1000 100 10 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) 1 0.001 0.01 0.1 1 Pulse width 10 100 1000 tw (s) Safe Operating Area −10 IC max (pulsed) ♦ 10 ms♦ 1 ms♦ 100 μs♦ 10 μs♦ −1 10 s♦ DC operation (Ta = 25°C) ♦: Single nonrepetitive pulse Ta = 25°C −0.1 Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2). These characteristic curves must be derated linearly with increase in temperature. −0.01 −0.1 −1 VCEO max Collector current IC (A) IC max (continuous) 100 ms♦ −10 −100 Collector-emitter voltage VCE (V) 4 2006-11-10 TPC6601 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-10