TPCP8603 TOSHIBA Transistor Silicon PNP Epitaxial Type TPCP8603 High-Speed Switching Applications Unit: mm DC/DC Converters 0.33±0.05 0.05 M A 5 2.4±0.1 8 • High DC current gain: hFE = 120～300 (IC = −0.1 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max) • High-speed switching: tf = 120 ns (typ.) 0.475 1 4 B 0.65 2.9±0.1 0.8±0.05 S 0.025 S 0.28 +0.1 -0.11 0.17±0.02 Symbol Rating Unit Collector-vase voltage VCBO −120 V Collector-emitter voltage VCEO −120 V Collector-emitter voltage VEBO −7 V (Note 1) IC −1.0 A Pulsed (Note 1) ICP −2.0 A 1. IB 0.1 A 2. 3.00 W 1.25 W Tj 150 °C JEDEC ⎯ Tstg −55~150 °C JEITA ⎯ Collector current DC Base current Collector power dissipation t = 10 s Junction temperature Storage temperature range DC PC (Note 2) 0.05 M B A Absolute Maximum Ratings (Ta = 25°C) Characteristic 2.8±0.1 Strobe Applications Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. +0.13 1.12 -0.12 1.12 +0.13 -0.12 0.28 +0.1 -0.11 Collector Collector 3. Collector 4. Base TOSHIBA Emitter Collector 7. Collector 8. Collector 5. 6. 2-3V1A Weight: 0.017 g (typ.) Note 2: Mounted on the FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-13 TPCP8603 Figure 1. Circuit Configuration 8 7 6 Figure 2. 5 8 7 Marking (Note4) 6 5 8603 Type * 1 Note 4: 2 3 4 1 2 3 Lot No. 4 on the lower left of the marking indicates Pin 1. * Weekly code (three digits): Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (the last digit of the calendar year) Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cutoff current ICBO VCB = −120 V, IE = 0 ⎯ ⎯ −100 nA Emitter cutoff current IEBO VEB = −7 V, IC = 0 ⎯ ⎯ −100 nA V (BR) CEO IC = −10 mA, IB = 0 −120 ⎯ ⎯ V hFE(1) VCE = −2 V, IC = −0.1 A 120 ⎯ 300 hFE(2) VCE = −2 V, IC = −0.3 A 60 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = −0.3 A, IB = −0.01 A ⎯ ⎯ −0.2 V Base-emitter saturation voltage VBE (sat) IC = −0.3 A, IB = −0.01 A ⎯ ⎯ −1.1 V See Figure 3 circuit diagram. ⎯ 130 ⎯ VCC ≅ 72 V, RL = 240 Ω ⎯ 650 ⎯ −IB1 = IB2 = −10 mA ⎯ 120 ⎯ Collector-emitter breakdown voltage DC current gain Switching time Storage time tr Storage time tstg Fall time tf ns Figure 3. Switching Time Test Circuit & Timing Chart RL VCC IB1 IB2 IB1 OUT IN IB2 20 μs Duty cycle < 1 % 2 2006-11-13 TPCP8603 IC – VCE −1.0 hFE – IC 1000 −8 −10 −6 hFE IC (A) 100 −5 −0.8 −4 DC current gain Collector current −0.6 −3 −0.4 −2 IB = −1 mA −0.2 0 −2 −4 −6 −8 Collector-emitter voltage −10 VCE Ta = −55°C 10 Common emitter VCE = −2 V Single nonrepetitive pulse Common emitter Ta = 25°C Single nonrepetitive pulse 0 25 100 1 0.001 −12 (V) 0.01 Collector current VCE (sat) – IC 1 10 −IC (A) VBE (sat) – IC 10 10 Common emitter Base-emitter saturation voltage −VBE (sat) (V) Collector-emitter saturation voltage −VCE (sat) (V) 0. 1 β = 30 Single nonrepetitive pulse 1 0.1 100 Ta = −55°C 25 0.1 0.001 0.01 0.1 Collector current Common emitter β = 30 Single nonrepetitive pulse Ta = −55°C 1 0.1 0.001 1 −IC (A) 100 25 0.01 Collector current 0.1 1 −IC (A) IC– VBE −1.0 Common emitter VCE = −2 V Collector current IC (A) −0.8 Single nonrepetitive pulse −0.6 100 −0.4 −0.2 25 Ta = −55°C 0 0 −0.2 −0.4 −0.6 Base-emitter voltage −0.8 −1.0 −1.2 VBE (V) 3 2006-11-13 TPCP8603 rth – tw 1000 Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse Ta = 25°C Transient thermal resistance rth (°C/W) Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) 100 10 1 0.001 0.01 0.1 1 Pulse width 10 100 1000 tw (S) Safe Operating Area 10 1 Collector current −IC (A) IC max (pulsed)* 10 ms* 1ms* 100 μs* 10 μs* IC max (continuous) DC operation Ta = 25°C 0.1 *:Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms*,10 s* 10 s* and DC operation will be different 0.01 when the devices aren’t mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2). These 100 ms* characteristic curves must be derated. VCEO max linearly with increase in temperature. 0.001 0.1 1 10 Collector-emitter voltage 100 −VCE 1000 (V) 4 2006-11-13 TPCP8603 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-13