TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) TPCP8505 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 120 ns (typ.) 0.475 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Collector-base voltage Collector current Rating VCEX 80 VCEO 50 VEBO 7 (Note 1) IC 3.0 Pulse (Note 1) ICP 5.0 IB 0.3 DC Base current Collector power dissipation (t = 10 s) Junction temperature Storage temperature range t = 10s DC PC (Note 2) B 0.05 M B 2.9±0.1 100 Emitter-base voltage 4 0.65 VCBO Collector-emitter voltage 1 3.0 1.25 A 0.8±0.05 Unit S V S 0.025 0.28 +0.1 -0.11 0.17±0.02 +0.13 1.12 -0.12 V 1.12 +0.13 -0.12 V 1.Collector 2.Collector 3.Collector 4.Base A A W Tj 150 °C Tstg −55 to 150 °C 2.8±0.1 • 2.4±0.1 8 0.28 +0.1 -0.11 5.Emitter 6.Collector 7.Collector 8.Collector JEDEC ― JEITA ― TOSHIBA 2-3V1A Weight: 0.017 g (typ.) Note 1: Ensure that the junction temperature does not exceed 150°C during use of this device. Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-13 TPCP8505 Figure 1. Circuit Configuration (top view) Figure 2. Marking (Note 4) 8 7 6 5 8 7 6 5 8505 Type * 1 2 3 4 1 2 3 4 Lot No. (weekly code) Note 4: ● on the lower left of the marking indicates Pin 1. * Weekly code (three digits): Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (lowest-order digit of the calendar year) Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 ⎯ ⎯ 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ⎯ ⎯ 100 nA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IB = 0 100 ⎯ ⎯ V Collector-emitter breakdown voltage V (BR) CEO V IC = 10 mA, IB = 0 50 ⎯ ⎯ hFE (1) VCE = 2 V, IC = 0.3 A 400 ⎯ 1000 hFE (2) VCE = 2 V, IC = 1.0 A 200 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 20 mA ⎯ ⎯ 0.14 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 20 mA ⎯ ⎯ 1.1 V ⎯ 40 ⎯ ⎯ 500 ⎯ ⎯ 120 ⎯ DC current gain Rise time Switching time tr Storage time tstg Fall time tf See Figure 3 circuit diagram VCC ∼ − 30 V, RL = 30 Ω IB1 = −IB2 = 33 mA ns Figure 3. Switching Time Test Circuit & Timing Chart VCC 20 μs RL IB1 IB2 Input Output IB1 Duty cycle ＜1% IB2 2 2006-11-13 TPCP8505 IC – VCE 3.0 40 hFE – IC 10000 30 hFE 15 10 2.0 DC current gain Collector current IC (A) 20 2.5 5 1.5 1.0 2 0.5 IB = 1 mA 0 0 0.4 0.8 1.6 Collector−emitter voltage 2.0 VCE Ta = 100°C 25 −55 100 Common emitter VCE = 2 V Single nonrepetitive pulse Common emitter Ta = 25°C Single nonrepetitive pulse 1.2 1000 10 0.001 2.4 (V) 0.01 Collector current VCE (sat) – IC 0.1 Ta = 100°C −55 25 0.01 0.001 0.01 0.1 IC 1 IC 10 (A) (A) Common emitter β = 50 Single nonrepetitive pulse Ta = −55°C 100 0.1 0.001 10 1 Collector current 1 VBE (sat) – IC 10 Common emitter β = 50 Single nonrepetitive pulse Base−emitter saturation voltage VBE (sat) (V) Collector−emitter saturation voltage VCE (sat) (V) 1 0.1 0.01 25 0.1 Collector current 1 IC 10 (A) IC – VBE Collector current IC (A) 3.0 2.5 Common emitter VCE = 2 V Single nonrepetitive pulse 2.0 1.5 1.0 0.5 Ta = 100°C 0 0 0.4 −55 25 0.8 Base−emitter voltage 1.2 VBE 1.6 (V) 3 2006-11-13 TPCP8505 rth – tw Transient thermal impedance rth(j-a) (°C/W) 1000 100 10 Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse Ta = 25°C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) 1 0.001 0.01 0.1 1 10 Pulse width tw 100 1000 (s) Safe operating area 10 IC max (Pulse)* 10 ms* 1 ms* 100 μs* 10 μs* Collector current IC (A) 10 s* 100 ms* IC max 1 (Continuous)* DC operation Ta = 25°C *: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms, 0.1 10 s and DC operation will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2). These characteristic curves must be derated linearly with increase in temperature. 0.01 0.1 1 Collector−emitter voltage VCEO max 10 100 VCE (V) 4 2006-11-13 TPCP8505 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-13