PJP75N06 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=13mΩ • RDS(ON), [email protected],IDS@30A=18mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA • Case: TO-220 Molded Plastic • Terminals : Solderable per MIL-STD-750D,Method 1036.3 • Marking : P75N06 Drain PIN Assignment 1. Gate 2. Drain 3. Source Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R S ym b o l Li mi t U ni t s D r a i n- S o ur c e Vo l t a g e V DS 60 V G a t e - S o ur c e Vo l t a g e V GS +20 V ID 75 A ID M 350 A PD 105 6 2 .5 W T J , T S TG -5 5 to + 1 5 0 Avalanche Energy with Single Pulse ID=40A, VDD=25V, L=0.5mH E AS 400 Junction-to-Case Thermal Resistance RθJC 1 .2 O C /W Junction-to Ambient Thermal Resistance(PCB mounted)2 RθJA 62 O C /W C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e T A = 2 5 OC T A = 7 5 OC O C mJ Note: 1. Maximum DC current limited by the package PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUN.19.2006 PAGE . 1 PJP75N06 ELECTRICALCHARACTERISTICS P a ra me te r S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s D r a i n- S o ur c e B r e a k d o w n Vo l t a g e B V DSS V G S = 0 V , ID = 2 5 0 u A 60 - - V G a t e Thr e s ho l d Vo l t a g e V G S ( t h) V D S = V G S , ID = 2 5 0 u A 1 - 3 V D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e R D S ( o n) VGS=4.5V, ID=30A - 1 3 .5 1 8 .0 D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e R D S ( o n) VGS=10V, ID=30A - 10.5 13.0 Ze r o G a t e Vo l t a g e D r a i n C ur r e nt ID S S VDS=60V, VGS=0V - - 1 uA Gate Body Leakage IG S S V GS = + 2 0 V , V D S = 0 V - - +100 nA Forward Transconductance g fS V D S = 1 0 V , ID = 1 5 A 40 - - S V D S = 3 0 V , ID = 3 0 A , V G S = 5 V - 42 - - 82 - - 10 - S ta ti c mΩ D ynami c To t a l G a t e C h a r g e Qg nC V D S = 3 0 V , ID = 3 0 A V GS = 1 0 V G a t e - S o ur c e C ha r g e Qgs G a t e - D r a i n C ha r g e Qgd - 13.5 - Tu r n - O n D e l a y Ti m e T d ( o n) - 18.5 25 - 16.5 20 - 60 90 Tu r n - O n R i s e Ti m e t rr Tu r n - O f f D e l a y Ti m e VDD=30V , RL=15Ω ID=2A , VGEN=10V RG=2.5Ω t d (o ff) ns Tu r n - O f f F a l l Ti m e tf - 9 .0 20 In p u t C a p a c i t a n c e C iss - 4200 - O ut p ut C a p a c i t a nc e C oss - 810 - R e v e r s e Tr a n s f e r C a p a c i t a n c e C rss - 550 - V D S = 2 5 V , V GS = 0 V f=1 .0 MHZ pF S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is - - - 75 A V SD IS = 3 0 A , V G S = 0 V - 0 .9 8 1 .5 V V DD Switching Test Circuit V IN V DD Gate Charge Test Circuit RL V GS RL V OUT RG 1mA RG STAD-JUN.19.2006 PAGE . 2 PJP75N06 Typical Characteristics Curves (TA=25OC,unless otherwise noted) 80 V GS=4.0V, 4.5V, 5.0V, 6.0V, 10.0V ID - Drain Source Current (A) ID - Drain-to-Source Current (A) 100 80 3.5V 60 40 3.0V 20 2.5V 0 V DS=10V 60 40 T J=25 OC 20 T J=125 OC 0 0 1 2 3 4 5 1 V DS - Drain-to-Source Voltage (V) R DS(ON) - On-Resistance (m W ) R DS(ON) - On-Resistance (m W ) 2.5 3 3.5 50 25 20 V GS=4.5V 15 10 V GS=10V 5 0 0 20 40 60 80 100 ID - Drain Current (A) 4 I D=30A 40 30 T J=125 OC 20 10 T J=25 OC 0 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) FIG.3- On Resistance vs Drain Current 1.8 2 FIG.2- Transfer Characteristic 30 2 1.5 V GS - Gate-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic R DS(ON) - On-Resistance (Normalized) T J=-55 OC FIG.4- On Resistance vs Gate to Source Voltage V GS=10V I D=30A 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 o TJ - Junction Temperature ( C) FIG.5- On Resistance vs Junction Temperature STAD-JUN.19.2006 PAGE . 3 VGS - Gate-to-Source Voltage (V) PJP75N06 Vgs Qg Qsw Vgs(th) 10 V DS =30V I D =30A 8 6 4 2 0 0 Qg(th) Qgs BVDSS - Breakdown Voltage (V) Vth - G-S Threshold Voltage (NORMALIZED) 1.1 1 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 TJ - Junction Tem perature ( oC) 150 30 40 50 60 70 80 125 150 Fig.7 - Gate Charge 76 I D =250uA 1.2 20 Qg - Gate Charge (nC) Fig.6 - Gate Charge Waveform 1.3 10 Qg Qgd I D =250uA 74 72 70 68 66 64 62 -50 -25 0 25 50 75 100 TJ - Junction Tem perature ( oC) Fig.8 - Threshold Voltage vs Temperature Fig.9 - Breakdown Voltage vs Junction Temperature 100 IS - Source Current (A) V GS =0V 10 T J =125 OC T J =-55 OC 1 T J =25 OC 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD - Source-to-Drain Voltage (V) 1.6 Fig.10 - Source-Drain Diode Forward Voltage LEGAL STATEMENT Copyright PanJit International, Inc 2006 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-JUN.19.2006 PAGE . 4