PJB75N75 75V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=11mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls • Fully Characterized Avalanche Voltage and Current • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: D2PAK / TO-263 Molded Plastic Drain • Terminals : Solderable per MIL-STD-750,Method 2026 • Marking : B75N75 Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R S ym b o l Li mi t U ni t s D r a i n- S o ur c e Vo l t a g e V DS 75 V G a t e - S o ur c e Vo l t a g e VGS +20 V ID 75 A ID M 350 A PD 105 6 2 .5 W TJ ,TS T G -5 5 to +1 5 0 EAS 660 Junction-to-Case Thermal Resistance RθJ C 1 .2 O C /W Junction-to Ambient Thermal Resistance(PCB mounted)2 RθJ A 62 O C /W C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) M a xi m um P o w e r D i s s i p a t i o n TA = 2 5 O C TA = 7 5 O C O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Avalanche Energy with Single Pulse IAS=47A, VDD=37.5V, L=0.3mH O C mJ Note: 1. Maximum DC current limited by the package PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUN.11.2007 PAGE . 1 PJB75N75 ELECTRICAL CHARACTERISTICS P a ra me te r ( TA=25OC unless otherwise noted ) S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s D r a i n- S o ur c e B r e a k d o w n Vo l t a g e BVD SS V G S = 0 V , ID = 2 5 0 u A 75 - - V G a t e Thr e s ho l d Vo l t a g e V G S (th) V D S = V G S , ID = 2 5 0 u A 1 - 3 V VG S =10V, ID =30A - 8.0 11 VG S =10V, ID =30A, Tc=125O C - - 20 VD S =75V, VG S =0V - - 1 VD S =75V, VG S =0V, Tc=125O C - - 10 S ta ti c D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e mΩ RD S (o n) Ze r o Ga te Vo lta g e D r a i n C ur r e nt ID S S Gate Body Leakage IG S S V G S =+2 0 V, V D S =0 V - - +100 nΑ Forward Transconductance g fS V D S > ID ( O N ) X R D S ( O N ) m a x , ID = 1 5 A 20 - - S - 83 - - 8 .9 - uA Dynamic To t a l G a t e C h a r g e Qg G a t e - S o ur c e C ha r g e Qg s G a t e - D r a i n C ha r g e Qg d - 24.3 - Tu r n - O n D e l a y Ti m e td (o n) - 18.2 22 - 15.6 20 - 7 0 .5 90 Tu r n - O n R i s e Ti m e tr Tu r n - O f f D e l a y Ti m e td (o ff) V D S = 3 0 V , ID = 3 0 A V G S =10V VD D =30V , RL =15Ω ID =2A , VG E N =10V RG =2.5Ω nC ns Tu r n - O f f F a l l Ti m e tf - 1 3 .8 18 In p u t C a p a c i t a n c e Ciss - 3150 - O ut p ut C a p a c i t a nc e Coss - 300 - R e v e r s e Tr a n s f e r C a p a c i t a nc e C rs s - 240 - V D S =2 5 V, V G S =0 V f=1 .0 MHZ pF S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is - - - 75 A VSD IS = 3 0 A , V G S = 0 V - 0 .8 5 1 .5 V V DD Switching Test Circuit V IN V DD Gate Charge Test Circuit RL V GS RL V OUT RG 1mA RG STAD-JUN.11.2007 PAGE . 2 PJB75N75 Typical Characteristics Curves (TA=25OC,unless otherwise noted) 10V 100 6.0V 80 4.5V 60 4.0V 40 3.5V 20 3.0V 0 0 1 2 V DS=10V VDS =10V 5.0V ID - Drain Source Current (A) ID - Drain-to-Source Current (A) 100 3 4 80 60 40 TJ = 25oC 20 T J = 125 C O 5 1.5 2 V DS - Drain-to-Source Voltage (V) 4 4.5 9 V GS=10V 8.5 ID =30A R DS(ON) - On-Resistance (m W ) R DS(ON) - On-Resistance (m W ) 3.5 50 9.5 8 7.5 7 6.5 40 30 T J=125 OC 20 10 T J=25 OC 0 6 0 20 40 60 80 2 100 4 6 8 FIG.3- On Resistance vs Drain Current FIG.4- On Resistance vs Gate to Source Voltage 6000 C - Capacitance (pF) V GS=10V I D=30A 1.6 1.4 1.2 1.0 0.8 V GS =0V f=1MHz 5000 4000 Ciss 3000 2000 1000 Coss 0.6 Crss 0 0.4 -50 10 V GS - Gate-to-Source Voltage (V) ID - Drain Current (A) RDS(ON) - On-Resistance (Normalized) 3 FIG.2- Transfer Characteristic 10 1.8 2.5 V GS - Gate-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic 2.0 T J=-55 OC 0 -25 0 25 50 75 100 125 150 TJ - Junction Tem perature (oC) FIG.5- On Resistance vs Junction Temperature STAD-JUN.11.2007 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) FIG.6 - Capacitance PAGE . 3 10 100 V DS=30V I D=30A 8 IS - Source Current (A) VGS - Gate-to-Source Voltage (V) PJB75N75 6 4 2 V GS=0V 10 T J=125 OC 1 T J=-55 OC 0.1 0 0 10 20 30 40 50 60 70 80 0.2 90 1.1 1.0 0.8 1 1.2 1.4 1.6 0.8 1.1 1.05 1 150 Fig.8 - Threshold Voltage vs Junction Temperature 0.95 0.9 -50 0.7 75 100 125 50 25 0 -25 TJ - Junction Tem perature ( oC) I D=250uA 1.15 BVDSS - 0.9 Breakdown Voltage (NORMALIZED) 1.2 I D=250uA -50 0.6 Fig.10 - Source-Drain Diode Forward Voltage Fig.7 - Gate Charge 1.2 0.4 V SD - Source-to-Drain Voltage (V) Qg - Gate Charge (nC) Vth - G-S Threshold Voltage (NORMALIZED) T J=25 OC -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.9 - Breakdown Voltage vs Junction Temperature 100 1000 90 Rds(on) Limited ID - Drain Current (A) ID - Drain Current (A) 80 70 60 Limited by Package 50 40 30 20 100 100us 10 DC 1ms 10ms 1 10 0 25 125 100 75 50 TJ - Junction Temperature (oC) 150 Fig.11 - Maximum Drain Current vs Junction Temperature 0.1 0.1 1000 100 10 1 V DS - Drain-to-Source Voltage (V) Fig.12 - Safe Operation Area LEGAL STATEMENT Copyright PanJit International, Inc 2007 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-JUN.11.2007 PAGE . 4