PANJIT 2N7002KTB6

2N7002KTB6
60V N-Channel Enhancement Mode MOSFET - ESD Protected
SOT-563
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3Ω
• RDS(ON), [email protected],IDS@200mA=4Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
• Case: SOT-563 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
6
5
4
2
3
• Marking : 27
1
Fig.56
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA M E TE R
S ym b o l
Li mi t
Uni ts
D ra i n-S o urc e Vo lta g e
V DS
60
V
G a te -S o ur c e Vo lta g e
V GS
+2 0
V
ID
11 5
mA
ID M
800
mA
PD
200
150
mW
O p e r a ti ng J unc ti o n a nd S to r a g e Te m p e ra tur e
Ra ng e
T J ,T S TG
-5 5 to + 1 5 0
Junction-to Ambient Thermal Resistance(PCB mounted)2
RθJA
883
C o nti nuo us D ra i n C urr e nt
P uls e d D r a i n C urr e nt
1)
O
M a xi m um P o we r D i s s i p a ti o n
T A =2 5 C
T A =7 5 O C
O
O
C
C /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
July 13.2010-REV.00
PAGE . 1
2N7002KTB6
ELECTRICALCHARACTERISTICS
P a ra m e te r
S ym b o l
Te s t C o nd i ti o n
M i n.
Typ .
M a x.
Uni ts
D ra i n-S o urc e B re a k d o wn
Vo lta g e
B V DSS
V GS =0 V, ID =1 0 μ A
60
-
-
V
G a te Thre s ho ld Vo lta g e
V GS ( th)
V D S =V GS , ID =2 5 0 μ A
1
-
2 .5
V
R D S ( o n)
VGS=4.5V, I D=200mA
-
-
4 .0
R D S ( o n)
VGS=10V, I D=500mA
-
-
3.0
ID S S
VDS=60V, VGS=0V
-
-
1
μA
Gate Body Leakage
I GS S
V GS =+2 0 V, V D S =0 V
-
-
+1 0
μA
Forward Transconductance
g fS
V D S = 1 5 V, I D = 2 5 0 m A
100
-
-
mS
To ta l Ga te C ha r g e
Qg
V D S = 1 5 V, I D = 2 0 0 m A
VGS=4.5V
-
-
0 .8
nC
Tur n- On D e la y Ti m e
ton
-
-
20
Tur n- Off D e la y Ti m e
t o ff
-
-
40
Inp ut C a p a c i ta nc e
C iss
-
-
35
O utp ut C a p a c i ta nc e
C oss
-
-
10
Re ve r s e Tra ns fe r
C a p a c i ta nc e
C rss
-
-
5
S ta ti c
D ra i n-S o urc e On-S ta te
Re s i s ta nc e
D ra i n-S o urc e On-S ta te
Re s i s ta nc e
Ze r o Ga te Vo lta g e D ra i n
C ur re nt
Ω
Dynamic
VDD=30V , RL=150Ω
ID=200mA , VGEN=10V
RG=10Ω
V D S = 2 5 V, V GS =0 V
f=1 .0 M H Z
ns
pF
S o urc e - D r a i n D i o d e
D i o d e F o rwa r d Vo lta g e
C o nti nuo us D i o d e F o r wa rd
C ur re nt
P uls e d D i o d e F o r wa rd
C ur re nt
Switching
Test Circuit
V SD
IS =2 0 0 m A , V GS =0 V
-
0 .8 2
1 .3
V
Is
-
-
-
11 5
mA
Is M
-
-
-
800
mA
Gate Charge
Test Circuit
VDD
VIN
RL
VDD
VGS
RL
VOUT
RG
1mA
RG
July 13.2010-REV.00
PAGE . 2
2N7002KTB6
O
Typical Characteristics Curves (TA=25 C,unless otherwise noted)
ID - Drain-to-Source Current (A)
V GS = 6.0~10V
ID - Drain Source Current (A)
1.2
5.0V
5.0V
1
4.0V
0.8
4.0V
0.6
0.4
3.0V
0.2
3.0V
0
0
1
2
3
4
1.2
V DS=10V
1
0.8
0.6
0.4
T J=25℃
0.2
0
0
5
3
4
5
6
5
R DS(ON) - On-Resistance ( W )
5
R DS(ON) - On-Resistance ( W )
2
FIG.2- Transfer Characteristic
FIG.1- Output Characteristic
4
3
V GS = 4.5V
2
1
V GS=10V
0
4
3
ID =500m A
2
IIDD=200m
A
=200mA
1
0
0
0.2
0.4
0.6
0.8
1
2
3
4
5
6
7
8
9
10
V GS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
FIG.3- On Resistance vs Drain Current
RDS(ON) - On-Resistance(Normalized)
1
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
FIG.4- On Resistance vs Gate to Source Voltage
1.8
1.6
VGS =10V
ID =500mA
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (o C)
FIG.5- On Resistance vs Junction Temperature
July 13.2010-REV.00
PAGE . 3
V GS - Gate-to-Source Voltage (V)
2N7002KTB6
Vgs
Qg
Qsw
Vgs(th)
10
V DS=10V
I D=250mA
8
6
4
2
0
0
Qg(th)
Qgs
Qg
Qgd
ID =250mA
1.1
1
0.9
0.8
-25
0
25
50
75
100
125
150
o
1
88
86
ID = 250uA
84
82
80
78
76
74
72
-50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature ( C)
Fig.8 - Threshold Voltage vs Temperature
IS - Source Current (A)
0.8
o
TJ - Junction Temperature ( C)
10
0.6
Fig.7 - Gate Charge
BVDSS - Breakdown Voltage (V)
Vth - G-S Threshold Voltage (NORMALIZED)
1.2
0.4
Qg - Gate Charge (nC)
Fig.6 - Gate Charge Waveform
0.7
-50
0.2
Fig.9 - Breakdown Voltage vs Junction Temperature
V GS=0V
1
0.1
25℃
T J=125℃
-55℃
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD - Source-to-Drain Voltage (V)
Fig.10 - Source-Drain Diode Forward Voltage
July 13.2010-REV.00
PAGE . 4
2N7002KTB6
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 4K per 7" plastic Reel
T/R - 10K per 13" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
July 13.2010-REV.00
PAGE . 5