PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current - Continuous 50 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation Max Units PN918 350 2.8 125 *MMBT918 225 1.8 357 556 mW mW/°C °C/W °C/W (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS VCEO(sus) Collector-Emitter Sustaining Voltage* IC = 3.0 mA, IB = 0 15 V V(BR)CBO Collector-Base Breakdown Voltage IC = 1.0 µA, IE = 0 30 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 3.0 V ICBO Collector Cutoff Current VCB = 15 V, IE = 0 VCB = 15 V, TA = 150°C 0.01 1.0 µA µA ON CHARACTERISTICS hFE DC Current Gain IC = 3.0 mA, VCE = 1.0 V VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 20 0.4 V VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 1.0 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo Output Capacitance Cibo Input Capacitance NF Noise Figure IC = 4.0 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz VCB = 0, IE = 0, f = 1.0 MHz VBE = 0.5 V, IC = 0, f = 1.0 MHz 600 IC = 1.0 mA, VCE = 6.0 V, RG = 400Ω, f = 60 MHz MHz 1.7 3.0 2.0 pF pF pF 6.0 dB FUNCTIONAL TEST Gpe Amplifier Power Gain PO Power Output η Collector Efficiency *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% VCB = 12 V, IC = 6.0 mA, f = 200 MHz VCB = 15 V, IC = 8.0 mA, f = 500 MHz VCB = 15 V, IC = 8.0 mA, f = 500 MHz 15 dB 30 mW 25 % PN918 / MMBT918 NPN RF Transistor (continued) VCE = 5V 90 80 125 °C 70 60 25 °C 50 - 40 °C 40 30 20 0.1 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA) 50 Base-Emitter Saturation Voltage vs Collector Current β = 10 1 - 40 °C 0.8 25 °C 125 °C 0.6 0.4 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 30 V CES AT- COLLECTOR-EMITTER VOLTAGE (V) 100 V BE(ON) - BASE-EMITTER ON VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current V BESAT - BASE-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.3 0.2 125 °C 0.15 0.1 25 °C - 40 °C 0.05 0.1 1 10 I C - COLLECTOR CURRENT (mA) 1 V CE = 5V 0.9 0.8 - 40 °C 25 °C 0.7 0.6 125 °C 0.5 0.4 0.3 0.1 1 10 I C - COLLECTOR CURRENT (mA) 20 Input and Output Capacitance vs Reverse Voltage 5 100 f = 1.0 MHz CAPACITANCE (pF) VCB = 20V 1 0.1 25 30 Base-Emitter ON Voltage vs Collector Current Collector-Cutoff Current vs Ambient Temperature I CBO - COLLECTOR CURRENT (nA) β = 10 0.25 50 75 100 125 T A - AMBIENTTEMPERATURE ( ° C) 150 10 Cob 1 Cib 0.1 0.1 1 10 V CE - COLLECTOR VOLTAGE (V) 100 PN918 / MMBT918 NPN RF Transistor (continued) (continued) Contours of Constant Gain Bandwidth Product (fT ) Gain Bandwidth Product vs Collector Current Vce = 5V 1050 VCE - COLLECTOR VOLTAGE (V) f T - GAIN BANDWIDTH PRODUCT (MHz) Typical Characteristics 900 750 600 450 300 150 10 20 50 100 200 900 MHz 12 300 MHz 600 MHz 6 400 MHz 3 600 MHz 0.2 h FE -SMALL SIGNAL CURRENT TRANS RATIO Contours of Constant Noise Figure 200 100 50 f = 60 MHz VCE = 6.0V 0.5 1 5 10 50 100 I C - COLLECTOR CURRENT (mA) 20 50 100 VCE = 10V 80 70 60 50 40 0 2 4 TO-92 SOT-23 150 100 50 0 50 75 100 TEMPERATURE ( ° C) 6 8 I C - COLLECTOR CURRENT (mA) 250 25 10 f = 10 MHz 300 0 200 MHz 5 90 350 200 1 Small Signal Current Gain vs Collector Current Power Dissipation vs Ambient Temperature P D - POWER DISSIPATION (mW) R S - SOURCE RESISTANCE ( Ω) 500 10 0.1 0.5 I C - COLLECTOR CURRENT (mA) 1000 NOISE FIG. (dB) 800 MHz 9 I C - COLLECTOR CURRENT (mA) 20 T A = 25 ° C 100 MHz 0 0.1 0 1 15 125 150 10 PN918 / MMBT918 NPN RF Transistor (continued) Common Emitter Y Parameters vs. Frequency 2 Input Admittance vs Collector Current-Output Short Circuit Y ie - INPUT ADMITTANCE (mmho) Y ie - INPUT ADMITTANCE (mmho) Input Admittance vs Collector Current-Output Short Circuit f = 10.7 MHz VCE = 10V 1.6 g ie 1.2 0.8 b ie 0.4 0 0 2 4 6 8 10 f = 100 MHz 8 VCE = 10V 4 VCE = 5V 2 0 0 10 2 15 10 5 b ie 0 10 20 50 100 200 500 1000 f - FREQUENCY (MHz) Yfe-FORWARD TRANS ADMITTANCE (mmho) Forward Trans. Admittance vs Collector Current-Output Short Circuit 120 f = 10.7 MHz VCE = 10V 100 g fe 80 60 40 20 -b fe 0 0 2 4 6 8 I C - COLLECTOR CURRENT (mA) 10 FORWARD TRANS. ADMITTANCE (mmho) 20 8 100 10 I c = 5.0 mA VCE = 10V 80 60 40 -b fe 20 fe - g ie VCE = 10V 6 Forward Transfer Admittance vs Frequency-Output Open Circuit g fe 0 10 20 50 100 200 500 1000 f - FREQUENCY (MHz) Forward Trans. Admittance vs Collector Current-Output Short Circuit Yfe-FORWARD TRANS. ADMITTANCE (mmho) Y ie - INPUT ADMITTANCE (mmho) Input Admittance vs Frequency-Output Short Circuit I c = 5.0 mA 4 I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA) 25 VCE = 10V VCE = 5V 6 100 f = 100 MHz VCE = 10V 80 VCE = 5.0V 60 VCE = 5.0V VCE = 10V g fe 40 20 -b fe 0 0 2 4 6 8 I C - COLLECTOR CURRENT (mA) 10 PN918 / MMBT918 NPN RF Transistor (continued) Common Emitter Y Parameters vs. Frequency Yre - REVERSE TRANS. ADMITTANCE (mmho) 0.1 f = 10.7 MHz VCE = 10V -b re 0.08 0.06 0.04 -g re 0.02 0 0 2 4 6 8 Reverse Transfer Admittance vs Collector Current-Input Short Circuit 1 -b re 0.5 0.2 0.1 VCE = 5.0V 0.05 -g re 0.02 VCE = 10V 0 2 4 3 2 1 -g re 0 10 20 50 100 200 500 1000 f - FREQUENCY (MHz) Output Admittance vs Collector Current-Input Short Circuit 2 f = 100 MHz 1.6 VCE = 5.0V boe 1.2 VCE = 10V 0.8 VCE = 5.0V 0.4 g oe VCE = 10V 0 0 2 4 6 8 I C - COLLECTOR CURRENT (mA) 10 Yoe- REVERSE TRANS. ADMITTANCE (mmho) -b re VCE = 10V 4 6 8 10 I C - COLLECTOR CURRENT (mA) Reverse Transfer Admittance vs Frequency-Input Short Circuit I c = 5.0 mA f = 100 MHz 0.01 I C - COLLECTOR CURRENT (mA) 5 VCE = 10V VCE = 5.0V 10 Yoe- REVERSE TRANS. ADMITTANCE (mmho) Yoe - REVERSE TRANS. ADMITTANCE (mmho) Yre - REVERSE TRANS. ADMITTANCE (mmho) Yre - REVERSE TRANS. ADMITTANCE (mmho) Reverse Transfer Admittance vs Collector Current-Input Short Circuit (continued) Output Admittance vs Collector Current-Input Short Circuit 0.3 f = 10.7 MHz VCE = 10V 0.25 boe 0.2 0.15 g oe 0.1 0.05 0 0 2 4 6 8 10 I C - COLLECTOR CURRENT (mA) Output Admittance vs Frequency-Input Short Circuit 10 8 I c = 5.0 mA b oe VCE = 10V 6 4 2 g oe 0 10 20 50 100 200 f - FREQUENCY (MHz) 500 1000 PN918 / MMBT918 NPN RF Transistor (continued) Test Circuit 50 pF (NOTE 2) 175 pF 500 mHz Output Ω into 50Ω RFC (NOTE 1) 1000 pF Ω 2.2 KΩ - Vee NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long 1000 pF RFC VCC FIGURE 1: 500 MHz Oscillator Circuit PN918 / MMBT918 NPN RF Transistor TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample See Fig 2.0 for various Reeling Styles FAIRCHILD SEMICONDUCTOR CORPORATION LOT: CBVK741B019 PN2222N NSID: D/C1: HTB:B QTY: 10000 SPEC: D9842 SPEC REV: FSCINT Label B2 QA REV: 5 Reels per Intermediate Box (FSCINT) Customized Label F63TNR Label sample LOT: CBVK741B019 FSID: PN222N D/C1: D9842 D/C2: F63TNR Label QTY: 2000 SPEC: QTY1: QTY2: SPEC REV: CPN: N/F: F Customized Label (F63TNR)3 375mm x 267mm x 375mm Intermediate Box TO-92 TNR/AMMO PACKING INFROMATION Packing Style Quantity EOL code Reel A 2,000 D26Z E 2,000 D27Z Ammo M 2,000 D74Z P 2,000 D75Z AMMO PACK OPTION See Fig 3.0 for 2 Ammo Pack Options FSCINT Label Unit weight = 0.22 gm Reel weight with components = 1.04 kg Ammo weight with components = 1.02 kg Max quantity per intermediate box = 10,000 units 327mm x 158mm x 135mm Immediate Box Customized Label (TO-92) BULK PACKING INFORMATION EOL CODE DESCRIPTION QUANTITY TO-18 OPTION STD NO LEAD CLIP 2.0 K / BOX J05Z TO-5 OPTION STD NO LEAD CLIP 1.5 K / BOX NO LEADCLIP 2.0 K / BOX NO LEADCLIP 2.0 K / BOX TO-92 STANDARD STRAIGHT FOR: PKG 92, 94 (NON PROELECTRON SERIES), 96 L34Z TO-92 STANDARD STRAIGHT FOR: PKG 94 (PROELECTRON SERIES BCXXX, BFXXX, BSRXXX), 97, 98 Customized Label F63TNR Label 333mm x 231mm x 183mm Intermediate Box BULK OPTION LEADCLIP DIMENSION J18Z NO EOL CODE 5 Ammo boxes per Intermediate Box See Bulk Packing Information table Anti-static Bubble Sheets FSCINT Label 2000 units per EO70 box for std option 114mm x 102mm x 51mm Immediate Box 5 EO70 boxes per intermediate Box 530mm x 130mm x 83mm Intermediate box Customized Label FSCINT Label 10,000 units maximum per intermediate box for std option ©2001 Fairchild Semiconductor Corporation March 2001, Rev. B1 TO-92 Tape and Reel Data, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option “A” (H) Machine Option “E” (J) Style “A”, D26Z, D70Z (s/h) Style “E”, D27Z, D71Z (s/h) TO-92 Radial Ammo Packaging Configuration: Figure 3.0 FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP ORDER STYLE D74Z (M) FIRST WIRE OFF IS EMITTER (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM ORDER STYLE D75Z (P) FIRST WIRE OFF IS COLLECTOR (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP September 1999, Rev. B TO-92 Tape and Reel Data, continued TO-92 Tape and Reel Taping Dimension Configuration: Figure 4.0 Hd P Pd b Ha W1 d L H1 HO L1 S WO t W2 W t1 P1 F1 DO P2 PO User Direction of Feed TO-92 Reel Configuration: Figure 5.0 ITEM DESCRIPTION SYMBOL DIMENSION Base of Package to Lead Bend b 0.098 (max) Component Height Ha 0.928 (+/- 0.025) Lead Clinch Height HO 0.630 (+/- 0.020) Component Base Height H1 0.748 (+/- 0.020) Component Alignment ( side/side ) Pd 0.040 (max) Component Alignment ( front/back ) Hd 0.031 (max) Component Pitch P 0.500 (+/- 0.020) Feed Hole Pitch PO 0.500 (+/- 0.008) Hole Center to First Lead P1 0.150 (+0.009, -0.010) Hole Center to Component Center P2 0.247 (+/- 0.007) Lead Spread F1/F2 0.104 (+/- 0 .010) Lead Thickness d 0.018 (+0.002, -0.003) Cut Lead Length L 0.429 (max) Taped Lead Length L1 0.209 (+0.051, -0.052) Taped Lead Thickness t 0.032 (+/- 0.006) Carrier Tape Thickness t1 0.021 (+/- 0.006) Carrier Tape Width W 0.708 (+0.020, -0.019) Hold - down Tape Width WO 0.236 (+/- 0.012) Hold - down Tape position W1 0.035 (max) Feed Hole Position W2 0.360 (+/- 0.025) Sprocket Hole Diameter DO 0.157 (+0.008, -0.007) Lead Spring Out S 0.004 (max) Note : All dimensions are in inches. ELECT ROSTATIC SEN SITIVE D EVICES D4 D1 D2 F63TNR Label ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM Reel Diameter D1 13.975 14.025 Arbor Hole Diameter (Standard) D2 1.160 1.200 D2 0.650 0.700 Customized Label (Small Hole) W1 Core Diameter D3 3.100 3.300 Hub Recess Inner Diameter D4 2.700 3.100 Hub Recess Depth W1 0.370 0.570 Flange to Flange Inner Width W2 1.630 Hub to Hub Center Width W3 1.690 2.090 W3 W2 Note: All dimensions are inches D3 July 1999, Rev. A TO-92 Package Dimensions TO-92 (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.1977 ©2000 Fairchild Semiconductor International January 2000, Rev. B SOT-23 Tape and Reel Data SOT-23 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 units per 7" or 177cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 10,000 units per 13" or 330cm diameter reel. This and some other options are described in the Packaging Information table. Antistatic Cover Tape Human Readable Label These full reels are individually labeled and placed inside a standard intermediate made of recyclable corrugated brown paper with a Fairchil d logo printing. One pizza box contains eight reels maximum. And these intermediate boxes are placed inside a labeled shipping box which comes in different sizes depending on the number of parts shipped. Embossed Carrier Tape 3P 3P 3P 3P SOT-23 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Standard (no flow code) TNR 3,000 D87Z 7" Dia 13" 187x107x183 343x343x64 Max qty per Box 24,000 30,000 Weight per unit (gm) 0.0082 0.0082 Weight per Reel (kg) 0.1175 0.4006 Reel Size Box Dimension (mm) SOT-23 Unit Orientation TNR 10,000 343mm x 342mm x 64mm Intermediate box for L87Z Option Human Readable Label Note/Comments Human Readable Label sample H uman readable Label 187mm x 107mm x 183mm Intermediate Box for Standard Option SOT-23 Tape Leader and Trailer Configuration: Figure 2.0 Carrier Tape Cover Tape Components Trailer Tape 300mm minimum or 75 empt y poc kets ©2000 Fairchild Semiconductor International Leader Tape 500mm minimum or 125 empty pockets September 1999, Rev. C SOT-23 Tape and Reel Data, continued SOT-23 Embossed Carrier Tape Configuration: Figure 3.0 P0 P2 D1 D0 T E1 W F E2 Wc B0 Tc A0 P1 K0 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 SOT-23 (8mm) 3.15 +/-0.10 2.77 +/-0.10 W 8.0 +/-0.3 D0 D1 E1 E2 1.55 +/-0.05 1.125 +/-0.125 1.75 +/-0.10 F 6.25 min 3.50 +/-0.05 P1 P0 4.0 +/-0.1 4.0 +/-0.1 K0 T 1.30 +/-0.10 0.228 +/-0.013 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). Wc 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 5.2 +/-0.3 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SOT-23 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) 8mm 7" Dia 7.00 177.8 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 – 0.429 7.9 – 10.9 8mm 13" Dia 13.00 330 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 4.00 100 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 – 0.429 7.9 – 10.9 September 1999, Rev. C SOT-23 Package Dimensions SOT-23 (FS PKG Code 49) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0082 ©2000 Fairchild Semiconductor International September 1998, Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G