25F(R) Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 25 A FEATURES • High surge current capability RoHS • Stud cathode and stud anode version COMPLIANT • Wide current range • Types up to 1200 V VRRM • RoHS compliant TYPICAL APPLICATIONS • Battery charges DO-203AA (DO-4) • Converters PRODUCT SUMMARY • Power supplies IF(AV) 25 A • Machine tool controls MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) VALUES UNITS 25 A TC 120 °C 40 A 50 Hz 356 60 Hz 373 50 Hz 636 60 Hz 580 Range 100 to 1200 V - 65 to 175 °C IF(RMS) IFSM I2 t VRRM TJ A A2 s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER 25F(R) VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V VR(BR), MINIMUM AVALANCHE VOLTAGE V (1) 10 100 150 - 20 200 275 - 40 400 500 500 60 600 725 750 80 800 950 950 100 1000 1200 1150 120 1200 1400 1350 IRRM MAXIMUM AT TJ = 175 °C mA 12 Note (1) Avalanche version only available from V RRM 400 V to 1200 V Document Number: 93506 Revision: 29-Sep-08 For technical questions, contact: [email protected] www.vishay.com 1 25F(R) Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 25 A FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature Maximum RMS forward current Maximum on-repetitive peak reverse power Maximum peak, one-cycle forward, non-repetitive surge current IF(AV) TEST CONDITIONS VALUES UNITS 25 A 120 °C 40 A 10 µs square pulse, TJ = TJ maximum 10 K/W t = 10 ms No voltage reapplied 356 100 % VRRM reapplied 300 180° conduction, half sine wave IF(RMS) PR(1) t = 8.3 ms IFSM t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I2√t No voltage reapplied 373 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied A 314 636 580 450 A2s 410 t = 0.1 to 10 ms, no voltage reapplied 6360 Low level value of threshold voltage VF(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.80 High level value of threshold voltage VF(TO)2 (I > π x IF(AV)), TJ = TJ maximum 0.90 A2√s V Low level value of forward slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 6.80 High level value of forward slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 5.70 Ipk = 78 A, TJ = 25 °C, tp = 400 µs rectangular wave 1.30 V VALUES UNITS Maximum forward voltage drop mΩ VFM Note (1) Available only for avalanche version, all other parameters the same as 25F THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range SYMBOL TEST CONDITIONS TJ - 65 to 175 Maximum storage temperature range TStg - 65 to 200 Maximum thermal resistance, junction to case RthJC DC operation 1.5 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.5 K/W Not lubricated threads 1.5 + 0 - 10 % (13) N·m (lbf · in) Lubricated threads 1.2 + 0 - 10 % (10) N·m (lbf · in) 7 g 0.25 oz. Allowable mounting torque Approximate weight Case style www.vishay.com 2 °C See dimensions - link at the end of datasheet For technical questions, contact: [email protected] DO-203AA (DO-4) Document Number: 93506 Revision: 29-Sep-08 25F(R) Series Standard Recovery Diodes Vishay High Power Products (Stud Version), 25 A ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.28 0.24 120° 0.39 0.41 90° 0.50 0.54 60° 0.73 0.75 30° 1.20 1.21 TEST CONDITIONS UNITS TJ = TJ maximum K/W 180 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 25F(R) Series RthJC (DC) = 1.5 K/W 170 160 150 Conduction Angle 140 130 120 90° 60° 110 120° 180° 30° 100 0 5 10 15 20 25 180 25F(R) Series RthJC (DC) = 1.5 K/W 170 160 150 Conduction Period 140 130 120 90° 60° 110 120° 30° 180° DC 100 30 0 5 10 15 20 25 30 35 40 45 Average Forward Current (A) Fig. 2 - Current Ratings Characteristics 35 SA =1 W K/ aR elt -D RMS Limit R th 20 3 K/ W 4K /W W K/ 25 180° 120° 90° 60° 30° 30 2 Maximum Average Forward Power Loss (W) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics 6K /W 8K /W 15 Conduction Angle 10 12 K /W 20 K/W 25F(R) Series TJ = 175°C 5 40 K/W 0 0 5 10 15 20 25 Average Forward Current (A) 30 0 25 50 75 100 125 150 175 Maximum Allowable Ambient Temperature (°C) Fig. 3 - Forward Power Loss Characteristics Document Number: 93506 Revision: 29-Sep-08 For technical questions, contact: [email protected] www.vishay.com 3 25F(R) Series Vishay High Power Products Standard Recovery Diodes Maximum Average Forward Power Loss (W) (Stud Version), 25 A 25 DC 180° 120° 90° 60° 30° 20 15 R th SA = 6K /W RMS Limit 4K /W 8K /W -D elt aR 10 K /W 15 K/W 10 20 K/W Conduction Period 30 K/W 5 16F(R) Series TJ = 175°C 0 0 5 10 15 20 25 Average Forward Current (A) 30 0 25 50 75 100 Maximum Allowable Ambient Temperature (°C) 350 1000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 175°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 300 Instantaneous Forward Current (A) Peak Half Sine Wave Forward Current (A) Fig. 4 - Forward Power Loss Characteristics 250 200 150 100 25F(R) Series 100 TJ = 25°C TJ = 175°C 10 25F(R) Series 1 50 1 10 0 100 0.5 350 300 250 200 150 100 50 0 0.01 25F(R) Series 0.1 1 10 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 2 2.5 3 3.5 4 Fig. 7 - Forward Voltage Drop Characteristics Transient Thermal Impedance ZthJC (K/W) Peak Half Sine Wave Forward Current (A) Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 175°C No Voltage Reapplied Rated VRRM Reapplied 1.5 Instantaneous Forward Voltage (V) Number Of Equal Amplitude Half Cycle Current Pulses (N) 400 1 10 Steady State Value RthJC = 1.5 K/W (DC Operation) 1 25F(R) Series 0.1 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics For technical questions, contact: [email protected] Document Number: 93506 Revision: 29-Sep-08 25F(R) Series Standard Recovery Diodes Vishay High Power Products (Stud Version), 25 A ORDERING INFORMATION TABLE Device code 25 F R 120 M 1 2 3 4 5 1 - Current rating: Code = IF(AV) 2 - F = Standard device 3 - None = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) 4 - Voltage code x 10 = VRRM (see Voltage Ratings table) 5 - None = Stud base DO-203AA (DO-4) 10-32UNF-2A M = Stud base DO-203AA (DO-4) M5 X 0.8 (not available for avalanche diodes) LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93506 Revision: 29-Sep-08 http://www.vishay.com/doc?95311 For technical questions, contact: [email protected] www.vishay.com 5 Outline Dimensions Vishay Semiconductors DO-203AA (DO-4) DIMENSIONS in millimeters (inches) + 0.3 0 + 0.01 (0.08 0) 0.8 ± 0.1 (0.03 ± 0.004) 3.30 (0.13) 4.00 (0.16) 2 5.50 (0.22) MIN. R 0.40 R (0.02) Ø 1.80 ± 0.20 (Ø 0.07 ± 0.01) 20.30 (0.80) MAX. Ø 6.8 (0.27) 10.20 (0.40) MAX. 3.50 (0.14) 11.50 (0.45) 10.70 (0.42) 10/32" UNF-2A For metric devices: M5 x 0.8 11 (0.43) Document Number: 95311 Revision: 30-Jun-08 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000