VISHAY SFH615AA/AGB/AGR/ABM/ABL/AY/AB Vishay Semiconductors Optocoupler, High Reliability, 5300 VRMS Features • Low CTR Degradation • Good CTR Linearity Depending on Forward Current • Isolation Test Voltage, 5300 VRMS • High Collector-emitter Voltage, VCEO = 70 V • Low Saturation Voltage • Fast Switching Times • Temperature Stable • Low Coupling Capacitance • End-Stackable, .100 " (2.54 mm) Spacing • High Common-mode Interference Immunity (Unconnected Base) A 1 4 C C 3 E 2 i179060 Order Information Part Remarks SFH615AA CTR 50 - 600 %, DIP-4 SFH615AB CTR 80 - 260 %, DIP-4 SFH615ABL CTR 200 - 600 %, DIP-4 SFH615ABM CTR 200 - 400 %, DIP-4 SFH615AGB CTR 100 - 600 %, DIP-4 SFH615AGR CTR 100 - 300 %, DIP-4 Description SFH615AY CTR 50 - 150 %, DIP-4 The SFH615XXX features a large assortment of current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm lead spacing. Creepage and clearance distances of > 8 mm are achieved with option 6. This version complies with 60950 (DIN VDE 0805) for reinforced insulation up to operation voltage of 400 VRMS or DC. SFH615AA-X006 CTR 50 - 600 %, DIP-4 400 mil (option 6) SFH615AA-X007 CTR 50 - 600 %, SMD-4 (option 7) SFH615ABM-X006 CTR 200 - 400 %, DIP-4 400 mil (option 6) Agency Approvals • UL - File No. E52744 System Code H or J • DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1 Document Number 83672 Rev. 1.4, 19-Apr-04 SFH615ABM-X007 CTR 200 - 400 %, SMD-4 (option 7) SFH615AGB-X006 CTR 100 - 600 %, DIP-4 400 mil (option 6) SFH615AGB-X009 CTR 100 - 600 %, SMD-4 (option 9) SFH615AGR-X006 CTR 100 - 300 %, DIP-4 400 mil (option 6) SFH615AGR-X007 CTR 100 - 300 %, SMD-4 (option 7) SFH615AY-X006 CTR 50 - 150 %, DIP-4 400 mil (option 6) SFH615AY-X008 CTR 50 - 150 %, SMD-4 (option 8) SFH615AY-X009 CTR 50 - 150 %, SMD-4 (option 9) For additional information on the available options refer to Option Information. www.vishay.com 1 SFH615AA/AGB/AGR/ABM/ABL/AY/AB VISHAY Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Reverse voltage Parameter VR 6.0 V DC Forward current IF 60 mA IFSM 2.5 A Pdiss 100 mW Surge forward current Test condition tp ≤ 1.0 ms Power dissipation Unit Output Symbol Value Unit Collector-emitter voltage Parameter Test condition VEC 70 V Emitter-collector voltage VCE 7.0 V Collector current IC 50 mA IC 100 mA Pdiss 150 mW Symbol Value Unit VISO 5300 VRMS Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Insulation thickness between emitter and detector comparative tracking index per DIN IEC 112/VDEO 303, part 1 ≥ 175 tp ≤ 1.0 ms Total power dissipation Coupler Parameter Test condition Isolation test voltage between emitter and detector, refer to climate DIN 40046 part 2, Nov.74 Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 11 Ω ≥ 10 Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to + 100 °C Tj 100 °C Tsld 260 °C Junction temperature Soldering temperature www.vishay.com 2 max. 10 s. dip soldering distance to seating plane ≥ 1.5 mm Document Number 83672 Rev. 1.4, 19-Apr-04 VISHAY SFH615AA/AGB/AGR/ABM/ABL/AY/AB Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Typ. Max Forward voltage Parameter IF = 60 mA Test condition VF 1.25 1.65 V Reverse current VR = 6.0 V IR 0.01 10 µA Capacitance VR = 0 V, f = 1.0 MHz Thermal resistance Symbol Min Unit CO 13 pF Rthja 750 K/W Output Parameter Collector-emitter capacitance Test condition VCE = 5 V, f = 1.0 MHz Thermal resistance Symbol Min Typ. Max Unit CCE 5.2 pF Rthja 500 K/W Coupler Parameter Collector-emitter saturation voltage Test condition Part IF = 10 mA, IC = 2.5 mA VCEO = 10 V Typ. Max Unit VCEsat Min 0.25 0.4 V CC 0.4 SFH615AA ICEO 10 100 nA Coupling capacitance Collector-emitter leakage current Symbol pF SFH615AGB ICEO 10 100 nA SFH615AGR ICEO 10 100 nA SFH615ABM ICEO 10 100 nA SFH615ABL ICEO 10 100 nA SFH615AY ICEO 10 100 nA SFH615AB ICEO 10 100 nA Typ. Max Unit Current Transfer Ratio Parameter IC/IF Document Number 83672 Rev. 1.4, 19-Apr-04 Test condition IF = 5.0 mA, VCE = 5.0 V Part Symbol Min SFH615AA CTR 50 600 % SFH615AGB CTR 100 600 % SFH615AGR CTR 100 300 % SFH615ABM CTR 200 400 % SFH615ABL CTR 200 600 % SFH615AY CTR 50 150 % SFH615AB CTR 80 260 % www.vishay.com 3 SFH615AA/AGB/AGR/ABM/ABL/AY/AB VISHAY Vishay Semiconductors Switching Characteristics Parameter Test condition Symbol Min Typ. Max Unit Turn-on time IF = 5.0 mA ton 2.0 µs Turn-off time IF = 5.0 mA toff 25 µs Typical Characteristics (Tamb = 25 °C unless otherwise specified) f = 1.0 MHz IF 1Ω VCC = 5 V 47 Ω isfh615aa_01 isfh615aa_03 Fig. 1 Switching Operation (with Saturation) Fig. 3 Transistor Capacitance (typ.) vs. Collector-Emitter Voltage IF = 10 mA, VCC = 5.0 V isfh615aa_02 Fig. 2 Current Transfer Ratio (typical) vs. Temperature www.vishay.com 4 isfh615aa_04 Fig. 4 Permissible Diode Forward Current vs. Ambient Temperature Document Number 83672 Rev. 1.4, 19-Apr-04 VISHAY SFH615AA/AGB/AGR/ABM/ABL/AY/AB Vishay Semiconductors isfh615aa_05 isfh615aa_08 Fig. 5 Output Characteristics (typ.) Collector Current vs. Collector-Emitter Voltage Fig. 8 Permissible Power Dissipation vs. Temperature Pulse cycle D = parameter, isfh615aa_06 Fig. 6 Permissible Pulse Handling Capability Forward Current vs. Pulse Width isfh615aa_07 Fig. 7 Diode Forward Voltage (typ.) vs. Forward Current Document Number 83672 Rev. 1.4, 19-Apr-04 www.vishay.com 5 SFH615AA/AGB/AGR/ABM/ABL/AY/AB VISHAY Vishay Semiconductors Package Dimensions in Inches (mm) 2 1 pin one ID .255 (6.48) .268 (6.81) ISO Method A 3 4 .179 (4.55) .190 (4.83) .030 (.76) .045 (1.14) .031 (.79) typ. .050 (1.27) typ. .300 (7.62) typ. .130 (3.30) .150 (3.81) 4° typ. i178027 .018 (.46) .022 (.56) .230 (5.84) .250 (6.35) 10° .020 (.508 ) .035 (.89) .050 (1.27) .100 (2.54) 3°–9° .110 (2.79) .130 (3.30) .008 (.20) .012 (.30) Option 6 Option 7 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .300 (7.62) TYP. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .315 (8.0) MIN. .400 (10.16) .430 (10.92) .014 (0.35) .010 (0.25) .331 (8.4) MIN. .406 (10.3) MAX. Option 9 Option 8 .375 (9.53) .395 (10.03) .300 (7.62)ref. .300 (7.62) TYP. .020 (0.50) .000 (0.00) 18486 www.vishay.com 6 .150 (3.81) .130 (3.30) .365 (9.27) MIN. .472 (12.00) MAX. 0040 (.102) 0098 (.249) .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15° max. Document Number 83672 Rev. 1.4, 19-Apr-04 SFH615AA/AGB/AGR/ABM/ABL/AY/AB VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83672 Rev. 1.4, 19-Apr-04 www.vishay.com 7