VISHAY SFH601

SFH601
VISHAY
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection
Features
•
•
•
•
•
•
•
•
Isolation Test Voltage (1.0 s), 5300 VRMS
VCEsat 0.25 (≤ 0.4) V, IF = 10 mA, IC = 2.5 mA
Built to conform to VDE Requirements
Highest Quality Premium Device
Long Term Stability
Storage Temperature, - 55 ° to + 150 °C
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
• CSA 93751
• BSI IEC60950 IEC60065
Description
The SFH601 is an optocoupler with a Gallium Arsenide LED emitter which is optically coupled with a silicon planar phototransistor detector. The component
is packaged in a plastic plug-in case 20 AB DIN
41866.
The coupler transmits signals between two electrically isolated circuits.
A
1
6 B
C
2
5 C
NC
3
4 E
e3
Pb
Pb-free
i179004
Order Information
Part
Remarks
SFH601-1
CTR 40 - 80 %, DIP-6
SFH601-2
CTR 63 - 125 %, DIP-6
SFH601-3
CTR 100 - 200 %, DIP-6
SFH601-4
CTR 160 - 320 %, DIP-6
SFH601-1X006
CTR 40 - 80 %, DIP-6 400 mil (option 6)
SFH601-1X007
CTR 40 - 80 %, SMD-6 (option 7)
SFH601-1X009
CTR 40 - 80 %, SMD-6 (option 9)
SFH601-2X006
CTR 63 - 125 %, DIP-6 400 mil (option 6)
SFH601-2X007
CTR 63 - 125 %, SMD-6 (option 7)
SFH601-2X009
CTR 63 - 125 %, SMD-6 (option 9)
SFH601-3X006
CTR 100 - 200 %, DIP-6 400 mil (option 6)
SFH601-3X007
CTR 100 - 200 %, SMD-6 (option 7)
SFH601-3X009
CTR 100 - 200 %, SMD-6 (option 9)
SFH601-4X006
CTR 160 - 320 %, DIP-6 400 mil (option 6)
SFH601-4X007
CTR 160 - 320 %, SMD-6 (option 7)
SFH601-4X009
CTR 160 - 320 %, SMD-6 (option 9)
For additional information on the available options refer to
Option Information.
Document Number 83663
Rev. 1.4, 26-Oct-04
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1
SFH601
VISHAY
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Symbol
Value
Reverse voltage
Parameter
VR
6.0
V
DC forward current
IF
60
mA
IFSM
2.5
A
Pdiss
100
mW
Surge forward current
Test condition
t =10 µs
Total power dissipation
Unit
Output
Symbol
Value
Unit
Collector-emitter voltage
Parameter
Test condition
VCE
100
V
Emitter-base voltage
VEBO
7.0
V
IC
50
mA
IC
100
mA
Pdiss
150
mW
Symbol
Value
Unit
VISO
5300
VRMS
Collector current
t = 1.0 ms
Power dissipation
Coupler
Parameter
Isolation test voltage 1)
Test condition
t = 1.0 s
Creepage
≥ 7.0
mm
Clearance
≥ 7.0
mm
Isolation thickness between
emitter and detector
≥ 0.4
mm
175
Comparative tracking 2)
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
RIO
≥ 1011
Ω
Storage temperature range
Tstg
- 55 to + 150
°C
Ambient temperature range
Tamb
- 55 to + 100
°C
Tj
100
°C
Tsld
260
°C
VIO = 500 V, Tamb = 100 °C
Junction temperature
Soldering temperature
max. 10 s, dip soldering:
distance to seating plane
≥ 1.5 mm
1)
between emitter and detector referred to climate DIN 40046, part 2, Nov. 74
2)
index per DIN IEC 60112/VDE0303, part 1
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Document Number 83663
Rev. 1.4, 26-Oct-04
SFH601
VISHAY
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
Symbol
Min
Typ.
Max
1.25
1.65
Unit
Forward voltage
IF = 60 mA
VF
Breakdown voltage
IR = 10 µA
VBR
Reverse current
VR = 6.0 V
IR
0.01
Capacitance
VF = 0 V, f = 1.0 MHz
CO
25
pF
Rthja
750
K/W
Thermal resistance
V
6.0
V
µA
10
Output
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Collector-emitter capacitance
f = 1.0 MHz, VCE = 5.0 V
CCE
6.8
pF
Collector - base capacitance
f = 1.0 MHz, VCB = 5.0 V
CCB
8.5
pF
Emitter - base capacitance
f = 1.0 MHz, VEB = 5.0 V
CEB
11
pF
RTHJamb
500
K/W
SFH601-1
ICEO
2.0
SFH601-2
ICEO
SFH601-3
ICEO
SFH601-4
ICEO
Symbol
Min
Thermal resistance
Collector-emitter leakage
current
VCE = 10 V
50
nA
2.0
50
nA
5.0
100
nA
5.0
100
nA
Coupler
Parameter
Test condition
Saturation voltage, collectoremitter
IF = 10 mA, IC = 2.5 mA
Capacitance (input-output)
VI-O = 0 , f = 1.0 MHz
Typ.
Max
Unit
VCEsat
0.25
0.4
V
CIO
0.6
pF
Current Transfer Ratio
Current Transfer Ratio and Collector-Emitter Leakage Current by Dash Number
Parameter
IC/IF at VCE = 5.0 V
Test condition
IF = 10 mA
IF = 1.0 mA
Document Number 83663
Rev. 1.4, 26-Oct-04
Part
Symbol
Min
Max
Unit
SFH601-1
CTR
40
Typ.
80
%
SFH601-2
CTR
63
125
%
SFH601-3
CTR
100
200
%
320
%
SFH601-4
CTR
160
SFH601-1
CTR
13
30
%
SFH601-2
CTR
22
45
%
SFH601-3
CTR
34
70
%
SFH601-4
CTR
56
90
%
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SFH601
VISHAY
Vishay Semiconductors
Switching Non-saturated
Parameter
Current
Rise time
Fall time
Turn-on time
Turn-off time
tf
ton
toff
µs
µs
2.0
3.0
2.3
Fall time
Tutn-on time
Turn-off time
ton
toff
VCC = 5.0 V, RL = 75 Ω
Test condition
Symbol
IF
tr
Unit
mA
µs
10
2.0
Current
Rise time
Switching Saturated
Parameter
Test condition
VCEsat = 0.25 (≤ 0.4) V
Symbol
IF
tr
tf
Unit
mA
µs
µs
µs
µs
SFH601-1
20
2.0
11
3.0
18
SFH601-2
10
3.0
14
4.2
23
SFH601-3
10
3.0
14
4.2
23
SFH601-4
0.5
4.6
15
6.0
25
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
(TA = –25°C, VCE = 5.0 V)
IC/IF = f (IF)
IF
RL = 75 Ω
IC
VCC = 5 V
47 Ω
isfh600_03
isfh601_01
Figure 1. Linear Operation ( without Saturation)
Figure 3. Current Transfer Ratio vs. Diode Current
DC
Pulsbetrieb
Pulse
IF
(TA = 0°C, VCE = 5.0 V)
IC/IF = f (IF)
1 KΩ
VCC = 5 V
47 Ω
isfh601_02
isfh601_04
Figure 2. Switching Operation (with Saturation)
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Figure 4. Current Transfer Ratio vs. Diode Current
Document Number 83663
Rev. 1.4, 26-Oct-04
SFH601
VISHAY
Vishay Semiconductors
DC
Pulsbetrieb
Pulse
DC
Pulsbetrieb
Pulse
(VCE = 5.0 V)
IC/IF = f (IF)
(IF = 10 mA, VCE = 5.0 V)
IC/IF = f (T)
isfh601_05
isfh601_08
Figure 8. Current Transfer Ratio vs. Diode Current
Figure 5. Current Transfer Ratio vs. Diode Current
DC
Pulsbetrieb
Pulse
DC
Pulsbetrieb
Pulse
(TA = 50°C, VCE = 5.0 V)
IC/IF = f (IF)
IC = f (VCE)
(IF = 0)
isfh601_06
isfh601_09
Figure 9. Transistor Characteristics
Figure 6. Current Transfer Ratio vs. Diode Current
DC
Pulsbetrieb
Pulse
DC
Pulsbetrieb
Pulse
(TA = 75°C, VCE = 5.0 V)
IC/IF = f (IF)
IC=f(VCE)
isfh601_07
isfh601_10
Figure 7. Current Transfer Ratio vs. Diode Current
Document Number 83663
Rev. 1.4, 26-Oct-04
Figure 10. Output Characteristics
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SFH601
VISHAY
Vishay Semiconductors
VF = f (IF)
VCEsat = f (IC)
isfh601_11
isfh601_14
Figure 11. Forward Voltage
Figure 14. Saturation Voltage vs. Collector Current and Modulation
Depth SFH601-2
ICEO = f (V,T)
(IF = 0)
VCEsat = f (IC)
isfh601_15
isfh601_12
Figure 12. Collector-Emitter Off-state Current
Figure 15. Saturation Voltage vs. Collector Current and Modulation
Depth SFH601-3
VCEsat
VCEsat = f (IC)
VCEsat = f (IC)
mA
isfh601_13
Figure 13. Saturation Voltage vs. Collector Current and Modulation
Depth SFH601-1
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isfh601_16
Figure 16. Saturation Voltage vs. Collector Current and Modulation
Depth SFH601-4
Document Number 83663
Rev. 1.4, 26-Oct-04
SFH601
VISHAY
Vishay Semiconductors
D = parameter,
IF = f (tp)
isfh601_17
Figure 17. Permissible Pulse Load
Ptot = f (TA)
isfh601_18
Figure 18. Permissible Power Dissipation for Transistor and Diode
Ptot = f (TA)
isfh601_19
Figure 19. Permissible Forward Current Diode
Document Number 83663
Rev. 1.4, 26-Oct-04
www.vishay.com
7
SFH601
VISHAY
Vishay Semiconductors
Package Dimensions in Inches (mm)
3
2
1
4
5
6
pin one ID
.248 (6.30)
.256 (6.50)
ISO Method A
.335 (8.50)
.343 (8.70)
.300 (7.62)
typ.
.048 (0.45)
.022 (0.55)
.039
(1.00)
Min.
.130 (3.30)
.150 (3.81)
18°
4°
typ.
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
.100 (2.54) typ.
3°–9°
.114 (2.90)
.130 (3.0)
.010 (.25)
typ.
.300–.347
(7.62–8.81)
i178004
Option 6
Option 7
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.300 (7.62)
TYP.
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1) .0040 (.102)
.0098 (.249)
.315 (8.0)
MIN.
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
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.331 (8.4)
MIN.
.406 (10.3)
MAX.
.012 (.30) typ.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
15° max.
18450
Document Number 83663
Rev. 1.4, 26-Oct-04
SFH601
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83663
Rev. 1.4, 26-Oct-04
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