SFH601 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • • • • • • • • Isolation Test Voltage (1.0 s), 5300 VRMS VCEsat 0.25 (≤ 0.4) V, IF = 10 mA, IC = 2.5 mA Built to conform to VDE Requirements Highest Quality Premium Device Long Term Stability Storage Temperature, - 55 ° to + 150 °C Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals • UL1577, File No. E52744 System Code H or J, Double Protection • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 • CSA 93751 • BSI IEC60950 IEC60065 Description The SFH601 is an optocoupler with a Gallium Arsenide LED emitter which is optically coupled with a silicon planar phototransistor detector. The component is packaged in a plastic plug-in case 20 AB DIN 41866. The coupler transmits signals between two electrically isolated circuits. A 1 6 B C 2 5 C NC 3 4 E e3 Pb Pb-free i179004 Order Information Part Remarks SFH601-1 CTR 40 - 80 %, DIP-6 SFH601-2 CTR 63 - 125 %, DIP-6 SFH601-3 CTR 100 - 200 %, DIP-6 SFH601-4 CTR 160 - 320 %, DIP-6 SFH601-1X006 CTR 40 - 80 %, DIP-6 400 mil (option 6) SFH601-1X007 CTR 40 - 80 %, SMD-6 (option 7) SFH601-1X009 CTR 40 - 80 %, SMD-6 (option 9) SFH601-2X006 CTR 63 - 125 %, DIP-6 400 mil (option 6) SFH601-2X007 CTR 63 - 125 %, SMD-6 (option 7) SFH601-2X009 CTR 63 - 125 %, SMD-6 (option 9) SFH601-3X006 CTR 100 - 200 %, DIP-6 400 mil (option 6) SFH601-3X007 CTR 100 - 200 %, SMD-6 (option 7) SFH601-3X009 CTR 100 - 200 %, SMD-6 (option 9) SFH601-4X006 CTR 160 - 320 %, DIP-6 400 mil (option 6) SFH601-4X007 CTR 160 - 320 %, SMD-6 (option 7) SFH601-4X009 CTR 160 - 320 %, SMD-6 (option 9) For additional information on the available options refer to Option Information. Document Number 83663 Rev. 1.4, 26-Oct-04 www.vishay.com 1 SFH601 VISHAY Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Reverse voltage Parameter VR 6.0 V DC forward current IF 60 mA IFSM 2.5 A Pdiss 100 mW Surge forward current Test condition t =10 µs Total power dissipation Unit Output Symbol Value Unit Collector-emitter voltage Parameter Test condition VCE 100 V Emitter-base voltage VEBO 7.0 V IC 50 mA IC 100 mA Pdiss 150 mW Symbol Value Unit VISO 5300 VRMS Collector current t = 1.0 ms Power dissipation Coupler Parameter Isolation test voltage 1) Test condition t = 1.0 s Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Isolation thickness between emitter and detector ≥ 0.4 mm 175 Comparative tracking 2) Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω RIO ≥ 1011 Ω Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to + 100 °C Tj 100 °C Tsld 260 °C VIO = 500 V, Tamb = 100 °C Junction temperature Soldering temperature max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm 1) between emitter and detector referred to climate DIN 40046, part 2, Nov. 74 2) index per DIN IEC 60112/VDE0303, part 1 www.vishay.com 2 Document Number 83663 Rev. 1.4, 26-Oct-04 SFH601 VISHAY Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Symbol Min Typ. Max 1.25 1.65 Unit Forward voltage IF = 60 mA VF Breakdown voltage IR = 10 µA VBR Reverse current VR = 6.0 V IR 0.01 Capacitance VF = 0 V, f = 1.0 MHz CO 25 pF Rthja 750 K/W Thermal resistance V 6.0 V µA 10 Output Parameter Test condition Part Symbol Min Typ. Max Unit Collector-emitter capacitance f = 1.0 MHz, VCE = 5.0 V CCE 6.8 pF Collector - base capacitance f = 1.0 MHz, VCB = 5.0 V CCB 8.5 pF Emitter - base capacitance f = 1.0 MHz, VEB = 5.0 V CEB 11 pF RTHJamb 500 K/W SFH601-1 ICEO 2.0 SFH601-2 ICEO SFH601-3 ICEO SFH601-4 ICEO Symbol Min Thermal resistance Collector-emitter leakage current VCE = 10 V 50 nA 2.0 50 nA 5.0 100 nA 5.0 100 nA Coupler Parameter Test condition Saturation voltage, collectoremitter IF = 10 mA, IC = 2.5 mA Capacitance (input-output) VI-O = 0 , f = 1.0 MHz Typ. Max Unit VCEsat 0.25 0.4 V CIO 0.6 pF Current Transfer Ratio Current Transfer Ratio and Collector-Emitter Leakage Current by Dash Number Parameter IC/IF at VCE = 5.0 V Test condition IF = 10 mA IF = 1.0 mA Document Number 83663 Rev. 1.4, 26-Oct-04 Part Symbol Min Max Unit SFH601-1 CTR 40 Typ. 80 % SFH601-2 CTR 63 125 % SFH601-3 CTR 100 200 % 320 % SFH601-4 CTR 160 SFH601-1 CTR 13 30 % SFH601-2 CTR 22 45 % SFH601-3 CTR 34 70 % SFH601-4 CTR 56 90 % www.vishay.com 3 SFH601 VISHAY Vishay Semiconductors Switching Non-saturated Parameter Current Rise time Fall time Turn-on time Turn-off time tf ton toff µs µs 2.0 3.0 2.3 Fall time Tutn-on time Turn-off time ton toff VCC = 5.0 V, RL = 75 Ω Test condition Symbol IF tr Unit mA µs 10 2.0 Current Rise time Switching Saturated Parameter Test condition VCEsat = 0.25 (≤ 0.4) V Symbol IF tr tf Unit mA µs µs µs µs SFH601-1 20 2.0 11 3.0 18 SFH601-2 10 3.0 14 4.2 23 SFH601-3 10 3.0 14 4.2 23 SFH601-4 0.5 4.6 15 6.0 25 Typical Characteristics (Tamb = 25 °C unless otherwise specified) (TA = –25°C, VCE = 5.0 V) IC/IF = f (IF) IF RL = 75 Ω IC VCC = 5 V 47 Ω isfh600_03 isfh601_01 Figure 1. Linear Operation ( without Saturation) Figure 3. Current Transfer Ratio vs. Diode Current DC Pulsbetrieb Pulse IF (TA = 0°C, VCE = 5.0 V) IC/IF = f (IF) 1 KΩ VCC = 5 V 47 Ω isfh601_02 isfh601_04 Figure 2. Switching Operation (with Saturation) www.vishay.com 4 Figure 4. Current Transfer Ratio vs. Diode Current Document Number 83663 Rev. 1.4, 26-Oct-04 SFH601 VISHAY Vishay Semiconductors DC Pulsbetrieb Pulse DC Pulsbetrieb Pulse (VCE = 5.0 V) IC/IF = f (IF) (IF = 10 mA, VCE = 5.0 V) IC/IF = f (T) isfh601_05 isfh601_08 Figure 8. Current Transfer Ratio vs. Diode Current Figure 5. Current Transfer Ratio vs. Diode Current DC Pulsbetrieb Pulse DC Pulsbetrieb Pulse (TA = 50°C, VCE = 5.0 V) IC/IF = f (IF) IC = f (VCE) (IF = 0) isfh601_06 isfh601_09 Figure 9. Transistor Characteristics Figure 6. Current Transfer Ratio vs. Diode Current DC Pulsbetrieb Pulse DC Pulsbetrieb Pulse (TA = 75°C, VCE = 5.0 V) IC/IF = f (IF) IC=f(VCE) isfh601_07 isfh601_10 Figure 7. Current Transfer Ratio vs. Diode Current Document Number 83663 Rev. 1.4, 26-Oct-04 Figure 10. Output Characteristics www.vishay.com 5 SFH601 VISHAY Vishay Semiconductors VF = f (IF) VCEsat = f (IC) isfh601_11 isfh601_14 Figure 11. Forward Voltage Figure 14. Saturation Voltage vs. Collector Current and Modulation Depth SFH601-2 ICEO = f (V,T) (IF = 0) VCEsat = f (IC) isfh601_15 isfh601_12 Figure 12. Collector-Emitter Off-state Current Figure 15. Saturation Voltage vs. Collector Current and Modulation Depth SFH601-3 VCEsat VCEsat = f (IC) VCEsat = f (IC) mA isfh601_13 Figure 13. Saturation Voltage vs. Collector Current and Modulation Depth SFH601-1 www.vishay.com 6 isfh601_16 Figure 16. Saturation Voltage vs. Collector Current and Modulation Depth SFH601-4 Document Number 83663 Rev. 1.4, 26-Oct-04 SFH601 VISHAY Vishay Semiconductors D = parameter, IF = f (tp) isfh601_17 Figure 17. Permissible Pulse Load Ptot = f (TA) isfh601_18 Figure 18. Permissible Power Dissipation for Transistor and Diode Ptot = f (TA) isfh601_19 Figure 19. Permissible Forward Current Diode Document Number 83663 Rev. 1.4, 26-Oct-04 www.vishay.com 7 SFH601 VISHAY Vishay Semiconductors Package Dimensions in Inches (mm) 3 2 1 4 5 6 pin one ID .248 (6.30) .256 (6.50) ISO Method A .335 (8.50) .343 (8.70) .300 (7.62) typ. .048 (0.45) .022 (0.55) .039 (1.00) Min. .130 (3.30) .150 (3.81) 18° 4° typ. .031 (0.80) min. .031 (0.80) .035 (0.90) .018 (0.45) .022 (0.55) .100 (2.54) typ. 3°–9° .114 (2.90) .130 (3.0) .010 (.25) typ. .300–.347 (7.62–8.81) i178004 Option 6 Option 7 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .300 (7.62) TYP. Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) www.vishay.com 8 .331 (8.4) MIN. .406 (10.3) MAX. .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15° max. 18450 Document Number 83663 Rev. 1.4, 26-Oct-04 SFH601 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83663 Rev. 1.4, 26-Oct-04 www.vishay.com 9