H11B1/ H11B2/ H11B3 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, With Base Connection Features • • • • Isolation test voltage, 5300 VRMS Coupling capacitance, 0.5 pF Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A 1 6 B C 2 5 C NC 3 4 E Agency Approvals e3 • UL1577, File No. E52744 System Code J i179005 Pb Pb-free Order Information • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 Part Description The H11B1/ H11B2/ H11B3 are industry standard optocouplers, consisting of a gallium arsenide infrared LED and a silicon photodarlington. Remarks H11B1 CTR > 500 %, DIP-6 H11B2 CTR > 200 %, DIP-6 H11B3 CTR > 100 %, DIP-6 H11B1-X007 CTR > 500 %, SMD-6 (option 7) H11B1-X009 CTR > 500 %, SMD-6 (option 9) H11B2-X009 CTR > 200 %, SMD-6 (option 9) For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Reverse voltage Parameter Test condition VR 3.0 V Forward continuous current IF 60 mA Pdiss 100 mW 1.33 mW/°C Power dissipation Derate linearly from 25 °C Unit Output Symbol Value Unit Collector-emitter breakdown voltage Parameter BVCEO 25 V Emitter-collector breakdown voltage BVECO 7.0 V Collector-base breakdown voltage BVCBO 30 V Document Number 83609 Rev. 1.5, 26-Oct-04 Test condition www.vishay.com 1 H11B1/ H11B2/ H11B3 Vishay Semiconductors Parameter Test condition Symbol Value IC 100 mA Pdiss 150 mW 2.0 mW/°C Collector current (continuous) Power dissipation Derate linearly from 25 °C Unit Coupler Parameter Isolation test voltage Test condition Symbol Value Unit VISO 5300 VRMS between emitter and detector, refer to standard climate 23 °C/50 %RH, DIN 50014 Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Comparative tracking index per DIN IEC 112/VDE 0303, part 1 175 Ω VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Ptot 260 mW 3.5 mW/°C Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C 10 sec. Isolation resistance Total package dissipation (LED plus detector) Derate linearly from 25 °C Lead soldering time at 260 °C Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Test condition IF = 50 mA IF = 10 mA Part Symbol Typ. Max Unit H11B1 VF 1.1 1.5 V H11B2 VF 1.1 1.5 V H11B3 VF 1.1 1.5 V 10 µA Reserve current VR = 3.0 V IR Junction capacitance VF = 0 V, f = 1.0 mHz Cj Min 50 pF Output Test condition Symbol Min Collector-emitter breakdown voltage Parameter IC = 1.0 mA, IF = 0 mA BVCEO 30 V Emitter-collector breakdown voltage IE = 100 µA, IF = 0 mA BVECO 7.0 V Collector-base breakdown voltage IC = 100 µA, IF = 0 mA BVCBO 30 V Collector-emitter leakage current VCE = 10 V, IF = 0 mA ICEO www.vishay.com 2 Typ. Max 100 Unit nA Document Number 83609 Rev. 1.5, 26-Oct-04 H11B1/ H11B2/ H11B3 Vishay Semiconductors Coupler Parameter Test condition Saturation voltage collectoremitter IC = 1.0 mA, IC = 1.0 mA Capacitance (input-output) Symbol Min Typ. VCEsat Max Unit 1.0 V 0.5 CIO pF Current Transfer Ratio Parameter Test condition DC Current Transfer Ratio VCE = 5.0 V, IF = 1.0 mA Part Symbol Min H11B1 CTRDC 500 Typ. Max Unit % H11B2 CTRDC 200 % H11B3 CTRDC 100 % Switching Characteristics Parameter Switching times Test condition Symbol IF = 5.0 mA, VCE = 10 V, RL = 100 Ω Min Typ. Max Unit ton 5.0 µs toff 30 µs Typical Characteristics (Tamb = 25 °C unless otherwise specified) 4.0 1. 3 NCTRce - Normalized CTRce VF - Forward Voltage - V 1.4 Ta = -55°C 1.2 Ta = 25°C 1.1 1.0 0.9 Ta = 100°C 0.8 3.5 3.0 2.5 2.0 .1 1 10 IF - Forward Current - mA 100 ih11b1_01 Vce = 5 V 1.5 1.0 0.5 0.0 .1 0.7 Normalized to: Vce = 5 V IF = 1 mA Vce = 1 V 1 10 100 IF - LED Current - mA ih11b1_02 Figure 1. Forward Voltage vs. Forward Current Document Number 83609 Rev. 1.5, 26-Oct-04 Figure 2. Normalized Non-Saturated and Saturated CTRCE vs. LED Current www.vishay.com 3 H11B1/ H11B2/ H11B3 Vishay Semiconductors Normalized to: 80 Vce = 5 V tpLH - Low/High Propagation Delay - µS 100 NIce - Normalized Ice Vce = 5 V 10 IF = 2 mA Vce = 1V 1 .1 .01 10 1 IF - LED Current - mA .1 1.0 kΩ 60 220 ıΩˇ 40 470 Ω 20 100 Ω 0 100 0 5 10 15 20 IF - LED Current - mA ih11b1_03 ih11b1_06 Figure 3. Normalized Non-Saturated and Saturated ICE vs. LED Current Normalized to: 20 Vce = 5 V IF = 10 mA Vce = 5 V 1 Vce = 1V .1 .01 .001 .1 Figure 6. Low to High Propagation Delay vs. Collector Load Resistance and LED Current tpHL - High/Low Propagation delay - µs 10 NIce - Normalized Ice Vcc = 5V Vth = 1.5 V 10 1 IF - LED Current - mA 100 1kΩ Vcc = 5 V 15 Vth = 1.5 V 10 100Ω 5 0 0 5 10 15 20 IF - LED Current - mA ih11b1_04 ih11b1_07 Figure 4. Normalized Non-Saturated and Saturated CollectorEmitter Current vs. LED Current Figure 7. High to low Propagation Delay vs. Collector Load Resistance and LED Current HFE - Forward Transfer Gain 10000 Vce = 5 V 8000 IF 6000 4000 Vce = 1 V 2000 0 .01 VO tD tR tPLH VTH = 1.5 V .1 1 10 tPHL 100 tS tF Ib - Base Current - µA ih11b1_05 Figure 5. Non-Saturated and Saturated HFE vs. Base Current www.vishay.com 4 ih11b1_08 Figure 8. Switching Waveform Document Number 83609 Rev. 1.5, 26-Oct-04 H11B1/ H11B2/ H11B3 Vishay Semiconductors Figure 9. Switching Schematic VCC = 10 V F=10 KHz, DF=50% RL VO IF =5 mA ih11b1_09 Package Dimensions in Inches (mm) 3 2 1 4 5 6 pin one ID .248 (6.30) .256 (6.50) ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4° typ. .018 (0.45) .022 (0.55) .300 (7.62) typ. .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) 18° .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3°–9° .114 (2.90) .130 (3.0) .010 (.25) typ. .300–.347 (7.62–8.81) i178004 Document Number 83609 Rev. 1.5, 26-Oct-04 www.vishay.com 5 H11B1/ H11B2/ H11B3 Vishay Semiconductors Option 7 Option 9 .375 (9.53) .395 (10.03) .300 (7.62) TYP. .300 (7.62) ref. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .331 (8.4) MIN. .406 (10.3) MAX. www.vishay.com 6 .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15° max. 18494 Document Number 83609 Rev. 1.5, 26-Oct-04 H11B1/ H11B2/ H11B3 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83609 Rev. 1.5, 26-Oct-04 www.vishay.com 7