IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRLZ44L/SiHLZ44L) is available for low-profile applications. D2PAK (TO-263) G G Available RoHS* DESCRIPTION D I2PAK (TO-262) Advanced Process Technology Surface Mount (IRLZ14S/SiHLZ14S) Low-Profile Through-Hole (IRLZ14L/SiHLZ14L) 175 °C Operating Temperature Fast Switching Lead (Pb)-free Available D S S N-Channel MOSFET ORDERING INFORMATION D2PAK (TO-263) IRLZ14SPbF SiHLZ14S-E3 IRLZ14S SiHLZ14S Package Lead (Pb)-free SnPb D2PAK (TO-263) IRLZ14STRRPbFa SiHLZ14STR-E3a IRLZ14TRRa SiHLZ14TRa I2PAK (TO-262) IRLZ14L SiHLZ14L Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT VDS VGS 60 ± 10 10 7.2 40 0.29 68 43 3.7 4.5 - 55 to + 175 300d Drain-Source Voltagee Gate-Source Voltage Continuous Drain Current VGS at 5 V TC = 25 °C TC = 100 °C Currenta, e IDM Pulsed Drain Linear Derating Factor Single Pulse Avalanche Energyb, e Maximum Power Dissipation ID EAS TC = 25 °C TA = 25 °C dV/dtc, e PD dV/dt Peak Diode Recovery Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 790 µH, RG = 25 Ω, IAS = 10 A (see fig. 12). c. ISD ≤ 10 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. e. Uses IRLZ14/SiHLZ14 data and test conditions. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 90414 S-Pending-Rev. A, 21-Jul-08 WORK-IN-PROGRESS UNIT V A W/°C mJ W V/ns °C www.vishay.com 1 IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL TYP. MAX. Maximum Junction-to-Ambient (PCB Mount)a PARAMETER RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 3.5 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 µA 60 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.07 - V/°C VGS(th) VDS = VGS, ID = 250 µA 1.0 - 2.0 V Gate-Source Leakage IGSS VGS = ± 10 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V - - 25 VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs VGS = 5 V ID = 6.0 Ab - - 0.2 VGS = 4 V Ab - - 0.28 3.5 - - - 400 - - 170 - - 42 - ID = 5.0 VDS = 25 V, ID = 6.0 A µA Ω S Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 5 V ID = 10 A, VDS = 48 V, see fig. 6 and 13b - - 8.4 - - 3.5 pF nC Gate-Drain Charge Qgd - - 6.0 Turn-On Delay Time td(on) - 9.3 - - 110 - - 17 - - 26 - - 7.5 - - - 10 - - 40 - - 1.6 - 93 130 ns - 340 650 nC Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Internal Source Inductance LS VDD = 30 V, ID = 10 A, RG = 12 Ω, RD = 2.8 Ω, see fig. 10b Between lead, and center of die contact ns nH Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 10 A, VGS = 0 Vb TJ = 25 °C, IF = 10 A, dI/dt = 100 A/µsb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 90414 S-Pending-Rev. A, 21-Jul-08 IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 90414 S-Pending-Rev. A, 21-Jul-08 www.vishay.com 3 IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 90414 S-Pending-Rev. A, 21-Jul-08 IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix RD VDS VGS D.U.T. RG + - VDD 5V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature tr td(off) tf Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 90414 S-Pending-Rev. A, 21-Jul-08 www.vishay.com 5 IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix L VDS VDS Vary tp to obtain required IAS tp VDD D.U.T. RG + - I AS V DD VDS 5V 0.01 Ω tp Fig. 12a - Unclamped Inductive Test Circuit IAS Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG VGS 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 90414 S-Pending-Rev. A, 21-Jul-08 IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?90414. Document Number: 90414 S-Pending-Rev. A, 21-Jul-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1