IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Single S I2PAK (TO-262) Available RoHS* COMPLIANT DESCRIPTION D2PAK (TO-263) Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IR9Z24L/SiH9Z24L) is available for low-profile applications. G G Advanced Process Technology Surface Mount (IRF9Z24S/SiHF9Z24S) Low-Profile Through-Hole (IRF9Z24L/SiHF9Z24L) 175 °C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead (Pb)-free Available D S D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) IRF9Z24SPbF IRF9Z24STRLPbFa IRF9Z24STRRPbFa IRF9Z24LPbF SiHF9Z24S-E3 SiHF9Z24STL-E3a SiHF9Z24STR-E3a SiHF9Z24L-E3 IRF9Z24S IRF9Z24STRLa IRF9Z24STRRa IRF9Z24L SiHF9Z24S SiHF9Z24STLa SiHF9Z24STRa SiHF9Z24L Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Currente Pulsed Drain VGS at - 10 V TC = 25 °C TC = 100 °C Currenta, e ID IDM Linear Derating Factor Single Pulse Avalanche Energyb, e UNIT V - 11 - 7.7 A - 44 0.40 W/°C EAS 240 mJ Repetitive Avalanche Currenta IAR - 11 A Energya EAR 6.0 mJ Repetitive Avalanche * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91091 S-Pending-Rev. A, 03-Jun-08 WORK-IN-PROGRESS www.vishay.com 1 IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL TA = 25 °C Maximum Power Dissipation LIMIT UNIT 3.7 W 60 W V/ns PD TC = 25 °C dV/dtc, e dV/dt - 4.5 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 Peak Diode Recovery Soldering Recommendations (Peak Temperature) °C 300d for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 2.3 mH, RG = 25 Ω, IAS = - 11 A (see fig. 12). c. ISD ≤ - 11 A, dI/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. e. Uses IRF9Z24/SiHF9Z24 data and test conditions. THERMAL RESISTANCE RATINGS SYMBOL MIN. TYP. MAX. Maximum Junction-to-Ambient (PCB Mount)a PARAMETER RthJA - - 40 Maximum Junction-to-Case (Drain) RthJC - - 2.5 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS VDS VGS = 0 V, ID = - 250 µA MIN. TYP. MAX. UNIT - 60 - - V - - 0.056 - V/°C - 2.0 - - 4.0 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance ΔVDS/TJ VGS(th) Reference to 25 °C, ID = - 1 VDS = VGS, ID = - 250 µA VGS = ± 20 V - - ± 100 VDS = - 60 V, VGS = 0 V - - - 100 VDS = - 48 V, VGS = 0 V, TJ = 150 °C - - - 500 IGSS IDSS RDS(on) gfs mAc µA - - 0.28 Ω VDS = - 25 V, ID = - 6.6 Ac 1.4 - - S VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5c - 570 - - 360 - - 65 - - - 19 ID = - 6.6 Ab VGS = - 10 V Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs - - 5.4 Gate-Drain Charge Qgd - - 11 Turn-On Delay Time td(on) - 13 - - 68 - - 15 - - 29 - - - - 11 S - - - 44 TJ = 25 °C, IS = - 11 A, VGS = 0 Vb - - - 6.3 Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = - 10 V ID = - 11 A, VDS = - 480 V, see fig. 6 and 13b, c VDD = - 30 V, ID = - 11 A, RG = 18 Ω, RD = 2.5 Ω, see fig. 10b tf pF nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD www.vishay.com 2 MOSFET symbol showing the integral reverse p - n junction diode D A G V Document Number: 91091 S-Pending-Rev. A, 03-Jun-08 IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT - 100 200 ns - 320 640 nC Drain-Source Body Diode Characteristics Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton TJ = 25 °C, IF = -11 A, dI/dt = 100 A/µsb, c Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Uses IRF9Z24/SiHF9Z24 data and test conditions. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Output Characteristics Document Number: 91091 S-Pending-Rev. A, 03-Jun-08 Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 91091 S-Pending-Rev. A, 03-Jun-08 IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L Vishay Siliconix RD VDS VGS D.U.T. RG +VDD - 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit td(on) tr td(off) tf VGS 10 % 90 % VDS Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91091 S-Pending-Rev. A, 03-Jun-08 www.vishay.com 5 IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L Vishay Siliconix L Vary tp to obtain required IAS IAS VDS VDS D.U.T. RG + V DD VDD IAS tp - 10 V 0.01 Ω tp VDS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG - 10 V 12 V 0.2 µF 0.3 µF QGS - QGD D.U.T. VG + VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91091 S-Pending-Rev. A, 03-Jun-08 IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG + • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test + - VDD Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % * ISD VGS = - 5 V for logic level and - 3 V drive devices Fig. 14 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91091. Document Number: 91091 S-Pending-Rev. A, 03-Jun-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1