IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 4.4 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 8.9 Configuration Single (TO-262) D2PAK RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC20L/SiHFBC20L) is a available for low-profile applications. (TO-263) G G Available DESCRIPTION D I2PAK Surface Mount (IRFBC20S/SiHFBC20S) Low-Profile Through-Hole (IRFBC20L/SiHFBC20L) Available in Tape and Reel (IRFBC20S/SiHFBC20S) Dynamic dV/dt Rating 150 °C Operating Temperature Fast Switching Fully Avalanche Rated Lead (Pb)-free Available D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) IRFBC20SPbF SiHFBC20S-E3 IRFBC20S SiHFBC20S IRFBC20STRLPbFa SiHFBC20STL-E3a IRFBC20STRLa SiHFBC20STLa IRFBC20LPbF SiHFBC20L-E3 IRFBC20L SiHFBC20L Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL VDS VGS Continuous Drain Currente VGS at 10 V TC = 25 °C TC = 100 °C Currenta, e Pulsed Drain Linear Derating Factor Single Pulse Avalanche Energyb, e Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery ID IDM EAS IAR EAR TA = 25 °C TC = 25 °C dV/dtc, e PD dV/dt Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 31 mH, RG = 25 Ω, IAS = 2.2 A (see fig. 12). c. ISD ≤ 2.2 A, dI/dt ≤ 40 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. Uses IRFBC20/SiHFBC20 data and test conditions. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91107 S-Pending-Rev. A, 03-Jun-08 WORK-IN-PROGRESS LIMIT 600 ± 20 2.2 1.4 8.0 0.40 84 2.2 5.0 3.1 50 3.0 - 55 to + 150 300d UNIT V A W/°C mJ A mJ W V/ns °C www.vishay.com 1 IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL TYP. MAX. Maximum Junction-to-Ambient (PCB Mounted, steady-state)a PARAMETER RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 2.5 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 µA 600 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mAc - 0.88 - V/°C VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 100 VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 500 Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = 1.3 Ab VGS = 10 V VDS = 50 V, ID = 1.3 Ac µA - - 4.4 Ω 1.4 - - S - 350 - - 48 - - 8.6 - - - 18 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs - - 3.0 Gate-Drain Charge Qgd - - 8.9 Turn-On Delay Time td(on) - 10 - tr - 23 - - 30 - - 25 - - 7.5 - - - 2.2 - - 8.0 - - 1.6 - 290 580 ns - 0.67 1.3 µC Rise Time Turn-Off Delay Time td(off) Fall Time tf Internal Source Inductance LS VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5c VGS = 10 V ID = 2.0 A, VDS = 360 V, see fig. 6 and 13b, c VDD = 300 V, ID = 2.0 A, RG = 18 Ω, RD = 150 Ω, see fig. 10b, c Between lead, and center of die contact pF nC ns nH Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 2.2 A, VGS = 0 Vb TJ = 25 °C, IF = 2.0 A, dI/dt = 100 A/µsb, c V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Uses IRFBC20/SiHFBC20 data and test conditions. www.vishay.com 2 Document Number: 91107 S-Pending-Rev. A, 03-Jun-08 IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91107 S-Pending-Rev. A, 03-Jun-08 www.vishay.com 3 IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 91107 S-Pending-Rev. A, 03-Jun-08 IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS VDS VDS tp D.U.T. RG VDD + - I AS V DD VDS 10 V tp 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91107 S-Pending-Rev. A, 03-Jun-08 IAS Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91107 S-Pending-Rev. A, 03-Jun-08 IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91107. Document Number: 91107 S-Pending-Rev. A, 03-Jun-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1