FAIRCHILD BS270

April 1995
BS270
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 500mA DC. These products are
particularly suited for low voltage, low current applications such
as small servo motor control, power MOSFET gate drivers,
and other switching applications.
400mA, 60V. RDS(ON) = 2Ω @ VGS = 10V.
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
T A = 25°C unless otherwise noted
BS270
Units
Drain-Source Voltage
60
V
VDGR
Drain-Gate Voltage (RGS < 1MΩ)
60
V
VGSS
Gate-Source Voltage - Continuous
±20
V
- Non Repetitive (tp < 50µs)
ID
Drain Current - Continuous
PD
Maximum Power Dissipation
- Pulsed
Derate Above 25°C
±40
400
mA
2000
625
mW
5
mW/°C
TJ,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
TL
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300
°C
200
°C/W
THERMAL CHARACTERISTICS
RθJA
Thermal Resistacne, Junction-to-Ambient
© 1997 Fairchild Semiconductor Corporation
BS270.SAM
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 10 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
60
V
TJ = 125oC
1
µA
500
µA
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
10
nA
IGSSF
Gate - Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
-10
nA
2.5
V
1.2
2
Ω
2
3.5
VGS = 4.5 V, ID = 75 mA
1.8
3
VGS = 10 V, ID = 500 mA
0.6
1
0.14
0.225
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 500 mA
1
TJ = 125oC
VDS(ON)
Drain-Source On-Voltage
ID(ON)
On-State Drain Current
gFS
Forward Transconductance
VGS = 4.5 V, ID = 75 mA
VGS = 10 V, VDS > 2 VDS(on)
2000
2.1
2700
VGS = 4.5 V, VDS > 2 VDS(on)
400
600
VDS > 2 VDS(on), ID = 200 mA
100
320
V
mA
mS
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
20
50
pF
11
25
pF
4
5
pF
10
ns
10
ns
400
mA
2000
mA
1.2
V
SWITCHING CHARACTERISTICS (Note 1)
ton
Turn-On Time
toff
Turn-Off Time
VDD = 30 V, ID = 500 m A,
VGS = 10 V, RGEN = 25 Ω
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 400 mA (Note 1)
0.88
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
BS270.SAM
Typical Electrical Characteristics
2
3
9.0
V GS =4.0V
8.0
, DRAIN-SOURCE CURRENT (A)
7.0
RDS(on) , NORMALIZED
1.5
6.0
1
5.0
0.5
I
D
4.0
DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
3.0
0
0
1
2
3
V DS , DRAIN-SOURCE VOLTAGE (V)
4
5.0
6 .0
2
7.0
8.0
1.5
9.0
10
1
0.5
5
0
0.8
1.2
I D , DRAIN CURRENT (A)
1.6
2
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current.
2
3
1.75
V GS = 10V
R DS(on) , NORMALIZED
ID = 500mA
1.5
1.25
1
0.75
0.5
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
DRAIN-SOURCE ON-RESISTANCE
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0.4
Figure 1. On-Region Characteristics.
V G S = 10V
2.5
TJ = 125°C
2
1.5
25°C
1
-55°C
0.5
0
150
0
Figure 3. On-Resistance Variation
with Temperature.
0.4
0.8
1.2
I D , DRAIN CURRENT (A)
1.6
2
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
1.1
VDS = 10V
T J = -55°C
25°C
125°C
Vth , NORMALIZED
1.6
1.2
0.8
0.4
0
0
2
V
GS
4
6
8
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
10
GATE-SOURCE THRESHOLD VOLTAGE
2
ID , DRAIN CURRENT (A)
4.5
2.5
V DS = VGS
I D = 1 mA
1.05
1
0.95
0.9
0.85
0.8
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
150
Figure 6. Gate Threshold Variation with
Temperature.
BS270.SAM
Typical Electrical Characteristics (continued)
2
ID = 10µA
1.05
1.025
1
0.975
0.95
0.925
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
0.5
TJ = 125°C
0.1
25°C
0.05
-55°C
0.01
0.005
0.001
0.2
150
0.4
0.6
V SD
0.8
1
1.2
1.4
, BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Body Diode Forward Voltage Variation with
Current and Temperature.
Figure 7. Breakdown Voltage Variation
with Temperature.
10
60
40
V GS , GATE-SOURCE VOLTAGE (V)
20
C oss
10
5
C rss
f = 1 MHz
V GS = 0V
2
V DS = 25V
ID = 5 0 0 m A
C iss
CAPACITANCE (pF)
V GS = 0V
1
1.075
IS , REVERSE DRAIN CURRENT (A)
, NORMALIZED
DSS
BV
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.1
1
8
6
4
2
0
1
2
3
V DS
5
10
20
30
50
0
0.4
0.8
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Capacitance Characteristics.
t on
t d(on)
R GEN
t d(off)
tf
90%
90%
V OUT
Output, Vout
10%
10%
90%
DUT
G
Input, Vin
S
Figure 11. Switching Test Circuit.
2
t off
tr
RL
D
VGS
1.6
Figure 10. Gate Charge Characteristics.
VDD
V IN
1.2
Q g , GATE CHARGE (nC)
Inverted
50%
50%
10%
Pulse Width
Figure 12. Switching Waveforms.
BS270.SAM
Typical Electrical Characteristics (continued)
3
2
I D , DRAIN CURRENT (A)
1
RD
S(
ON
im
)L
10
it
1m
0.5
0u
s
s
10
ms
10
0m
s
1s
0.1
10
s
DC
0.05
V GS = 10V
SINGLE PULSE
T A = 25°C
0.01
0.005
1
2
5
10
20
30
V DS , DRAIN-SOURCE VOLTAGE (V)
60 80
Figure 13. Maximum Safe Operating
Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
D = 0.5
0.1
R θJA (t) = r(t) * R θJA
0.2
0.2
R
θJA = (See Datasheet)
0.1
P(pk)
0.05
0.05
t1
0.02
0.02
0.01
0.0001
Single Pulse
0.001
t2
TJ - T A = P * Rθ
JA (t)
Duty Cycle, D = t1 /t2
0.01
0.01
0.1
t 1, TIME (sec)
1
10
100
300
Figure 14. Transient Thermal Response Curve.
BS270.SAM
TO-92 Tape and Reel Data and Package Dimensions
TO-92 Packaging
Configuration: Figure 1.0
TAPE and REEL OPTION
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION
LOT:
NSID:
D/C1:
CBVK741B019
QTY:
PN2222N
See Fig 2.0 for various
Reeling Styles
HTB:B
10000
SPEC:
D9842
SPEC REV:
FSCINT
Label
B2
QA REV:
5 Reels per
Intermediate Box
(FSCINT)
Customized
Label
F63TNR Label sample
LOT: CBVK741B019
QTY: 2000
FSID: PN222N
SPEC:
D/C1: D9842
D/C2:
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F63TNR
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Customized
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375mm x 267mm x 375mm
Intermediate Box
TO-92 TNR/AMMO PACKING INFORMATION
Packing
Style
Quantity
EOL code
Reel
A
2,000
D26Z
B
2,000
D11Z
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2,000
D28Z
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2,000
D10Z
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2,000
D27Z
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2,000
D81Z
G
2,000
D29Z
H
2,000
D89Z
M
2,000
D74Z
P
2,000
D75Z
Unit weight
Reel weight with components
Ammo weight with components
Max quantity per intermediate box
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Ammo
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
FSCINT
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327mm x 158mm x 135mm
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(TO-92) BULK PACKING INFORMATION
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TO-18 OPTION STD
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2.0 K / BOX
J22Z
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3.5 K / BOX
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TO-18 OPTION STD
0.150 “ - 0.180 “
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TO-18 OPTION REVERSE
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TO-18 OPTION REVERSE
0.120 ” - 0.150 “
3.5 K / BOX
TO-18 OPTION REVERSE
0.150 “ - 0.180 “
3.0 K / BOX
J05Z
TO-5 OPTION STD
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1.5 K / BOX
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0.120 ” - 0.150 “
3.5 K / BOX
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TO-5 OPTION STD
0.150 “ - 0.180 “
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J60Z
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0.120 ” - 0.150 “
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IN LINE 0.200 SPACING
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2.0 K / BOX
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TO-92 STANDARD
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( FOR PKG 97 AND 98 )
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EMITTER LEAD CUT
J21Z
CENTER LEAD CUT
JO5A
JO5B
JO5C
MICROSOFT LEADFORM
REQ'T
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MICROSOFT LEADFORM
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0.028 “ MAX
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0.028 “ MAX
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Customized
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333mm x 231mm x 183mm
Intermediate Box
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5 Ammo boxes per
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2000 units per
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November 1998, Rev. A
TO-92 Tape and Reel Data and Package Dimensions, continued
TO-92 Reeling Style
Configuration: Figure 2.0
Machine Option “A” (H)
Machine Option “E” (J)
Style “A”, D26Z, D70Z (s/h)
Style “E”, D27Z, D71Z (s/h)
Style “B”, D11Z
Style “F”, D81Z
Style “C”, D28Z, D72Z (s/h)
Style “G”, D29Z, D73Z (s/h)
Style “D”, D10Z
Style “H”, D89Z
TO-92 Radial Ammo Packaging
Configuration: Figure 3.0
FIRST WIRE OFF IS COLLECTOR
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP
ORDER STYLE
D74Z (M)
FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON BOTTOM SIDE
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FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON THE TOP SIDE
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ORDER STYLE
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FIRST WIRE OFF IS COLLECTOR
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FLAT OF TRANSISTOR IS ON TOP
November 1998, Rev. A
TO-92 Tape and Reel Data and Package Dimensions, continued
TO-92 Tape and Reel Taping
Dimension Configuration: Figure 4.0
Hd
P
Pd
b
Ha
W1
d
L
H1 HO
L1
S
WO
t
W2
W
t1
P1 F1
DO
P2
PO
User Direction of Feed
TO-92 Reel
Configuration: Figure 5.0
ITEM DESCRIPTION
SYMBOL
DIMENSION
Base of Package to Lead Bend
b
0.098 (max)
Component Height
Ha
0.928 (+/- 0.025)
Lead Clinch Height
HO
0.630 (+/- 0.020)
Component Base Height
H1
0.748 (+/- 0.020)
Component Alignment ( side/side )
Pd
0.040 (max)
Component Alignment ( front/back )
Hd
0.031 (max)
Component Pitch
P
0.500 (+/- 0.020)
Feed Hole Pitch
PO
0.500 (+/- 0.008)
Hole Center to First Lead
P1
0.150 (+0.009, -0.010)
Hole Center to Component Center
P2
0.247 (+/- 0.007)
Lead Spread
F1/F2
0.104 (+/- 0 .010)
Lead Thickness
d
0.018 (+0.002, -0.003)
Cut Lead Length
L
0.429 (max)
Taped Lead Length
L1
0.209 (+0.051, -0.052)
Taped Lead Thickness
t
0.032 (+/- 0.006)
Carrier Tape Thickness
t1
0.021 (+/- 0.006)
Carrier Tape Width
W
0.708 (+0.020, -0.019)
Hold - down Tape Width
WO
0.236 (+/- 0.012)
Hold - down Tape position
W1
0.035 (max)
Feed Hole Position
W2
0.360 (+/- 0.025)
Sprocket Hole Diameter
DO
0.157 (+0.008, -0.007)
Lead Spring Out
S
0.004 (max)
Note : All dimensions are in inches.
ELECTROSTATIC
SENSITIVE DEVICES
D4
D1
D2
F63TNR Label
ITEM DESCRIPTION
SYSMBOL
MINIMUM
MAXIMUM
Reel Diameter
D1
13.975
14.025
Arbor Hole Diameter (Standard)
D2
1.160
1.200
D2
0.650
0.700
Core Diameter
D3
3.100
3.300
Hub Recess Inner Diameter
D4
2.700
3.100
Hub Recess Depth
W1
0.370
0.570
Flange to Flange Inner Width
W2
1.630
Hub to Hub Center Width
W3
Customized Label
(Small Hole)
W1
1.690
2.090
W3
W2
Note: All dimensions are inches
D3
November 1998, Rev. A
TO-92 Tape and Reel Data and Package Dimensions, continued
TO-92; TO-18 Lead Form STD
(FS PKG Code 97)
1:1
Scale 1:1 on letter size paper
Part Weight per unit (gram): 0.2201
September 1998, Rev. A
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
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This datasheet contains final specifications. Fairchild
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.