Order this document by 2N6576/D SEMICONDUCTOR TECHNICAL DATA General–purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • • • Replacement for 2N3055 and Driver High Gain Darlington Performance Built–in Diode Protection for Reverse Polarity Protection Can Be Driven from Low–Level Logic Popular Voltage Range Operating Range — –65 to + 200_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 15 AMPERE POWER TRANSISTORS NPN SILICON DARLINGTON 60, 90, 120 VOLTS 120 WATTS MAXIMUM RATINGS (1) Rating Symbol 2N6576 2N6577 2N6578 Unit VCEO(sus) 60 90 120 Vdc Collector–Base Voltage VCB 60 90 120 Vdc Emitter–Base Voltage VEB 7.0 Vdc Collector Current — Continuous — Peak IC 15 30 Adc Base Current — Continuous — Peak IB 0.25 0.50 Adc Emitter Current — Continuous — Peak IE 15.25 30.5 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 120 0.685 Watts W/_C – 65 to + 200 _C Symbol Max Unit RθJC 1.46 _C/W TL 265 _C Collector–Emitter Voltage Operating and Storage Junction Temperature Range TJ, Tstg CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: 1/16″ from Case for 10s. (1) Indicates JEDEC Registered Data. DARLINGTON SCHEMATIC COLLECTOR BASE [4k [ 50 EMITTER REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v v *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 60 90 120 — — — Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) VCEO(sus) 2N6576 2N6577 2N6578 Vdc Collector Cutoff Current (VCE = Rated Value) ICEO — 1.0 mAdc Collector Cutoff Current (VCER = Rated VCEO(sus) Value, RBE = 10 kΩ, TC = 150_C) ICER — 5.0 mAdc Collector Cutoff Current VCEX = Rated VCEO(sus) Value, VBE(off) = 1.5 Vdc) ICEV — 5.0 mAdc Collector Cutoff Current (VCB = Rated Value) ICBO — 0.5 mAdc 100 500 2000 200 — 5,000 20,000 — — — 4.0 2.8 — — 4.5 3.5 VF — 4.5 Vdc |hfe| 10 200 — td — 0.15 µs ON CHARACTERISTICS DC Current Gain (IC = 15 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) (IC = 0.4 Adc, VCE = 3.0 Vdc) hFE Collector–Emitter Saturation Voltage (IC = 15 Adc, IB = 0.15 Adc) (IC = 10 Adc, IB = 0.1 Adc) VCE(sat) Base–Emitter Saturation Voltage (IC = 15 Adc, IB = 0.15 Adc) (IC = 10 Adc, IB = 0.1 Adc) VBE(sat) Collector–Emitter Diode Voltage Drop (IEC = 15 Adc) — Vdc Vdc DYNAMIC CHARACTERISTICS Magnitude of Common–Emitter Small–Signal Short–Circuit Current Transfer Ratio (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) SWITCHING CHARACTERISTICS RESISTIVE LOAD (Figure 2) Delay Time (VCC = 30 Vdc, IC = 10 Adc, IB1 = 0.1 Adc, tp = 300 µs, Duty Cycle 2.0%) Rise Time Storage Time (VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 0.1 Adc, tp = 300 µs, Duty Cycle 2.0%) Fall Time * Indicates JEDEC Registered Data (1) Pulse test: Pulse Width 300 µs, Duty Cycle IC, COLLECTOR CURRENT (AMP) 100 µs 10 dc 5.0 2.0 BONDING WIRE LIMITED THERMAL LIMIT, SINGLE PULSE, TC = 25°C SECOND BREAKDOWN LIMIT 1.0 0.5 0.2 5.0 ms 2N6576 2N6577 2N6578 0.1 0.05 1.0 ms TJ = 200°C 2.0 — 1.0 µs — 2.0 µs tf — 7.0 µs 2.0%. 40 20 tr ts There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10%. TJ(pk) may be calculated from the data in Figure 6. At high case temperatures thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 5.0 40 60 100 150 10 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 1. Rated Forward Biased Safe–Operating Area 2 Motorola Bipolar Power Transistor Device Data 5 VCE , COLLECTOR–EMITTER (VOLTS) 10 k hFE, DC CURRENT GAIN + 150°C 5k 2k VCE = 3 Vdc 25°C 1k – 30°C 500 4 15 A 3 10 A 2 5A 1A 1 0.5 200 0.2 1.0 2.0 0.5 5.0 IC, COLLECTOR CURRENT (AMPS) 10 0.0001 15 0.0003 0.1 0.05 Figure 3. Collector Saturation Region 5 IC/IB = 100 4 3 – 30°C 2 + 25°C 1.5 +150°C + 25°C – 30°C 2 1.5 1 0.5 0.5 0.5 1 5 2 IC, COLLECTOR CURRENT (AMPS) TJ = + 150°C 3 1 0.2 VBE(sat) @ IC/IB = 100 VBE(on) @ VCE = 3 V, 25°C 4 V, VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 2. DC Current Gain 0.001 0.002 0.005 0.01 0.02 IB, BASE CURRENT (AMPS) 10 15 0.2 0.5 1 2 5 IC, COLLECTOR CURRENT (AMPS) r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 4. Collector Saturation Voltage 0.1 0.7 10 15 Figure 5. Base–Emitter Voltage D = 0.5 0.5 0.3 0.2 0.2 0.1 P(pk) θJC(t) = r(t) θJC θJC = 1.46 D CURVES APPLY FOR POWER t1 PULSE TRAIN SHOWN t2 READ TIME AT t1 TJ(pk) – TC = P(pk) θJC(t) DUTY CYCLE, D = t1/t2 0.1 0.05 0.07 0.05 0.02 0.03 SINGLE PULSE 0.02 0.01 0.01 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 t, TIME (ms) 20 30 50 70 100 200 300 500 700 1000 Figure 6. Thermal Response Motorola Bipolar Power Transistor Device Data 3 PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO–204AA OUTLINE SHALL APPLY. C –T– E D K 2 PL 0.13 (0.005) U T Q M M Y M –Y– L V SEATING PLANE 2 H G B M T Y 1 –Q– 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF ––– 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC ––– 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF ––– 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC ––– 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1–07 TO–204AA (TO–3) ISSUE Z Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 4 ◊ Motorola Bipolar Power Transistor Device Data *2N6576/D* 2N6576/D