Inchange Semiconductor Product Specification 2SD1213 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Low collector saturation voltage ・Large current capacity. ・Complement to type 2SB904 APPLICATIONS ・Large current switching of relay drivers, high-speed inverters, converters. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 体 导 半 固电 Absolute maximum ratings (Ta=25℃) SYMBOL VCBO EM S E G N A H PARAMETER R O T UC D N O IC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 60 V Collector-emitter voltage Open base 30 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 20 A ICP Collector current (Pulse) 30 A PC Collector power dissipation VCEO INC TC=25℃ 60 Ta=25℃ 2.5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1213 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞ 30 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V Collector-emitter saturation voltage IC=8A; IB=0.4A 0.4 V ICBO Collector cut-off current VCB=40V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=2V 70 hFE-2 DC current gain IC=10A ; VCE=2V 30 Transition frequency IC=1A ; VCE=5V VCEsat fT 体 导 半 Switching times ton ts 固电 tf CONDITIONS Turn-on time EM S E G N A H Storage time INC Fall time Q R S 70-140 100-200 140-280 2 TYP. MAX UNIT 280 120 MHz 0.3 μs 0.6 μs 0.02 μs R O T UC D N O IC IC=10A;IB1=-IB2=-0.5A VCC=10V ;RL=1Ω hFE-1 Classifications MIN Inchange Semiconductor Product Specification 2SD1213 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3