SAVANTIC 2SB919

SavantIC Semiconductor
Product Specification
2SB919
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type 2SD1235
·Low collector saturation voltage
·Large current capacity
APPLICATIONS
·Large current switching of relay drivers,
high-speed inverters,converters
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-30
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current (DC)
-8
A
ICM
Collector current-Peak
-15
A
PC
Collector dissipation
Ta=25
1.75
TC=25
30
W
Tj
Junction temperature
150
Tstg
Storage temperature
-50~150
SavantIC Semiconductor
Product Specification
2SB919
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA; RBE=;
-30
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA; IE=0
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA; IC=0
-6
V
Collector-emitter saturation voltage
IC=-3A; IB=-0.15A
-0.5
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-1A ; VCE=-2V
70
hFE-2
DC current gain
IC=-4A ; VCE=-2V
30
Transition frequency
IC=-1A ; VCE=-5V
VCEsat
fT
CONDITIONS
MIN
TYP.
MAX
UNIT
280
120
MHz
0.1
µs
0.2
µs
0.03
µs
Switching times
ton
Turn-on time
tstg
Storage time
tf
Turn-off time
IC=-4A ; VCC=-10V
IB1=-IB2=-0.2A;RL=2.5B
hFE-1Classifications
Q
R
S
70-140
100-200
140-280
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
2SB919
SavantIC Semiconductor
Product Specification
2SB919
Silicon PNP Power Transistors
4