Inchange Semiconductor Product Specification 2SB826 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SD1062 ・Wide area of safe operation APPLICATIONS ・Relay drivers, ・High-speed inverters, converters ・General high-current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -12 A ICP Collector current (Pulse) -15 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB826 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;RBE=∞ -50 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V Collector-emitter saturation voltage IC=-6A;IB=-0.3A -0.5 V ICBO Collector cut-off current VCB=-40V;IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-4V; IC=0 -0.1 mA hFE-1 DC current gain IC=-1A ; VCE=-2V 70 hFE-2 DC current gain IC=-5A ; VCE=-2V 30 Transition frequency IC=-1A ; VCE=-5V VCEsat fT CONDITIONS MIN TYP. MAX UNIT 280 10 MHz 0.2 μs 0.1 μs 0.4 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=5.0A ;IB1=- IB2=0.5A hFE-1 classifications Q R S 70-140 100-200 140-280 2 Inchange Semiconductor Product Specification 2SB826 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SB826 Silicon PNP Power Transistors 4