JMNIC 2SB633

JMnic
2SB633
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type 2SD613
・High breakdown voltage :VCEO=-85V
・High current :IC=-6A
APPLICATIONS
・Recommend for 25-35W high fidelity
audio frequency amplifier output stage
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-85
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-6
A
ICM
Collector current-peak
-10
A
PC
Collector power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
JMnic
2SB633
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA; RBE=∞
-85
V
V(BR)CBO
Collector-base breakdown voltage
IC=-5mA; IE=0
-100
V
V(BR)EBO
Emitter-base breakdown votage
IE=-5mA; IC=0
-6
V
Collector-emitter saturation voltage
IC=-4A;IB=-0.4 A
-2.0
V
VBE
Base-emitter on voltage
IC=-1A ; VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
40
hFE-2
DC current gain
IC=-3A ; VCE=-5V
20
fT
Transition frequency
IC=-1A ; VCE=-5V
15
MHz
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
150
pF
VCEsat
‹
CONDITIONS
hFE-1 classifications
C
D
E
F
40-80
60-120
100-200
160-320
2
MIN
TYP.
MAX
UNIT
320
JMnic
Product Specification
2SB633
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
2SB633
Silicon PNP Power Transistors
4