JMnic Product Specification 2SB1429 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SD2155 APPLICATIONS ・Power amplifier applications ・Recommend for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -180 V VCEO Collector-emitter voltage Open base -180 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IB Base current -1.5 A PC Collector power dissipation 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SB1429 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-8A ;IB=-0.8A -3.0 V VBE Base-emitter voltage IC=-6A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-180V; IE=0 -5 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -5 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 55 hFE-2 DC current gain IC=-6A ; VCE=-5V 30 Transition frequency IC=-1A ; VCE=-5V 10 MHz Collector output capacitance IE=0;f=1MHz;VCB=-10V 340 pF fT COB CONDITIONS hFE-1 classifications R O 55-10 80-160 2 MIN TYP. MAX -180 UNIT V 160 JMnic Product Specification 2SB1429 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3 JMnic Product Specification 2SB1429 Silicon PNP Power Transistors 4