JMNIC 2SA839

JMnic
Product Specification
2SA839
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220 package
・Complement to type 2SC1669
・High breakdown voltage
APPLICATIONS
・Audio power amplifier applications
・Driver stage amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-150
V
VCEO
Collector-emitter voltage
Open base
-150
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-1.5
A
IE
Emitter current
1.5
A
PC
Collector power dissipation
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SA839
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ,IB=0
-150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ,IC=0
-5
V
Collector-emitter saturation voltage
IC=-0.5A; IB=-50mA
-1.5
V
VBE
Base-emitter on voltage
IC=-0.5A ; VCE=-10V
-1.0
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-20
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-10V
40
hFE-2
DC current gain
IC=-1A ; VCE=-10V
20
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT
Transition frequency
IC=-0.5A ; VCE=-10V
VCEsat
‹
CONDITIONS
hFE-1 Classifications
R
O
Y
40-80
70-140
120-240
2
MIN
TYP.
MAX
UNIT
240
100
pF
6
MHz
JMnic
Product Specification
2SA839
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3