SavantIC Semiconductor Product Specification 2SC1027 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High power dissipation ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC convertor ·General purpose power amplifiers PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=? ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V 6 A 50 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? TC=25? SavantIC Semiconductor Product Specification 2SC1027 Silicon NPN Power Transistors CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 80 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 250 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=250V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=2V 2 MIN 10 TYP. MAX UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SC1027