Inchange Semiconductor Product Specification 2SD536 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage,high speed ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC converters ·General purpose power amplifiers PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A IB Base current 5 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ B TC=25℃ Inchange Semiconductor Product Specification 2SD536 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 200 V V(BR)CBO Collector-base breakdown voltage IC=0.1mA ;IE=0 200 V V(BR)EBO Emitter-base breakdown voltage IE=0.1mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=1A 1.5 V ICBO Collector cut-off current VCB=200V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=5V 2 MIN 50 TYP. MAX UNIT Inchange Semiconductor Product Specification 2SD536 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3