SavantIC Semiconductor Product Specification 2SC4769 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed ·Built-in damper diode APPLICATIONS ·Ultrahigh-definition color display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 7 A ICM Collector current-peak 16 A PC Collector power dissipation TC=25 60 W 3 Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC4769 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat MAX UNIT IC=5A;IB=1.7 A 5 V Base-emitter saturation voltage IC=5A;IB=1.7 A 1.5 V Collector-emitter sustaining voltage IC=100mA;IB=0 800 IEBO Emitter cut-off current VEB=4V; IC=0 40 ICBO Collector cut-off current ICES VCEO(SUS) CONDITIONS MIN TYP. V 130 mA VCB=800V; IE=0 10 µA Collector cut-off current VCE=1500V; RBE=0 1 mA hFE-1 DC current gain IC=1 A ; VCE=5V 8 hFE-2 DC current gain IC=5A ; VCE=5V 3 Diode forward voltage IEC=7A 2.0 V IC=4A;RL=33.3A IB1=0.8A;- IB2=1.6A VCC=200V 3.0 µs 0.2 µs VF 8 Switching times tstg tf Storage time Fall time hFE-2 classifications 1 2 3 3-5 4-6 5-8 2 0.1 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC4769 SavantIC Semiconductor Product Specification 2SC4769 Silicon NPN Power Transistors 4