SavantIC Semiconductor Product Specification 2SD1881 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability ·Built in damper diode APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 10 A ICM Collector current-peak 30 A PC Collector power dissipation 70 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1881 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=8A ;IB=1.6A 5 V VBEsat Base-emitter saturation voltage IC=8A ;IB=1.6A 1.5 V ICBO Collector cut-off current VCB=800V ;IE=0 10 µA IEBO Emitter cut-off current VEB=4V ;IC=0 130 mA ICES Collector cut-off current VCE=1500V 1.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=8A ; VCE=5V 5 Diode forward voltage IEC=10A Fall time IC=6A; VCC=200V; RL=33.3@;IB1=1.2A;IB2=-2.4A; VF tf CONDITIONS 2 MIN TYP. MAX 800 UNIT V 40 10 0.1 2 V 0.3 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD1881 SavantIC Semiconductor Product Specification 2SD1881 Silicon NPN Power Transistors 4