SavantIC Semiconductor Product Specification 2SD2580 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability ·Built-in damper diode APPLICATIONS ·Color TV horizontal deflection output PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 10 A ICM Collector current-peak 30 A PC Collector power dissipation TC=25 70 W 3 Tj Junction temperature 150 Tstg Storage temperature -55~150 1 SavantIC Semiconductor Product Specification 2SD2580 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 VCEsat Collector-emitter saturation voltage IC=8 A;IB=1.6A 5 V VBEsat Base-emitter saturation voltage IC=8 A;IB=1.6A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 µA ICES Collector cut-off current VCE=1500V ;RBE=0 1.0 mA IEBO Emitter cut-off current VEB=4V; IC=0 40 130 mA hFE-1 DC current gain IC=8A ; VCE=5V 5 8 hFE-2 DC current gain IC=1A ; VCE=5V 15 30 Fall time IC=6A;RL=33.3@ IB1=1.2A;-IB2=2.4A;VCC=200V tf CONDITIONS 2 MIN TYP. MAX 800 UNIT V 0.3 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD2580 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 4 2SD2580