SAVANTIC 2SD2580

SavantIC Semiconductor
Product Specification
2SD2580
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PML package
·High speed
·High breakdown voltage
·High reliability
·Built-in damper diode
APPLICATIONS
·Color TV horizontal deflection output
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
10
A
ICM
Collector current-peak
30
A
PC
Collector power dissipation
TC=25
70
W
3
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
1
SavantIC Semiconductor
Product Specification
2SD2580
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=8 A;IB=1.6A
5
V
VBEsat
Base-emitter saturation voltage
IC=8 A;IB=1.6A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
10
µA
ICES
Collector cut-off current
VCE=1500V ;RBE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
40
130
mA
hFE-1
DC current gain
IC=8A ; VCE=5V
5
8
hFE-2
DC current gain
IC=1A ; VCE=5V
15
30
Fall time
IC=6A;[email protected]
IB1=1.2A;-IB2=2.4A;VCC=200V
tf
CONDITIONS
2
MIN
TYP.
MAX
800
UNIT
V
0.3
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SD2580
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
4
2SD2580