CY62167E MoBL® 16-Mbit (1 M × 16 / 2 M × 8) Static RAM 16-Mbit (1M × 16 / 2M × 8) Static RAM Features ■ Configurable as 1 M × 16 or as 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA ❐ Maximum standby current: 12 µA reduces power consumption by 99% when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH, or CE2 LOW, or both BHE and BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when: ■ Ultra low active power ❐ Typical active current: 2.2 mA at f = 1 MHz ■ Easy memory expansion with CE1, CE2, and OE features ■ Automatic power-down when deselected ■ CMOS for optimum speed and power ■ Offered in 48-pin TSOP I package Functional Description[1] The CY62167E is a high performance CMOS static RAM organized as 1 M words by 16-bits/2 M words by 8-bits. This device features advanced circuit design to provide an ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that Logic Block Diagram ■ The device is deselected (CE1 HIGH or CE2 LOW) ■ Outputs are disabled (OE HIGH) ■ Both byte high enable and byte low enable are disabled (BHE, BLE HIGH) or ■ A write operation is in progress (CE1 LOW, CE2 HIGH, and WE LOW) To write to the device, take chip enables (CE1 LOW and CE2 HIGH) and write enable (WE) input LOW. If byte low enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A19). If byte high enable (BHE) is LOW, then data from the I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19). To read from the device, take chip enables (CE1 LOW and CE2 HIGH) and output enable (OE) LOW while forcing the write enable (WE) HIGH. If byte low enable (BLE) is LOW, then data from the memory location specified by the address pins appears on I/O0 to I/O7. If byte high enable (BHE) is LOW, then data from memory appears on I/O8 to I/O15. See the “Truth Table” on page 11 for a complete description of read and write modes. SENSE AMPS A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 ROW DECODER DATA IN DRIVERS 1 M × 16 / 2 M × 8 RAM ARRAY I/O0–I/O7 I/O8–I/O15 COLUMN DECODER BYTE BHE WE CE2 BHE OE CE1 BLE BLE POWER DOWN CIRCUIT CE1 A11 A12 A13 A14 A15 A16 A17 A18 A19 CE2 Note 1. For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines. Cypress Semiconductor Corporation Document Number: 001-15607 Rev. *B • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised August 16, 2010 [+] Feedback CY62167E MoBL® Contents Pin Configuration ............................................................. 3 Product Portfolio .............................................................. 3 Maximum Ratings............................................................. 4 Operating Range............................................................... 4 Electrical Characteristics................................................. 4 Capacitance ...................................................................... 4 Thermal Resistance.......................................................... 4 AC Test Loads and Waveforms....................................... 5 Data Retention Characteristics ....................................... 5 Data Retention Waveform................................................ 5 Switching Characteristics................................................ 6 Switching Waveforms ...................................................... 7 Truth Table ...................................................................... 11 Document Number: 001-15607 Rev. *B Ordering Information...................................................... Ordering Code Definitions ......................................... Package Diagram............................................................ Acronyms ........................................................................ Document Conventions ................................................. Units of Measure ....................................................... Document History Page ................................................. Sales, Solutions, and Legal Information ...................... Worldwide Sales and Design Support....................... Products .................................................................... PSoC Solutions ......................................................... 12 12 13 14 14 14 15 15 15 15 15 Page 2 of 15 [+] Feedback CY62167E MoBL® Pin Configuration[2, 3] 48-Pin TSOP I Top View A15 A14 A13 A12 A11 A10 A9 A8 A19 NC WE CE2 NC BHE BLE A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE Vss I/O15/A20 I/O7 I/O14 I/O6 I/O13 I/O5 I/O12 I/O4 Vcc I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 I/O8 I/O0 OE Vss CE1 A0 Product Portfolio Power Dissipation Product Speed (ns) VCC Range (V) Operating ICC (mA) f = 1 MHz CY62167ELL Min Typ[4] Max 4.5 5.0 5.5 45 Standby ISB2 (µA) f = fmax Typ[4] Max Typ[4] Max Typ[4] Max 2.2 4.0 25 30 1.5 12 Notes 2. NC pins are not connected on the die. 3. The BYTE pin in the 48-TSOPI package must be tied to VCC to use the device as a 1 M × 16 SRAM. The 48-TSOPI package can also be used as a 2 M × 8 SRAM by tying the BYTE signal to VSS. In the 2 M × 8 configuration, pin 45 is A20, while BHE, BLE and I/O8 to I/O14 pins are not used. 4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C. Document Number: 001-15607 Rev. *B Page 3 of 15 [+] Feedback CY62167E MoBL® DC input voltage[5, 6].......................................–0.5 V to 6.0 V Maximum Ratings Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested. Storage temperature ................................ –65 °C to +150 °C Ambient temperature with power applied ........................................... –55 °C to +125 °C Supply voltage to ground potential ..........................................................–0.5 V to 6.0 V DC voltage applied to outputs in high Z state[5, 6] ...........................................–0.5 V to 6.0 V Output current into outputs (LOW) ............................. 20 mA Static discharge voltage........................................... >2001 V (MIL-STD-883, method 3015) Latch-up current ...................................................... >200 mA Operating Range Device CY62167ELL Ambient Temperature Range VCC[7] Industrial –40 °C to +85 °C 4.5 V to 5.5 V Electrical Characteristics Over the Operating Range Parameter Description Test Conditions VOH Output HIGH voltage IOH = –1.0 mA VOL Output LOW voltage IOL = 2.1 mA VIH Input HIGH voltage VCC = 4.5 V to 5.5 V 45 ns Unit Min Typ[9] Max 2.4 – – V – – 0.4 V 2.2 – VCC + 0.5 V V –0.5 – 0.7[8] V VIL Input LOW voltage VCC = 4.5 V to 5.5 V IIX Input leakage current GND < VI < VCC –1 – +1 µA IOZ Output leakage current GND < VO < VCC, output disabled –1 – +1 µA ICC VCC operating supply current f = fMAX = 1/tRC – 25 30 mA – 2.2 4.0 mA – 1.5 12 µA ISB2[10] Automatic power down current—CMOS inputs f = 1 MHz VCC = VCC(max) IOUT = 0 mA CMOS levels CE1 > VCC – 0.2 V or CE2 < 0.2 V, or BHE and BLE > VCC – 0.2 V, VIN > VCC – 0.2 V or VIN < 0.2 V, f = 0, VCC = VCC(max) Capacitance Parameter[11] Description CIN Input capacitance COUT Output capacitance Test Conditions TA = 25 °C, f = 1 MHz, VCC = VCC(typ) Max Unit 10 pF 10 pF TSOP I Unit 60 °C/W 4.3 °C/W Thermal Resistance Parameter[11] Description ΘJA Thermal resistance (junction to ambient) ΘJC Thermal resistance (junction to case) Test Conditions Still air, soldered on a 3 × 4.5 inch, two-layer printed circuit board Notes 5. VIL(min) = –2.0 V for pulse durations less than 20 ns. 6. VIH(max) = VCC + 0.75 V for pulse durations less than 20 ns. 7. Full Device AC operation is based on a 100 µs ramp time from 0 to VCC(min) and 200 µs wait time after VCC stabilization. 8. Under DC conditions the device meets a VIL of 0.8 V. However, in dynamic conditions input LOW voltage applied to the device must not be higher than 0.7 V. 9. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C 10. Chip enables (CE1 and CE2), byte enables (BHE and BLE) and BYTE need to be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating. 11. Tested initially and after any design or process changes that may affect these parameters. Document Number: 001-15607 Rev. *B Page 4 of 15 [+] Feedback CY62167E MoBL® AC Test Loads and Waveforms R1 VCC OUTPUT VCC GND 30 pF R2 10% ALL INPUT PULSES 90% 90% 10% FALL TIME= 1 V/ns RISE TIME= 1 V/ns INCLUDING JIG AND SCOPE EQUIVALENT TO: THÉVENIN EQUIVALENT RTH OUTPUT V Parameters Values Unit R1 1800 Ω R2 990 Ω RTH 639 Ω VTH 1.77 V Data Retention Characteristics Over the operating range Parameter Description Conditions Min Typ[12] Max Unit 2.0 – – V VDR VCC for data retention – ICCDR[13] Data retention current VCC = VDR, CE1 > VCC – 0.2 V or CE2 < 0.2 V, or BHE and BLE > VCC – 0.2 V, VIN > VCC – 0.2 V or VIN < 0.2 V – – 12 µA tCDR[14] Chip deselect to data retention time – 0 – – ns tR[15] Operation recovery time – 45 – – ns Data Retention Waveform[16] VCC VCC(min) tCDR DATA RETENTION MODE VDR > 2.0 V VCC(min) tR CE1 or BHE. BLE or CE2 Notes 12. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C. 13. Chip enables (CE1 and CE2), byte enables (BHE and BLE) and BYTE need to be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating. 14. Tested initially and after any design or process changes that may affect these parameters. 15. Full device operation requires linear VCC ramp from VDR to VCC(min) > 100 µs or stable at VCC(min) > 100 µs. 16. BHE. BLE is the AND of BHE and BLE. Deselect the chip by either disabling the chip enable signals or by disabling BHE and BLE. Document Number: 001-15607 Rev. *B Page 5 of 15 [+] Feedback CY62167E MoBL® Switching Characteristics Over the Operating Range Parameter[17, 18] Description 45 ns Min Max Unit READ CYCLE tRC Read cycle time 45 – ns tAA Address to data valid – 45 ns tOHA Data hold from address change 10 – ns tACE CE1 LOW and CE2 HIGH to data valid – 45 ns tDOE OE LOW to data valid tLZOE – 22 ns [19] 5 – ns Z[19, 20] – 18 ns 10 – ns – 18 ns OE LOW to low Z tHZOE OE HIGH to high tLZCE CE1 LOW and CE2 HIGH to low Z[19] Z[19, 20] tHZCE CE1 HIGH and CE2 LOW to high tPU CE1 LOW and CE2 HIGH to power-up 0 – ns tPD CE1 HIGH and CE2 LOW to power-down – 45 ns tDBE BLE/BHE LOW to data valid – 45 ns 10 – ns – 18 ns tLZBE tHZBE WRITE BLE/BHE LOW to low Z[19] BLE/BHE HIGH to high Z[19, 20] CYCLE[21] tWC Write cycle time 45 – ns tSCE CE1 LOW and CE2 HIGH to write end 35 – ns tAW Address setup to write end 35 – ns tHA Address hold from write end 0 – ns tSA Address setup to write start 0 – ns tPWE WE pulse width 35 – ns tBW BLE/BHE LOW to write end 35 – ns tSD Data setup to write end 25 – ns tHD Data hold from write end 0 – ns WE LOW to high Z[19, 20] – 18 ns WE HIGH to low Z[19] 10 – ns tHZWE tLZWE Notes 17. Test conditions for all parameters other than tristate parameters assume signal transition time of 1 V/ns, timing reference levels of VCC(typ)/2, input pulse levels of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in “AC Test Loads and Waveforms” on page 5. 18. AC timing parameters are subject to byte enable signals (BHE or BLE) not switching when chip is disabled. See application note AN13842 for further clarification. 19. At any temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any device. 20. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high impedance state. 21. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE or BLE or both = VIL, and CE2 = VIH. All signals must be active to initiate a write and any of these signals can terminate a write by going inactive. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write. Document Number: 001-15607 Rev. *B Page 6 of 15 [+] Feedback CY62167E MoBL® Switching Waveforms Figure 1. Read Cycle No. 1 (address transition controlled [22, 23]) tRC RC ADDRESS tOHA DATA OUT tAA PREVIOUS DATA VALID DATA VALID Figure 2. Read Cycle No. 2 (OE controlled [23, 24]) ADDRESS tRC CE1 tPD tHZCE CE2 tACE BHE/BLE tDBE tHZBE tLZBE OE tHZOE tDOE DATA OUT tLZOE HIGH IMPEDANCE HIGH IMPEDANCE DATA VALID tLZCE VCC SUPPLY CURRENT tPU 50% 50% ICC ISB Notes 22. The device is continuously selected. OE, CE1 = VIL, BHE, BLE or both = VIL, and CE2 = VIH. 23. WE is HIGH for read cycle. 24. Address valid before or similar to CE1, BHE, BLE transition LOW and CE2 transition HIGH. Document Number: 001-15607 Rev. *B Page 7 of 15 [+] Feedback CY62167E MoBL® Switching Waveforms (continued) Figure 3. Write Cycle No. 1 (WE controlled [25, 26, 27]) tWC ADDRESS tSCE CE1 CE2 tAW tHA tSA WE tPWE tBW BHE/BLE OE tHD tSD DATA I/O NOTE 28 VALID DATA tHZOE Notes 25. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE or BLE or both = VIL, and CE2 = VIH. All signals must be active to initiate a write and any of these signals can terminate a write by going inactive. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write. 26. Data I/O is high impedance if OE = VIH. 27. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high impedance state. 28. During this period the I/Os are in output state and input signals must not be applied. Document Number: 001-15607 Rev. *B Page 8 of 15 [+] Feedback CY62167E MoBL® Switching Waveforms (continued) Figure 4. Write Cycle No. 2 (CE1 or CE2 controlled.[29, 30, 31]) () tWC ADDRESS tSCE CE1 CE2 tSA tAW tHA tPWE WE tBW BHE/BLE OE DATA I/O tHD tSD NOTE 32 VALID DATA tHZOE Figure 5. Write Cycle No. 3 (WE controlled, OE LOW [31]) tWC ADDRESS tSCE CE1 CE2 tBW BHE/BLE tAW tSA WE tHA tPWE tSD DATA I/O NOTE 32 tHD VALID DATA t LZWE tHZWE Notes 29. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE or BLE or both = VIL, and CE2 = VIH. All signals must be active to initiate a write and any of these signals can terminate a write by going inactive. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write. 30. Data I/O is high impedance if OE = VIH. 31. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high impedance state. 32. During this period the I/Os are in output state and input signals must not be applied. Document Number: 001-15607 Rev. *B Page 9 of 15 [+] Feedback CY62167E MoBL® Switching Waveforms (continued) Figure 6. Write Cycle No. 4 (BHE/BLE controlled, OE LOW [33]) tWC ADDRESS CE1 CE2 tSCE tAW tHA tBW BHE/BLE tSA tPWE WE tSD DATA I/O NOTE 34 tHD VALID DATA Notes 33. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high impedance state. 34. During this period the I/Os are in output state and input signals must not be applied. Document Number: 001-15607 Rev. *B Page 10 of 15 [+] Feedback CY62167E MoBL® Truth Table CE1 H CE2 WE OE BHE BLE [35] X X X X X X[35] Inputs Outputs Mode Power High Z Deselect/power-down Standby (ISB) L X X X X High Z Deselect/power-down Standby (ISB) [35] X X H H High Z Deselect/power-down Standby (ISB) L H H L L L Data out (I/O0–I/O15) Read Active (ICC) L H H L H L Data out (I/O0–I/O7); High Z (I/O8–I/O15) Read Active (ICC) L H H L L H High Z (I/O0–I/O7); Data out (I/O8–I/O15) Read Active (ICC) L H H H L H High Z Output disabled Active (ICC) L H H H H L High Z Output disabled Active (ICC) L H H H L L High Z Output disabled Active (ICC) L H L X L L Data in (I/O0–I/O15) Write Active (ICC) L H L X H L Data in (I/O0–I/O7); High Z (I/O8–I/O15) Write Active (ICC) L H L X L H High Z (I/O0–I/O7); Data in (I/O8–I/O15) Write Active (ICC) [35] X X Note 35. The ‘X’ (Do not care) state for the chip enables in the truth table refers to the logic state (either HIGH or LOW). Intermediate voltage levels on these pins is not permitted Document Number: 001-15607 Rev. *B Page 11 of 15 [+] Feedback CY62167E MoBL® Ordering Information Table 1 lists the CY62167ELL key package features and ordering codes. The table contains only the parts that are currently available. If you do not see what you are looking for, contact your local sales representative. For more information, visit the Cypress website at www.cypress.com and refer to the product summary page at http://www.cypress.com/products. Table 1. Key Features and Ordering Information Speed (ns) 45 Package Diagram Ordering Code CY62167ELL-45ZXI 51-85183 Package Type 48-pin TSOP I (Pb-free) Operating Range Industrial Ordering Code Definitions CY 621 6 7 E LL - 45 ZX I Temperature Grade: I = Industrial Package Type: (ZX = 48-pin TSOP I (Pb-free)) 45 = Speed Grade LL = Low Power E = Process Technology 90 nm Buswidth = × 16 Density = 16-Mbit Family Code: MoBL SRAM family Company ID: CY = Cypress Document Number: 001-15607 Rev. *B Page 12 of 15 [+] Feedback CY62167E MoBL® Package Diagram Figure 7. 48-Pin TSOP I (12 mm × 18.4 mm × 1.0 mm), 51-85183 51-85183 *B Document Number: 001-15607 Rev. *B Page 13 of 15 [+] Feedback CY62167E MoBL® Acronyms Acronym Description BHE byte high enable BLE byte low enable CMOS complementary metal oxide semiconductor CE chip enable I/O input/output OE output enable SRAM static random access memory TSOP thin small outline package VFBGA very fine ball grid array WE write enable Document Conventions Units of Measure Table 2. Units of Measure Symbol Unit of Measure ns nano seconds V volts µA micro amperes mA milli amperes pF pico Farad °C degree Celsius W watts Document Number: 001-15607 Rev. *B Page 14 of 15 [+] Feedback CY62167E MoBL® Document History Page Document Title: CY62167E MoBL® 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Document Number: 001-15607 Rev. ECN No. Issue Date Orig. of Change ** 1103145 See ECN VKN New Data Sheet *A 1138903 See ECN VKN Converted from preliminary to final Changed ICC(max) spec from 2.8 mA to 4.0 mA for f=1 MHz Changed ICC(typ) spec from 22 mA to 25 mA for f=fmax Changed ICC(max) spec from 25 mA to 30 mA for f=fmax Added footnote# 8 related to VIL Changed ICCDR spec from 10 μA to 12 μA Added footnote# 14 related to AC timing parameters *B 2934385 06/03/10 VKN Included BHE, BLE in ISB2, ICCDR test conditions to reflect byte power down feature Added footnote #35 related to chip enable Updated package diagram Updated template Description of Change Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. Products Automotive Clocks & Buffers Interface Lighting & Power Control PSoC Solutions cypress.com/go/automotive psoc.cypress.com/solutions cypress.com/go/clocks PSoC 1 | PSoC 3 | PSoC 5 cypress.com/go/interface cypress.com/go/powerpsoc cypress.com/go/plc Memory Optical & Image Sensing PSoC Touch Sensing cypress.com/go/memory cypress.com/go/image cypress.com/go/psoc cypress.com/go/touch USB Controllers Wireless/RF cypress.com/go/USB cypress.com/go/wireless © Cypress Semiconductor Corporation, 2007-2010. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document Number: 001-15607 Rev. *B Revised August 16, 2010 Page 15 of 15 All products and company names mentioned in this document may be the trademarks of their respective holders. [+] Feedback