Avionics Pulsed Power Transistor, 700 Watts, 12/10/01 1.03-1.09 GHz, 32 µS Pulse, 2% Duty PH1090-700B Rev. 0 Features Q Q Q Q Q Q Q Q Absolute Maximum Ratings @ 25 °C Designed for Mode-S IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Parameter Symbol Rating Units Collector-Emitter Voltage VCES 65 V Emitter-Base Voltage VEBO 3.0 V Collector Current (Peak) IC 35 A Dissipated Power (Standard Pulse Cond.) PTOT 2.9 kW Dissipated Power (Mode-S Pulse Train) PTOT 700 W Storage Temperature TSTG -65 to +200 °C Junction Temperature Tj 200 °C Outline Drawing Broadband Test Fixture Impedances TEST FIXTURE INPUT CIRCUIT 50Ω Z IF TEST FIXTURE OUTPUT CIRCUIT Z OF 50Ω F (GHz) Z IF (Ω) Z OF (Ω) 1.03 1.1 –j1.4 1.2 –j0.8 1.06 1.1 –j1.2 1.0 –j0.7 1.09 1.0 –j1.0 0.8 –j0.7 Avionics Pulsed Power Transistor, 700 Watts, 1.03-1.09 GHz, 32µS Pulse, 2% Duty PH1090-700B 12/10/01 Rev. 0 Electrical Characteristics at 25ºC Standard Pulse Condition: 32µS Pulse Width, 2% Duty Cycle Peak Power: 700 Watts Parameter Symbol Collector-Emitter Breakdown Voltage Test Conditions Min Max Units BVCES IC = 250 mA 80 - V ICES VCE = 50 V - 25 mA RTH(JC) VCC=50 V, Pout=700 W, F=1.03, 1.09 GHz Pulse Conditions: 32µs, 2% - 0.06 °C/W GP VCC=50 V, Pout=700 W, F=1.03, 1.09 GHz Pulse Conditions: 32µs, 2% 7.5 - dB η VCC=50 V, Pout=700 W, F=1.03, 1.09 GHz Pulse Conditions: 32µs, 2% 50 - % RL VCC=50 V, Pout=700 W, F=1.03, 1.09 GHz Pulse Conditions: 32µs, 2% -10 - dB Load Mismatch Tolerance VSWR-T VCC=50 V, Pout=700 W, F=1.03, 1.09 GHz Pulse Conditions: 32µs, 2% - 5.0:1 - Load Mismatch Stability VSWR-S VCC=50 V, Pout=700 W, F=1.03, 1.09 GHz Pulse Conditions: 32µs, 2% - 1.5:1 - Collector-Emitter Leakage Current Thermal Resistance Power Gain Collector Efficiency Input Return Loss Mode-S Pulse Train: 48 Pulses of 32µS “on”, 18µS “off” repeated every 24 mS, 6.4% Overall Duty Cycle** Peak Power: 450 Watts Parameter Symbol Test Conditions Typical Units RTH(JC) VCC=45v, Pout=450 W, F=1.03, 1.09 GHz Mode-S Pulse Train 0.20 °C/W GP VCC=45v, Pout=450 W, F=1.03, 1.09 GHz Mode-S Pulse Train 8.0 dB η VCC=45v, Pout=450 W, F=1.03, 1.09 GHz Mode-S Pulse Train 55 % RL VCC=45v, Pout=450 W, F=1.03, 1.09 GHz Mode-S Pulse Train -13 dB Load Mismatch Tolerance VSWR-T VCC=45v, Pout=450 W, F=1.03, 1.09 GHz Mode-S Pulse Train 2:1 - Load Mismatch Stability VSWR-S VCC=45v, Pout=450 W, F=1.03, 1.09 GHz Mode-S Pulse Train 1.5:1 - Thermal Resistance Power Gain Collector Efficiency Input Return Loss ** Please note, the standard PH1090-700B device will be tested in accordance with the specifications defined for the Standard Pulse Condition (32µS, 2%) 2 Avionics Pulsed Power Transistor, 700 Watts, 1.03-1.09 GHz, 32µS Pulse, 2% Duty PH1090-700B 12/10/01 Rev. 0 Gain & Efficiency vs POUT Vcc = 50V, Pulse Width = 32µS, Duty Cycle = 2% Frequency = 1030 MHz Frequency = 1090 MHz 9.0 65 9.0 65 8.0 55 7.5 50 7.0 300 Efficiency 45 400 500 600 Pout (watts) 700 Gain 8.5 8.0 55 7.5 50 7.0 300 800 60 400 500 600 Pout (watts) 700 Collector Efficiency (%) Efficiency 60 Gain (dB) Gain (dB) 8.5 Collector Efficiency (%) Gain 45 800 Gain & Efficiency vs POUT Vcc = 45V, Mode-S Pulse Train Frequency = 1030 MHz Efficiency 8.0 55 7.5 50 350 400 450 Pout (watts) 500 45 550 65 8.5 60 Gain 8.0 55 Efficiency 7.5 7.0 300 50 350 400 450 Pout (watts) 500 Collector Efficiency (%) Gain (dB) 60 Gain (dB) Gain 8.5 7.0 300 9.0 65 Collector Efficiency (%) 9.0 Frequency = 1090 MHz 45 550 3 Avionics Pulsed Power Transistor, 700 Watts, 1.03-1.09 GHz, 32µS Pulse, 2% Duty PH1090-700B 12/10/01 Rev. 0 Broadband Circuit Dimensions Broadband Assembly Diagram Specifications subject to change without notice. North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 4