MICROSEMI TPR500A

TPR 500A
500 Watts, 50 Volts, Pulsed
Avionics 1030 - 1090 MHz
GENERAL DESCRIPTION
The TPR 500A is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030-1090 MHz. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. The transistor includes input prematch for broadband
capaility. Low thermal resistance package reduces junction temperature,
extends life.
CASE OUTLINE
55KT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2
Maximum Voltage and Current
BVces
Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
1750 Watts
55 Volts
3.5 Volts
40 Amps
- 65 to + 200oC
+ 200oC
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
Pout
Pin
Pg
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1090 MHz
Vcc = 50 Volts
PW = 10 µsec
DF = 1%
F = 1090 MHz
500
ηc
VSWR
BVebo
BVces
hFE
θjc2
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC - Current Gain
Thermal Resistance
Ie = 30 mA
Ic = 30 mA
Ic = 500 mA, Vce = 5 V
TYP
MAX
150
5.2
35
UNITS
Watts
Watts
dB
%
10:1
3.5
55
10
Volts
Volts
0.1
o
C/W
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Rev A June, 1994
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.