MDS500L 500 Watts, 50 Volts, Pulsed Avionics 1030 MHz PRELIMINARY GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The MDS500L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 MHz frequency band. The transistor includes input prematch for broadband performance. The device has gold thin-film metallization and diffused ballasting in a hermetically sealed package for proven highest MTTF. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @25 C1 833 W Maximum Voltage and Current Collector to Emitter Voltage (BVces) 70 V Emitter to Base Voltage (BVebo) 3.5 V Peak Collector Current (Ic) 25 A Maximum Temperatures Storage Temperature -65 to +150 C Operating Junction Temperature +200 C ELECTRICAL CHARACTERISTICS @ 25 C SYMBOL CHARACTERISTICS Pout Power Out Pin Power Input Pg Power Gain c VSWR Pd1 Trise1 Collector Efficiency Load Mismatch Tolerance Pulse Droop Rise Time TEST CONDITIONS F = 1030 MHz Vcc = 50 Volts PW = Note 2 DF = Note 2 MIN TYP MAX 500 W 70 8.5 W dB 50 F = 1030 MHz F = 1030 MHz UNITS % 3:1 0.8 100 dB nSec 15 V V V mA 0.21 C/W FUNCTIONAL CHARACTERISTICS @ 25 C BVebo BVces BVcbo Ices hFE jc1 Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Base Breakdown Collector to Emitter Leakage DC – Current Gain Thermal Resistance Ie = 30 mA Ic = 50 mA Ic = 50 mA Vce = 50V Vce = 5V, Ic = 1.0 A 3.0 70 70 20 NOTE 1: AT RATED OUTPUT POWER AND PULSE CONDITIONS NOTE 2: Burst: 32µSec ON/ 18µSec OFF x 48, repeated at 23mSec Rev. A May 2006 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MDS500L 700 600 500 400 300 200 100 0 Pout Efficiency 0 20 40 60 80 70 60 50 40 30 20 10 0 100 Efficiency (%) Pout (W) Pout and Nc vs Pin (32us; 2%) Pin(W) 700 70 600 60 500 50 400 40 300 30 200 20 100 10 0 Efficiency (%) Pout(W) Pout and Nc vs Pin (32us burst,N=48) 0 10 20 30 40 50 60 70 80 Pin(W ) Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MDS500L Output Power (W) 600 500 50 400 40 300 30 Pout 200 Nc 20 Efficiency (%) Pout & Nc vs Pin (Mode-S: 0.5uS on/off x 128; Per=6.4ms) 60 10 100 0 0 20 40 60 80 0 100 Input Power (W) Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.