BAR64V-05W-V Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-05W-V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance (RF) can be adjusted over a wide range. A long carrier life time offers low signal distortion for signals over 10 MHz up to 3 GHz. Typical applications for these PIN Diodes are switches and attenuators in wireless, mobile and TV-systems. 2 3 1 1 2 18380 3 Features Mechanical Data • • • • • • • Case: SOT323 plastic case Weight: approx. 6.0 mg Packaging Codes/Options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box High voltage current controlled RF resistor Small diode capacitance e3 Low series inductance Low forward resistance Improved performance due to two seperated dice Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • • • • For frequencies up to 3 GHz RF-signal tuning Signal attenuator and switches Mobile, wireless and TV-Applications Parts Table Part BAR64V-05W-V Ordering code Marking Remarks BAR64V-05W-V-GS18 or BAR64V-05W-V-GS08 DW5 Tape and reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Unit Reverse voltage Parameter VR 100 V Forward current IF 100 mA Junction temperature Tj 150 °C Tstg - 55 to + 150 °C Storage temperature range Document Number 81836 Rev. 1.1, 25-Feb-08 Test condition For technical support, please contact: [email protected] www.vishay.com 1 BAR64V-05W-V Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Test condition Symbol Min. Reverse voltage Parameter IR = 10 µA VR 100 Reverse current VR = 50 V IR Unit 50 nA V IF = 50 mA VF CD 0.5 f = 1 MHz, VR = 1 V CD 0.37 0.5 pF f = 1 MHz, VR = 20 V CD 0.23 0.35 pF f = 100 MHz, IF = 1 mA rf 10 20 Ω Ω 1.1 V pF f = 100 MHz, IF = 10 mA rf 2.0 3.8 f = 100 MHz, IF = 100 mA rf 0.8 1.35 IF = 10 mA, IR = 6 mA, iR = 3 mA trr 1.8 µs LS 1 nH Forward resistance Charge carrier life time Max. f = 1 MHz, VR = 0 Forward voltage Diode capacitance Typ. Series inductance Ω Typical Characteristics Tamb = 25 °C, unless otherwise specified 100.00 I F - Forward Current (mA) rf - Forward Ressistance (Ω) 100.0 f = 100 MHz 10.0 1.0 0.1 0.1 10.00 1.00 0.10 0.01 1 10 100 0.5 IF - Forward Current (mA) 18342 Figure 1. Forward Resistance vs. Forward Current 0.8 0.9 1.0 12 f = 1 MHz I F = 10 mA 10 I F - Forward Current (mA) 0.45 CD - Diode Capacitance (pF) 0.7 Figure 3. Forward Current vs. Forward Voltage 0.50 0.40 0.35 0.30 0.25 0.20 0.15 0.10 8 I R = 6 mA 6 i rr = 3 mA 4 2 0 -2 -4 -6 0.05 -8 - 500 0.00 0 18334 4 8 12 16 20 24 28 VR - Reverse Voltage (V) Figure 2. Diode Capacitance vs. Reverse Voltage www.vishay.com 2 0.6 VF - Forward Voltage (V) 18326 18338 500 1500 2500 3500 trr - Reverse Recovery Time (ns) Figure 4. Typical Charge Recovery Curve For technical support, please contact: [email protected] Document Number 81836 Rev. 1.1, 25-Feb-08 BAR64V-05W-V Vishay Semiconductors 0 |S21|² - Insertion Loss (dB) - 0.5 IF = 3mA -1 IF = 10 mA IF = 100 mA IF = 1 mA - 1.5 IF = 0.5 mA -2 - 2.5 -3 0 0.5 1 1.5 2 2.5 3 3.5 f - Frequency (GHz) 21027 Figure 5. Insertion Loss of One Diode Inserted in Series with 50 Ω Strip Line |S21|² = |S12 |² - Isolation (dB) 0 -5 - 10 - 15 VR = 0, diode zero-biased - 20 - 25 0 0.5 1 1.5 2 2.5 3 3.5 f - Frequency ( GHz ) 21028 IP2 - Second Order Intercept Point (dBm) Figure 6. Isolation of One Diode Inserted in Series with 50 Ω Strip Line 150 100 f = 1.8 GHz f = 0.9 GHz 50 0 0.1 21029 1 10 IF - Forward Current (mA) Figure 7. Second Order Intercept Point for One Diode Inserted in 50 Ω Strip Line Document Number 81836 Rev. 1.1, 25-Feb-08 For technical support, please contact: [email protected] www.vishay.com 3 BAR64V-05W-V Vishay Semiconductors 8° 0.46 [0.018] 0° 0.8 [0.031] 1.1 [0.043] 0.08 [0.003] 0.15 [0.006] 2.0 [0.079] 0.0 [0.000] 2.2 [0.087] 0.1 [0.004] 0.8 [0.031] 1.0 [0.039] Package Dimensions in mm (inches): SOT323-V 0.26 [0.010] 0.4 [0.016] 0.525 [0.021] ref. 0.2 [0.008] 2.45 [0.096] 0.65 [0.026] typ. 1.4 [0.055] 1.15 [0.045] 1.35 [0.053] 2.15 [0.085] 1.2 [0.047] 0.6 [0.024] Created - Date: 21 February 2008 Document no.: 6.541-5040.02-4 21113 www.vishay.com 4 0.65 [0.026] 1.3 [0.051] For technical support, please contact: [email protected] 1.8 [0.071] 0.8 [0.031] foot print recommendation: Document Number 81836 Rev. 1.1, 25-Feb-08 BAR64V-05W-V Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81836 Rev. 1.1, 25-Feb-08 For technical support, please contact: [email protected] www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1