TECHNICAL NOTE High-performance Regulator IC Series for PCs Termination Regulators for DDR-SDRAMs BD3537F Description BD3537F is a termination regulator compatible with JEDEC DDR-SDRAM, which functions as a linear power supply incorporating an N-channel MOSFET and provides a sink/source current capability up to 1.8A respectively. A built-in high-speed OP-AMP specially designed offers an excellent transient response. Requires 5.0 volts as a bias power supply to drive the N-channel MOSFET. For BD3537F, ceramic capacitor can be used as output capacitor. Thus, the BD3537F is designed to enable significant package profile downsizing as the total regulator part. Features 1) Incorporates a push-pull power supply for termination (VTT) 2) Incorporates an enabler 3) Incorporates an undervoltage lockout (UVLO) 4) Employs SOP8 package 5) Incorporates a thermal shutdown protector (TSD) 6) Compatible with Dual Channel (DDR-II) 7) Operates with input voltage from 4.75 to 5.25 volts 8) Incorporates soft start function Use Power supply for DDR I/II - SDRAM Oct. 2008 ●ABSOLUTE MAXIMUM RATINGS Parameter Symbol Limits Unit VCC 7 *1 V REF *1 V 7 *1 V Input Voltage REF Input Voltage Termination Input Voltage 7 VTT_IN Output Current ITT 3 A Power Dissipation1 Pd1 560 *2 mW Power Dissipation2 Pd2 690 *3 mW Operating Temperature Range Topr -30~+100 ℃ Storage Temperature Range Tstg -55~+150 ℃ Tjmax +150 ℃ Maximum Junction Temperature *1 Should not exceed Pd. *2 Reduced by 4.48mW for each increase in Ta of 1℃ over 25℃ (no heat sink). *3 Reduced by 5.52mW for each increase in Ta of 1℃ over 25℃ (when mounted on 70mm x 70mm x 1.6mm Glass-epoxy PCB). ●OPERATING CONDITIONS (Ta=25℃) Parameter Input Voltage Termination Input Voltage Reference Voltage Symbol MIN MAX Unit VCC 4.75 5.25 V VTT_IN 1.746 1.854 V VEN 0.6 1.6 V ★ No radiation-resistant design is adopted for the present product. ●ELECTRICAL CHARACTERISTICS (unless otherwise noted, Ta=25℃, VCC=5V, REF=0.9V, VTT_IN=1.8V) Standard Value Parameter Symbol Unit Condition MIN TYP MAX Standby Current IST - 50 90 uA REF<0.15V(Shutdown) Bias Current ICC - 1 2.5 mA REF=0.9V Termination Output Voltage 1 VTT1 REF-20m REF REF+20m V ITT=0A Termination Output Voltage 2 VTT2 REF-20m REF REF+20m V ITT=-1.8A to 1.8A Source Current ITT+ 1.8 - - A Sink Current ITT- - - -1.8 A Upper Side ON Resistance 1 HRON1 - 0.3 0.5 Ω Lower Side ON Resistance 1 LRON1 - 0.3 0.5 Ω UVLO Threshold Voltage VUVLO 3.5 3.8 4.1 V UVLO Hysteresis Voltage ⊿VUVLO 100 160 220 mV EN-ON Voltage VENH 0.6 - - V EN-OFF Voltage VENL - - 0.15 V [Termination] [UVLO block] [Enable block] 2/10 VCC : sweep up VCC : sweep down ●Soft start function (a) when input REF voltage VCC REF EN shutdown (0.6V/TYP) VTTIN VTT TSOFT Include soft start (b) when input VCC voltage VCC UVLO released (3.8V/TYP) REF VTTIN VTT TSOFT Include soft start (c) when input VTTIN voltage VCC REF VTTIN VTT No soft start 3/10 ※TSOFT≦1msec ●Reference Data VTT (50mV/Div.) VTT (50mV/Div.) VTT (50mV/Div.) ITT (1A/Div.) ITT (1A/Div.) ITT (1A/Div.) Fig.2 DDRI (1A→-1A) Fig.1 DDRI (-1A→1A) VTT (50mV/Div.) VTT (10mV/Div.) ITT ITT (1A/Div.) (1A/Div.) VTT VTT REF REF VTT IN VTT IN VCC VCC Fig.6 Input Sequence 2 Fig.5 Input Sequence 1 Fig.4 DDRⅡ (-1A→1A) 1.258 0.912 1.256 0.910 1.254 0.908 0.906 1.252 VTT(V) VTT(V) VTT REF Fig.3 DDRⅡ (-1A→1A) 1.250 1.248 VTT IN 0.898 1.244 -2 Fig.7 Input Sequence 3 0.902 0.900 1.246 VCC 0.904 -1 0 ITT(A) 1 Fig.8 ITT-VTT (DDR-Ⅰ) REF(500mV/div) VTT(500mV/div) IVTTIN(50mA/div) (100usec/div) Fig.10 Soft start 4/10 2 0.896 -2 -1 0 ITT(A) 1 Fig.9 ITT-VTT (DDR-Ⅱ) 2 ●BLOCK DIAGRAM VTT_IN VDDQ C1 C2 R1 C4 R2 VCC REF VTT_IN VCC VCC + Reference Block Protection UVLO Enable Block Thermal TSD + - EN TSD EN UVLO - VCC + VTT C3 VTT TSD EN UVLO GND ●PIN CONFIGRATION ●PIN FUNCTION VTT_IN 1 8 N.C. GND 2 7 N.C REF 3 6 VCC VTT 4 5 N.C. PIN No. 1 2 3 4 5 6 7 8 PIN name VTT_IN GND REF VTT N.C. VCC N.C. N.C. PIN Function Termination power supply pin Ground pin Reference voltage output pin Termination output pin Non connection VCC Pin Non connection Non connection ●Description of operations ・VCC In BD3537F, an independent power input pin is provided for an internal circuit operation of the IC. This is used to drive the amplifier circuit of the IC, and its maximum current rating is 2.5mA. The power supply voltage is 5.0 volts. It is recommended to connect a bypass capacitor of 1μF or so to VCC. ・VTT_IN VTT_IN is a power supply input pin for VTT output. Voltage in the range up to 1.8 volts may be supplied to this VTT_IN terminal, but care must be taken to the current limitation due to on-resistance of the IC and the change in allowable loss due to input/output voltage difference. Higher impedance of the voltage input at VTT_IN may result in oscillation or degradation in ripple rejection, which must be noted. To VTT_IN terminal, it is recommended to use a 10μF capacitor characterized with less change in capacitance. But it may depend on the characteristics of the power supply input and the impedance of the pc board wiring, which must be carefully checked before use. ・VTT A DDR memory termination output pin. BD3537F has a sink/source current capability of ±1.8A respectively. The output voltage is same as REF voltage. VTT output is turned to OFF when VCC UVLO or thermal shutdown protector is activated with EN pin level becomes EN-OFF voltage or below. Do not fail to connect a capacitor to VTT output pin for a loop gain phase compensation and a reduction in output voltage variation in the event of sudden change in load. Insufficient capacitance may cause an oscillation. High ESR (Equivalent Series Resistance) of the capacitor may result in increase in output voltage variation in the event of sudden change in load. It is recommended to use a 10 μF ceramic capacitor (X5R or X7R), though it depends on ambient temperature and other conditions. A low ESR ceramic capacitor may reduce a loop gain phase margin and may cause an oscillation, which may be improved by connecting a resistor in series with the OS-capacitor (several-hundred μF). ・REF With an input of 0.6 volts or higher, the level at REF pin turns to “High” to provide VTT output. If the input is lowered to 0.15 volts or less, the level at REF pin turns to “Low” and VTT status turns to Hi-Z. 5/10 ●Evaluation Board ■Evaluation Board circuit C10 VTTIN U1 4 C7 VTT GND GND 3 C9 C2 C1 R1 VREF VTT VTTIN C8 1 VDDQ C12 M1 R3 EN BD3537F R2 VCC C13 REF SW VCC C4 R4 VCC C11 GND C3 C6 C5 6 M0 GND 2 GND GND ■Evaluation Board Application Components Part No U1 M0 M1 C1 C2 C3 C4 C5 C6 C7 Value Company ROHM Parts Name Part No BD3537F 0.1uF 0.1uF KYOCERA KYOCERA CM05B104K10A CM05B104K10A 1uF KYOCERA CM05B105K10A C8 C9 C10 R1 R2 R3 R4 R5 R6 Value Company Parts Name 10uF KYOCERA CM316B106M10A 100kΩ 100kΩ ROHM ROHM MCR03 MCR03 ■BD3537F (SOP8) Evaluation Board Layout Silk Screen TOP Layer 6/10 Bottom Layer ●Heat loss Thermal design must be conducted with the operation under the conditions listed below (which are the guaranteed temperature range requiring consideration on appropriate margins etc.): 1. Ambient temperature Ta: 100°C or lower 2. Chip junction temperature Tj: 150°C or lower The chip junction temperature Tj can be considered as follows. See Page 9/9 for θja. Most of heat loss in BD3537F occurs at the output N-channel FET. The power lost is determined by multiplying the voltage between VIN and Vo by the output current. As this IC employs the power PKG, the thermal derating characteristics significantly depends on the pc board conditions. When designing, care must be taken to the size of a pc board to be used. Power dissipation (W) = {Input voltage (VTT_IN) – Output voltage (VTT≒REF)}×Io (Ave) If VTT_IN = 1.8volts, REF=0.9volts, and Io (Ave)=0.5 A, for instance, the power dissipation is determined as follows: Power dissipation (W) = {1.8 (V) – 0.9 (V)} × 0.5 (A) = 0.4 (W) ●NOTE FOR USE 1.Absolute maximum ratings For the present product, thoroughgoing quality control is carried out, but in the event that applied voltage, working temperature range, and other absolute maximum rating are exceeded, the present product may be destroyed. Because it is unable to identify the short mode, open mode, etc., if any special mode is assumed, which exceeds the absolute maximum rating, physical safety measures are requested to be taken, such as fuses, etc. 2.GND potential Bring the GND terminal potential to the minimum potential in any operating condition. 3.Thermal design Consider allowable loss (Pd) under actual working condition and carry out thermal design with sufficient margin provided. 4.Terminal-to-terminal short-circuit and erroneous mounting When the present IC is mounted to a printed circuit board, take utmost care to direction of IC and displacement. In the event that the IC is mounted erroneously, IC may be destroyed. In the event of short-circuit caused by foreign matter that enters in a clearance between outputs or output and power-GND, the IC may be destroyed. 5.Operation in strong electromagnetic field The use of the present IC in the strong electromagnetic field may result in maloperation, to which care must be taken. 6.Built-in thermal shutdown protection circuit The present IC incorporates a thermal shutdown protection circuit (TSD circuit). The working temperature is 175°C (standard value) and has a -15°C (standard value) hysteresis width. When the IC chip temperature rises and the TSD circuit operates, the output terminal is brought to the OFF state. The built-in thermal shutdown protection circuit (TSD circuit) is first and foremost intended for interrupt IC from thermal runaway, and is not intended to protect and warrant the IC. Consequently, never attempt to continuously use the IC after this circuit is activated or to use the circuit with the activation of the circuit premised. 7.Capacitor across output and GND In the event a large capacitor is connected across output and GND, when Vcc and VIN are short-circuited with 0V or GND for some kind of reasons, current charged in the capacitor flows into the output and may destroy the IC. Use a capacitor smaller than 1000 μF between output and GND. 8.Inspection by set substrate In the event a capacitor is connected to a pin with low impedance at the time of inspection with a set substrate, there is a fear of applying stress to the IC. Therefore, be sure to discharge electricity for every process. As electrostatic measures, provide grounding in the assembly process, and take utmost care in transportation and storage. Furthermore, when the set substrate is connected to a jig in the inspection process, be sure to turn OFF power supply to connect the jig and be sure to turn OFF power supply to remove the jig. 9. Inputs to IC terminals + This device is a monolithic IC with P isolation between P-substrate and each element as illustrated below. This P-layer and the N-layer of each element form a PN junction which works as: ・a diode if the electric potentials at the terminals satisfy the following relationship; GND>Terminal A>Terminal B, or ・a parasitic transistor if the electric potentials at the terminals satisfy the following relationship; Terminal B>GND Terminal A. The structure of the IC inevitably forms parasitic elements, the activation of which may cause interference among circuits, and/or malfunctions contributing to breakdown. It is therefore requested to take care not to use the device in such manner that the voltage lower than GND (at P-substrate) may be applied to the input terminal, which may result in activation of parasitic elements. Resistor Transistor (NPN) Pin A Pin B C Pin B B E Pin A N P+ N P+ P N N Parasitic element P+ P substrate Parasitic element GND B N P+ P N C E Parasitic element P substrate Parasitic element 7/10 GND GND GND Other adjacent elements 10. GND wiring pattern When both a small-signal GND and high current GND are present, single-point grounding (at the set standard point) is recommended, in order to separate the small-signal and high current patterns, and to be sure the voltage change stemming from the wiring resistance and high current does not cause any voltage change in the small-signal GND. In the same way, care must be taken to avoid wiring pattern fluctuations in any connected external component GND. 11. Output capacitor (C3) Do not fail to connect a output capacitor to VTT output terminal for stabilization of output voltage. The capacitor connected to VTT output terminal works as a loop gain phase compensator. Insufficient capacitance may cause an oscillation. It is recommended to connect a 10 μF ceramic capacitor (X5R or X7R) near to VTT and GND, though it depends on ambient temperature and other conditions. A low ESR ceramic capacitor may reduce a loop gain phase margin and may cause an oscillation, which may be improved by connecting a resistor in series with the OS-capacitor (several-hundred μF). It is therefore requested to carefully check under the actual temperature and load conditions to be applied. 12. Input capacitors (C1 and C2) These input capacitors are used to reduce the output impedance of power supply to be connected to the input terminals (VCC and VTT_IN). Increase in the power supply output impedance may result in oscillation or degradation in ripple rejecting characteristics. It is recommended to use a low temperature coefficient 1μF (for VCC) and 10μF (for VTT_IN) capacitor, but it depends on the characteristics of the power supply input, and the capacitance and impedance of the pc board wiring pattern. It is therefore requested to carefully check under the actual temperature and load conditions to be applied. 13. Input terminals (VCC, VTT_IN and REF) VCC, VTT_IN and REF terminals of this IC are made up independent one another. To VCC terminal, the UVLO function is provided for malfunction protection. REF pin includes the Enable circuit. Irrespective of the input order of the inputs terminals, VTT output is activated to provide the output voltage when UVLO voltages reach the threshold voltage while REF voltage reaches the threshold of EN pin. 14.REF pin (R1 , R2 , C4) REF pin controls this IC’s status ON or OFF. When REF voltage reaches EN-ON voltage, the output voltage operates. Then BD3537F does not include “soft start function” so set the start up time by the value of extra components R1, R2 and C4. 15. Operating range Within the operating range, the operation and function of the circuits are generally guaranteed at an ambient temperature within the range specified. The values specified for electrical characteristics may not be guaranteed, but drastic change may not occur to such characteristics within the operating range. 16. Allowable loss Pd For the allowable loss, the thermal derating characteristics are shown in the Exhibit, which should be used as a guide. Any uses that exceed the allowable loss may result in degradation in the functions inherent to IC including a decrease in current capability due to chip temperature increase. Use within the allowable loss. 17. Built-in thermal shutdown protection circuit Thermal shutdown protection circuit is built-in to prevent thermal breakdown. Turns VTT output to OFF when the thermal shutdown protection circuit activates. This thermal shutdown protection circuit is originally intended to protect the IC itself. It is therefore requested to conduct a thermal design not to exceed the temperature under which the thermal shutdown protection circuit can work. 18. The use in the strong electromagnetic field may sometimes cause malfunction, to which care must be taken. In the event that load containing a large inductance component is connected to the output terminal, and generation of back-EMF at the start-up and when output is turned OFF is assumed, it is requested to insert a protection diode. 19. In the event that load containing a large inductance component is (Example) connected to the output terminal, and generation of back-EMF at the OUTPUT PIN start-up and when output is turned OFF is assumed, it is requested to insert a protection diode. 20. We are certain that examples of applied circuit diagrams are recommendable, but you are requested to thoroughly confirm the characteristics before using the IC. In addition, when the IC is used with the external circuit changed, decide the IC with sufficient margin provided while consideration is being given not only to static characteristics but also variations of external parts and our IC including transient characteristics. 8/10 ●POWER DISSIPATION ◎SOP8(BD3537F) [mW] 700 Power Dissipation [Pd] 600 (1) 690mW (1) 70mm×70mm×1.6mm Glass-epoxy PCB θj-c=181℃/W (2) With no heat sink θj-a=222℃/W 500 (2) 560mW 400 100℃ 300 200 100 0 0 25 50 75 100 125 150 [℃] Ambient Temperature [Ta] ●Ordering part number B D 3 5 3 7 F Package Type Part Number E ― 2 E2 Emboss tape reel Pin 1 opposite draw-out side ・F : SOP8 ・BD3537 SOP8 <Dimension> <Tape and Reel information> 1 4 1234 1234 1234 1Pin 1234 (Unit:mm) 1234 Reel 1234 1234 1.27 0.4±0.1 E2 (The direction is the 1pin of product is at the upper left when you hold reel on the left hand and you pull out the tape on the right hand) 0.15±0.1 0.1 1234 1.5±0.1 0.11 6.2±0.3 4.4±0.2 0.3Min. 5 Embossed carrier tape 2500pcs Direction of feed 5.0±0.2 8 Tape Quantity Direction of feed ※When you order , please order in times the amount of package quantity. 9/10 10/10 Catalog No.08T425A '08.10 ROHM © Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. 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