BLF4G22-100; BLF4G22S-100 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1: Typical performance Tcase = 25 °C; in a common source class-AB test circuit; IDq = 900 mA; typical values Mode of operation f (MHz) 2-carrier W-CDMA [1] [1] f1 = 2135; f2 = 2145 VDS (V) PL (W) Gp (dB) 28 25 (AV) 13.5 ηD (%) IMD3 (dBc) ACPR (dBc) 26 −37 −41 10 MHz carrier spacing PAR 7 dB at 0.01 % probability on CCDF, 3GPP test model 1, 1 to 64 DPCH. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features ■ Typical 2-Carrier W-CDMA performance at a supply voltage of 28 V and an IDq of 900 mA: ◆ Load power = 25 W (AV) ◆ Gain = 13.5 dB (typ) ◆ Efficiency = 26 % (typ) ◆ ACPR = −41 dBc (typ) ◆ IMD3 = −37 dBc (typ) ■ Easy power control ■ Integrated ESD protection ■ Excellent ruggedness > 10 : 1 VSWR at 100 W CW ■ High efficiency ■ High peak power capability (> 150 W) ■ Excellent thermal stability ■ Designed for broadband operation (2000 MHz to 2200 MHz) ■ Internally matched for ease of use BLF4G22-100; BLF4G22S-100 Philips Semiconductors UHF power LDMOS transistor 1.3 Applications ■ RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 MHz to 2200 MHz frequency range. 2. Pinning information Table 2: Pinning Pin Description Simplified outline Symbol BLF4G22-100 (SOT502A) 1 drain 2 gate 3 1 1 3 [1] source 2 2 3 sym039 BLF4G22S-100 (SOT502B) 1 drain 2 gate 3 1 1 3 [1] source 2 2 3 sym039 [1] Connected to flange 3. Ordering information Table 3: Ordering information Type number Package Name Description Version BLF4G22-100 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A BLF4G22S-100 - earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage −0.5 +15 V ID drain current - 12 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C 9397 750 14338 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 2 of 14 BLF4G22-100; BLF4G22S-100 Philips Semiconductors UHF power LDMOS transistor 5. Thermal characteristics Table 5: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-case) thermal resistance from junction to case Tcase = 80 °C; PL = 25 W; 2-carrier W-CDMA - 0.76 0.85 K/W 6. Characteristics Table 6: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.9 mA Min Typ Max Unit 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 180 mA 2.5 3.1 3.5 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 900 mA 2.7 3.2 3.7 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 3 µA IDSX drain cut-off current VGS = VGS(th) + 6 V; VDS = 10 V 27 30 - A IGSS gate leakage current VGS = 15 V; VDS = 0 V - - 300 nA gfs transfer conductance VDS = 10 V; ID = 10 A - 9.0 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 6 V; ID = 6 A - 0.09 - Ω Crs feedback capacitance - 2.5 - pF VGS = 0 V; VDS = 28 V; f = 1 MHz 7. Application information Table 7: Application information Mode of operation: 2-Carrier W-CDMA, PAR 7 dB at 0.01 % probability on CCDF, 3GPP test model 1, 1-64 DPCH, f1 = 2112.5 MHz, f2 = 2122.5 MHz, f3 = 2157.5 MHz, f4 = 2167.5 MHz. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 25 W 12.5 13.5 - dB IRL input return loss PL(AV) = 25 W 9 15 - dB ηD drain efficiency PL(AV) = 25 W 24 26 - % IMD3 third order intermodulation distortion PL(AV) = 25 W - −37 −35 dBc ACPR adjacent channel power ratio PL(AV) = 25 W - −41 −39 dBc 7.1 Ruggedness in class-AB operation The BLF4G22-100/BLF4G22S-100 are capable of withstanding a load mismatch corresponding to VSWR > 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 900 mA; PL = 100 W (CW). 9397 750 14338 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 3 of 14 BLF4G22-100; BLF4G22S-100 Philips Semiconductors UHF power LDMOS transistor 001aac270 40 ηD (%) Gp (dB) 30 −15 ηD IMD3 ACPR, IMD3 (dBc) −25 ACPR −35 20 Gp −45 10 0 0 10 20 30 −55 40 50 PL(AV) (W) (1) 2-carrier W-CDMA performance; VDS = 28 V, IDq = 900 mA; f1 = 2135 MHz and f2 = 2145 MHz; PAR = 7 dB at 0.01 % on CCDF; 3GPP TM1, 64 DPCH. Fig 1. 2-carrier W-CDMA ACPR, IMD3, power gain and drain efficiency as functions of average load power; typical values Table 8: Typical impedance values VDS = 28 V; IDq = 900 mA; PL = 25 W (AV); Tcase = 25 °C. Frequency (MHz) ZS (Ω) ZL (Ω) 2110 2.2 + j4.8 1.5 − j2.6 2140 2.2 + j4.6 1.5 − j2.4 2170 2.2 + j4.5 1.4 − j2.2 Table 9: Code [1] RF gain grouping Gain (dB) [2] Min Max A 12.5 13.0 B 13.0 13.5 C 13.5 14.0 D 14.0 14.5 E 14.5 - [1] 0.2 dB overlap is allowed for measurement reproducibility. [2] For 2-carrier W-CDMA at f1 = 2157 MHz, f2 = 2167.5 MHz. 9397 750 14338 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 4 of 14 BLF4G22-100; BLF4G22S-100 Philips Semiconductors UHF power LDMOS transistor 001aac271 16 001aac272 −20 IMD3 (dBc) Gp (dB) (1) (2) (3) −30 (4) (5) 14 (1) −40 (4) (5) −50 12 (2) −60 10 1 102 10 103 (3) −70 1 102 10 PL(PEP) (W) 103 PL(PEP) (W) (1) IDq = 600 mA (1) IDq = 600 mA (2) IDq = 750 mA (2) IDq = 750 mA (3) IDq = 900 mA (3) IDq = 900 mA (4) IDq = 1050 mA (4) IDq = 1050 mA (5) IDq = 1200 mA (5) IDq = 1200 mA Two-tone measurement; Two-tone measurement; VDS = 28 V; f1 = 2140.0 MHz; f2 = 2140.1 MHz VDS = 28 V; f1 = 2140.0 MHz; f2 = 2140.1 MHz Fig 2. Power gain as a function of peak envelope load power; typical values 001aac273 16 Fig 3. Third order intermodulation distortion as a function of peak envelope power; typical values 001aac274 1011 t50% (hr) Gp (dB) 1010 14 109 P1dB = 135 W (= 52.1 dBm) 108 P3dB = 161 W (= 51.3 dBm) 107 12 10 0 40 80 120 160 200 PL (W) 106 100 140 180 220 260 Tj (°C) ton = 8 µs toff = 1 ms Fig 4. Pulsed peak power capability; typical values Fig 5. t50% failures due to electromigration as a function of junction temperature 9397 750 14338 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 5 of 14 xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x C12 VG C13 VD R1 Philips Semiconductors 8. Test information 9397 750 14338 Product data sheet C1 C11 C2 C14 C4 Rev. 01 — 10 January 2006 C3 L7 C15 C8 C9 C10 C6 L6 DUT C7 L1 L10 L2 L3 C16 L11 L13 L12 L4 L5 L8 001aac275 See Table 10 for list of components Fig 6. Test circuit for operation at 2.14 GHz UHF power LDMOS transistor 6 of 14 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. L9 BLF4G22-100; BLF4G22S-100 L14 C5 xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x Philips Semiconductors 9397 750 14338 Product data sheet 50 mm C13 C1 VG R1 C12 C11 C2 Rev. 01 — 10 January 2006 C3 C4 C14 C15 L7 L14 C8 C9 C10 C6 L6 C16 C7 L1 L2 L3 L10 L11 L4 L5 L12 L13 L8 L9 The components are situated on double copper-clad Taconic RF35 Printed-Circuit Board (PCB) (εr = 3.5); thickness = 0.76 mm. The other side is unetched and serves as a ground plane. See Table 10 for list of components. Fig 7. Component layout for 2.14 GHz test circuit UHF power LDMOS transistor 7 of 14 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. 001aac276 BLF4G22-100; BLF4G22S-100 C5 75 mm BLF4G22-100; BLF4G22S-100 Philips Semiconductors UHF power LDMOS transistor Table 10: List of components (see Figure 6 and Figure 7 ) Component Description Value C1, C2, C11 tantalum capacitor 10 µF; 35 V C3 multilayer ceramic chip capacitor C4, C10 multilayer ceramic chip capacitor C5, C8, C14, C15 multilayer ceramic chip capacitor C6 multilayer ceramic chip capacitor [2] 0.6 pF C7 multilayer ceramic chip capacitor [1] 4.7 pF C9 multilayer ceramic chip capacitor 220 nF; 50 V C12 electrolytic capacitor 220 µF; 63 V C13 tantalum capacitor C16 multilayer ceramic chip capacitor [3] 7.5 pF L1 stripline [4] Z0 = 50 Ω (W × L) 32.3 mm × 1.7 mm stripline [4] Z0 = 50 Ω (W × L) 2.2 mm × 1.7 mm L3 stripline [4] Z0 = 24 Ω (W × L) 2.3 mm × 4.8 mm L4 stripline [4] Z0 = 15 Ω (W × L) 2.4 mm × 8 mm stripline [4] Z0 = 9.5 Ω (W × L) 9.3 mm × 14 mm stripline [4] Z0 = 60 Ω (W × L) 4 mm × 1.2 mm L7 stripline [4] Z0 = 60 Ω (W × L) 14.5 mm × 1.2 mm L8 stripline [4] Z0 = 8.2 Ω (W × L) 9.3 mm × 16.8 mm stripline [4] Z0 = 5.5 Ω (W × L) 3 mm × 25.8 mm stripline [4] Z0 = 50 Ω (W × L) 11 mm × 1.7 mm L11 stripline [4] Z0 = 50 Ω (W × L) 9.5 mm × 1.7 mm L12 stripline [4] Z0 = 34 Ω (W × L) 3 mm × 3 mm stripline [4] Z0 = 50 Ω (W × L) 12.7 mm × 1.7 mm L14 stripline [4] Z0 = 43 Ω (W × L) 13.5 mm × 2.1 mm R1 SMD resistor L2 L5 L6 L9 L10 L13 4.7 µF; 25 V [1] 8.2 pF 1.5 µF; 50 V 4.7 µF; 50 V 4.7 Ω; 0.1 W [1] American Technical Ceramics type 100B or capacitor of same quality. [2] American Technical Ceramics type 100A or capacitor of same quality. [3] American Technical Ceramics type 180R or capacitor of same quality. [4] Striplines are on a double copper-clad Taconic RF35 PCB (εr = 3.5); thickness = 0.76 mm. 9397 750 14338 Product data sheet Dimensions © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 8 of 14 BLF4G22-100; BLF4G22S-100 Philips Semiconductors UHF power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 8. Package outline SOT502A 9397 750 14338 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 9 of 14 BLF4G22-100; BLF4G22S-100 Philips Semiconductors UHF power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502B Fig 9. Package outline SOT502B 9397 750 14338 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 10 of 14 BLF4G22-100; BLF4G22S-100 Philips Semiconductors UHF power LDMOS transistor 10. Abbreviations Table 11: Abbreviations Acronym Description 3GPP Third Generation Partnership Project CW Continuous Wave CCDF Complementary Cumulative Distribution Function DPCH Dedicated Physical Channels IDq quiescent drain current LDMOS Laterally Diffused Metal Oxide Semiconductor PAR Peak-to-Average Ratio PEP Peak Envelope Power RF Radio Frequency TM1 Test Model 1 VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 9397 750 14338 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 11 of 14 Philips Semiconductors BLF4G22-100; BLF4G22S-100 UHF power LDMOS transistor 11. Revision history Table 12: Revision history Document ID Release date BLF4G22-100_4G22 20060110 S-100_1 Data sheet status Change notice Doc. number Supersedes Product data sheet - 9397 750 14338 - 9397 750 14338 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 12 of 14 BLF4G22-100; BLF4G22S-100 Philips Semiconductors UHF power LDMOS transistor 12. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 15. Trademarks 14. Disclaimers Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 14338 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 10 January 2006 13 of 14 Philips Semiconductors BLF4G22-100; BLF4G22S-100 UHF power LDMOS transistor 17. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information . . . . . . . . . . . . . . . . . . . . 13 © Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 10 January 2006 Document number: 9397 750 14338 Published in The Netherlands