PHILIPS BLF872

BLF872
UHF power LDMOS transistor
Rev. 01 — 20 February 2006
Product data sheet
1. Product profile
1.1 General description
A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 250 W broadband over the full UHF band from
470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this
device makes it ideal for digital transmitter applications.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
■ Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a
quiescent drain current IDq = 2 × 0.9 A:
◆ Peak envelope power load power PL(PEP) = 300 W
◆ Gain Gp = 15 dB
◆ Drain efficiency ηD = 43 %
◆ Third order intermodulation distortion IMD3 = −28 dBc
■ Typical DVB performance at 858 MHz, a drain-source voltage VDS of 32 V and a
quiescent drain current IDq = 2 × 0.9 A:
◆ Average output power PL(AV) = 70 W
◆ Gain Gp = 15 dB
◆ Drain efficiency ηD = 30 %
◆ Third order intermodulation distortion IMD3 = −28 dBc (4.3 MHz from center
frequency)
■ Advanced flange material for optimum thermal behavior and reliability
■ Excellent ruggedness
■ High power gain
■ Designed for broadband operation (UHF band)
■ Excellent reliability
■ Internal input and output matching for high gain and optimum broadband operation
■ Source on underside eliminates DC isolators, reducing common-mode inductance
■ Easy power control
BLF872
Philips Semiconductors
UHF power LDMOS transistor
1.3 Applications
■ Communication transmitter applications in the UHF band
■ Industrial applications in the UHF band
1.4 Quick reference data
Table 1:
Quick reference data
Typical RF performance at VDS = 32 V and Th = 25 °C in a common-source narrowband 860 MHz
test circuit. [1]
f
(MHz)
CW, class AB
860
300
-
-
14
55
-
2-tone, class AB
f1 = 860;
f2 = 860.1
-
300
-
15
42
−28
PAL BG
860 (ch69)
300 (peak sync.) [2] -
-
15
42
-
DVB-T (8K OFDM)
858
-
70
15
30
−28 [3]
[1]
PL
(W)
PL(PEP) PL(AV)
(W)
(W)
ηD
(%)
Mode of operation
-
Gp
(dB)
IMD3
(dBc)
Th is the heatsink temperature.
[2]
Black video signal, sync expansion: input sync = 33 %; output sync ≥ 27 %.
[3]
Measured dBc at 4.3 MHz from center frequency.
2. Pinning information
Table 2:
Pinning
Description
Pin
drain 1
1
drain 2
2
gate 1
3
gate 2
4
source
5
[1]
Simplified outline
1
2
5
[1]
3
4
Connected to flange.
3. Ordering information
Table 3:
Ordering information
Type number
BLF872
Package
Name
Description
-
flanged LDMOST ceramic package; 2 mounting holes; 4 SOT800-1
leads
BLF872_1
Product data sheet
Version
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 February 2006
2 of 16
BLF872
Philips Semiconductors
UHF power LDMOS transistor
4. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
65
V
VGS
gate-source voltage
-
±13
V
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
200
°C
Typ
Unit
0.32
K/W
0.4
K/W
5. Thermal characteristics
Table 5:
Thermal characteristics
Symbol
Parameter
Conditions
thermal resistance from junction to case
Th = 25 °C
[1]
thermal resistance from junction to heatsink
Th = 25 °C
[1] [2]
Rth(j-c)
Rth(j-h)
[1]
Th is the heatsink temperature.
[2]
Rth(j-h) is dependent on the applied thermal compound and clamping/mounting of the device.
6. Characteristics
Table 6:
Characteristics
Tj = 25 °C unless otherwise specified.
Conditions [1]
Min
Typ
Max
Unit
drain-source breakdown voltage
VGS = 0 V; ID = 5 mA
65
-
-
V
gate-source threshold voltage
VDS = 20 V; ID = 250 mA
5.2
-
6.2
V
IDSS
drain leakage current
VGS = 0 V; VDS = 32 V
-
-
2.2
µA
IDSX
drain cut-off current
VGS = VGSth + 6 V; VDS = 10 V
-
41
-
A
Symbol
Parameter
V(BR)DSS
VGSth
IGSS
gate leakage current
VGS = 10 V; VDS = 0 V
-
-
40
nA
gfs
forward transconductance
VGS = 20 V; ID = 16 A
-
10
-
S
RDSon
drain-source on-state resistance
VGS = VGSth + 6 V; ID = 9 A
input capacitance
Ciss
-
80
-
mΩ
VGS = 0 V; VDS = 32 V; f = 1 MHz
[2]
-
200
-
pF
-
70
-
pF
-
2.5
-
pF
Coss
output capacitance
VGS = 0 V; VDS = 32 V; f = 1 MHz
[2]
Crss
reverse transfer capacitance
VGS = 0 V; VDS = 32 V; f = 1 MHz
[2]
[1]
ID is the drain current.
[2]
Capacitance values without internal matching.
BLF872_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 February 2006
3 of 16
BLF872
Philips Semiconductors
UHF power LDMOS transistor
001aad743
200
Coss
(pF)
150
100
50
0
0
10
20
30
40
50
VDS (V)
VGS = 0 V; f = 1 MHz.
Fig 1. Output capacitance Coss as a function of drain-source voltage VDS; typical values
per section; capacitance value without internal matching
7. Application information
Table 7:
RF performance in a common-source 860 MHz narrowband test circuit
Th = 25 °C unless otherwise specified. [1]
Mode of operation
f
VDS
IDq
PL(PEP)
PL(AV)
Gp
ηD
IMD3
∆Gp
(MHz)
(V)
(A)
(W)
(W)
(dB)
(%)
(dBc)
(dB)
2-tone, class AB
f1 = 860;
f2 = 860.1
32
2 × 0.9
300
-
> 14
> 40
≤ −25
≤1
DVB-T (8K OFDM)
858
32
2 × 0.9
-
70
> 14
> 26
≤ −25
-
[1]
Sync. compression: input sync. ≥ 33 %, output sync. 27 %.
BLF872_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 February 2006
4 of 16
BLF872
Philips Semiconductors
UHF power LDMOS transistor
001aad744
16
Gp
Gp
(dB)
60
ηD, ηadd
(%)
ηD
14
40
ηadd
12
20
0
400
10
0
100
200
300
PL (W)
VDS = 32 V; f = 860 MHz; IDq = 2 × 0.9 A; Th = 25 °C.
Fig 2. CW power gain Gp, drain efficiency ηD and power added efficiency ηadd as a function of output power PL;
typical values
001aad745
16
Gp
(dB)
IMD
(dBc)
Gp
−20
14
001aad746
16
0
Gp
(dB)
ηD
−40
12
−60
200
250
PL(AV) (W)
10
IMD5
10
0
50
100
150
VDS = 32 V; f1 = 860 MHz; f2 = 860.1 MHz;
IDq = 2 × 0.9 A; Th = 25 °C.
20
0
50
100
150
0
200
250
PL(AV) (W)
VDS = 32 V; f1 = 860 MHz; f2 = 860.1 MHz;
IDq = 2 × 0.9 A; Th = 25 °C.
Fig 3. 2-tone power gain Gp and intermodulation
distortion IMD as a function of average output
power PL(AV); typical values
Fig 4. 2-tone power gain Gp, drain efficiency ηD and
power added efficiency ηadd as a function of
average output power PL(AV); typical values
BLF872_1
Product data sheet
40
ηadd
IMD3
12
ηD, ηadd
(%)
Gp
14
60
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 February 2006
5 of 16
BLF872
Philips Semiconductors
UHF power LDMOS transistor
001aad748
20
0
IMD
(dBc)
Gp
(dB)
16
Gp
001aad747
20
50
ηD, ηadd
(%)
Gp
(dB)
−10
16
−20
12
40
Gp
ηadd
12
30
IMD3HI
ηD
−30
8
20
−40
4
10
−50
120
160
PL(AV) (W)
0
8
IMD3LO
4
0
0
40
80
IMD at ±4.3 MHz from frequency center.
0
80
0
120
160
PL(AV) (W)
VDS = 32 V; f = 858 MHz; IDq = 2 × 0.9 A; Th = 25 °C.
Fig 5. DVB-T (8K OFDM) power gain Gp and third
order intermodulation distortion
(high-frequency component IMD3HI and
low-frequency component IMD3LO) as a
function of average output power PL(AV); typical
values
Fig 6. DVB-T (8K OFDM) power gain Gp, drain
efficiency ηD and power added efficiency ηadd
as a function of average output power PL(AV);
typical values
BLF872_1
Product data sheet
40
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Rev. 01 — 20 February 2006
6 of 16
BLF872
Philips Semiconductors
UHF power LDMOS transistor
7.1 Broadband operation data
Measured in a common-source broadband (470 MHz to 860 MHz) test circuit.
001aad749
300
P
(W)
001aad750
20
80
ηD
(%)
Gp
(dB)
Po(sync)M
Gp
15
60
200
ηD
10
40
5
20
PL(AV)
100
0
400
500
600
700
800
900
f (MHz)
0
400
500
600
700
0
800
900
f (MHz)
VDS = 32 V; IDq = 2 × 0.9 A; Th = 25 °C.
VDS = 32 V; IDq = 2 × 0.9 A; Th = 25 °C.
Black video signal, sync expansion:
input sync = 33 %; output sync ≥ 27 %.
Black video signal, sync expansion:
input sync = 33 %; output sync ≥ 27 %.
Fig 7. Analog TV (black video signal) peak sync
output power Po(sync)M and average output
power PL(AV) as a function of frequency f
Fig 8. Analog TV (black video signal) power gain Gp
and drain efficiency ηD as a function of
frequency f
7.2 Ruggedness in class-AB operation
The BLF872 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases under the following conditions: VDS = 32 V; f = 860 MHz at rated
power.
Measured in a common-source broadband (470 MHz to 860 MHz) test circuit.
BLF872_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 February 2006
7 of 16
BLF872
Philips Semiconductors
UHF power LDMOS transistor
7.3 Reliability
001aad751
107
Years
106
(1)
(2)
(3)
(4)
(5)
(6)
105
104
103
102
(7)
(8)
(9)
(10)
(11)
10
0
4
8
12
16
20
ID (A)
TTF; 0.1 % failure fraction; best estimate values.
(1) Tj = 100 °C
(2) Tj = 110 °C
(3) Tj = 120 °C
(4) Tj = 130 °C
(5) Tj = 140 °C
(6) Tj = 150 °C
(7) Tj = 160 °C
(8) Tj = 170 °C
(9) Tj = 180 °C
(10) Tj = 190 °C
(11) Tj = 200 °C
Fig 9. BLF872 electromigration (ID, total device)
8. Test information
Table 8:
List of components
For test circuit, see Figure 10, 11 and 12.
Component
Description
Value
B1, B2 balun
semi rigid coax
25 Ω
Remarks
EZ90-25-TP
C1
multilayer ceramic chip capacitor
12 pF
[1]
C2
multilayer ceramic chip capacitor
10 pF
[1]
C3, C5
multilayer ceramic chip capacitor
5.6 pF
[1]
C4
multilayer ceramic chip capacitor
6.8 pF
[1]
C6, C7
multilayer ceramic chip capacitor
2.0 pF
[2]
C8
multilayer ceramic chip capacitor
18 pF
[1]
C9, C10
multilayer ceramic chip capacitor
0.5 pF
[2]
C11, C12
multilayer ceramic chip capacitor
100 pF
[1]
C13, C14
multilayer ceramic chip capacitor
100 pF
[2]
BLF872_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 February 2006
8 of 16
BLF872
Philips Semiconductors
UHF power LDMOS transistor
Table 8:
List of components …continued
For test circuit, see Figure 10, 11 and 12.
Component
Description
Value
C15, C16
ceramic capacitor
15 nF
C17, C18
electrolytic capacitor
470 µF
C20
multilayer ceramic chip capacitor
13 pF
C21
tekelec trimmer
0.6 pF to 4.5 pF
C22
multilayer ceramic chip capacitor
3.9 pF
[3]
C23
multilayer ceramic chip capacitor
10 pF
[3]
C24, C32
multilayer ceramic chip capacitor
3.0 pF
[3]
C25
multilayer ceramic chip capacitor
30 pF
[3]
C26, C27
multilayer ceramic chip capacitor
100 pF
[3]
C28, C29
ceramic capacitor
15 nF
C30, C31
electrolytic capacitor
10 µF
L1
stripline
[4]
(W × L) 24 mm × 13.1 mm
stripline
[4]
(W × L) 10 mm × 17.7 mm
stripline
[4]
(W × L) 5 mm × 16.5 mm
L4
stripline
[4]
(W × L) 2.4 mm × 15 mm
L5
stripline
[4]
(W × L) 3.5 mm × 43 mm
stripline
[4]
(W × L) 2 mm × 43.3 mm
stripline
[4]
(W × L) 24 mm × 10 mm
L11
stripline
[4]
(W × L) 10 mm × 15 mm
L12
stripline
[4]
(W × L) 3 mm × 31.5 mm
L13
stripline
[4]
(W × L) 2 mm × 43.3 mm
R1
resistor
5.6 Ω
R2
resistor
5.6 Ω
R3
resistor
100 Ω
R4
resistor
100 Ω
R5
potentiometer
2 kΩ
R6
potentiometer
2 kΩ
L2
L3
L6
L10
Remarks
[3]
[1]
American technical ceramics type 180R or capacitor of same quality.
[2]
American technical ceramics type 100B or capacitor of same quality.
[3]
American technical ceramics type 100A or capacitor of same quality.
[4]
PCB: Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 µm.
BLF872_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 February 2006
9 of 16
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L5
Philips Semiconductors
BLF872_1
Product data sheet
+VG1(test)
C9
C30
R5
L1
L10
C13
C15
C17
R3
Rev. 01 — 20 February 2006
C28
R1
50 Ω
+VD1(test)
L2
L11
C24
C26
C11
C6
L3
L12
L13
L6
C25
L13
R2
C27
C22
C21
C20
C1
C2
C3
C4
50 Ω
C8
L4
C23
B2
B1
C5
L6
L12
C32
L3
C29
C7
C12
+VD2(test)
L11
L2
C14
R4
L10
C16
C18
L1
R6
C31
C10
L5
BLF872
Fig 10. Class-AB common-source broadband test circuit; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages
001aad752
UHF power LDMOS transistor
10 of 16
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
+VG2(test)
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Philips Semiconductors
BLF872_1
Product data sheet
Rev. 01 — 20 February 2006
80 mm
95 mm
95 mm
001aad753
BLF872
UHF power LDMOS transistor
11 of 16
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Fig 11. Printed-circuit board for class-AB broadband test circuit
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Philips Semiconductors
BLF872_1
Product data sheet
32 mm
+
C30
+VG1(test)
+VD1(test)
L5
C9
15 mm
C15
R5
C13
C17
L10
C28
L1
+
R3
13.1 mm
L6
strip
(+32 V supply)
R1
B2
L13
L2
Rev. 01 — 20 February 2006
L11
L3
L12
C26
C23
C24
C25
C20
C22
C11
C6
C5
L4
C8
BLF872
C32
C27
C3 C4
C1
C21
C7
C12
C2
L12
L3
C29
3.5 mm
L2
1.5 mm
broadband
BLF872 input
R2
R4
L6
L10
L1
15 mm
+
+VG2(test)
C10
L5
C16
+VD2(test)
32 mm
001aad833
BLF872
UHF power LDMOS transistor
12 of 16
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Fig 12. Component layout for class-AB broadband test circuit
C18
C14
R6
C31
B1
+
10 mm
L13
L11
BLF872
Philips Semiconductors
UHF power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads
SOT800-1
D
A
F
y
D1
U1
B
q
C
1
c
w1 M A
2
H U2
M
B
M
E
P
E1
5
L
3
4
A
b
w2 M C
Q
M
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
E
E1
e
F
H
L
p
Q
q
U1
U2
w1
w2
y
mm
6.6
6.2
10.55
10.45
0.15
0.10
30.5
29.9
31.1
30.9
14.6
14.4
15.3
15.1
12.7
2.26
2.00
22.8
21.8
3.7
3.3
3.56
3.49
3.4
3.1
38.5
44.5
44.2
15.4
15.0
0.25
0.25
0.05
0.260 0.415 0.006 1.201 1.224 0.575 0.602
0.244 0.411 0.004 1.177 1.216 0.567 0.594
0.5
0.089 0.898 0.146 0.140 0.134
1.752 0.606
1.516
0.079 0.858 0.130 0.137 0.122
1.740 0.591
0.01
0.01
0.002
inches
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
05-06-02
05-06-07
SOT800-1
Fig 13. Package outline SOT800-1
BLF872_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 February 2006
13 of 16
BLF872
Philips Semiconductors
UHF power LDMOS transistor
10. Abbreviations
Table 9:
Abbreviations
Acronym
Description
CDMA
Code Division Multiple Access
CW
Continuous Wave
DVB
Digital Video Broadcast
EDGE
Enhanced Data rates for GSM Evolution
ESR
Equivalent Series Resistance
EVM
Error Vector Magnitude
GSM
Global System for Mobile communications
IMD
InterModulation Distortion
LDMOS
Laterally Diffused Metal Oxide Semiconductor
OFDM
Orthogonal Frequency Division Multiplexing
PCB
Printed-Circuit Board
PEP
Peak Envelope Power
RF
Radio Frequency
SMD
Surface Mount Device
TTF
Time To Failure
VSWR
Voltage Standing Wave Ratio
11. Revision history
Table 10:
Revision history
Document ID
Release date
Data sheet status
Change notice
Doc. number
Supersedes
BLF872_1
20060220
Product data sheet
-
-
-
BLF872_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 February 2006
14 of 16
BLF872
Philips Semiconductors
UHF power LDMOS transistor
12. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
13. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
15. Trademarks
14. Disclaimers
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
BLF872_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 February 2006
15 of 16
BLF872
Philips Semiconductors
UHF power LDMOS transistor
17. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
7.1
7.2
7.3
8
9
10
11
12
13
14
15
16
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 4
Broadband operation data . . . . . . . . . . . . . . . . 7
Ruggedness in class-AB operation. . . . . . . . . . 7
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Contact information . . . . . . . . . . . . . . . . . . . . 15
© Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 20 February 2006
Document number: BLF872_1
Published in The Netherlands