BLC6G20-140; BLC6G20LS-140 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f VDS PL(AV) Gp ηD IMD3 ACPR (MHz) (V) (W) (dB) (%) (dBc) (dBc) 1930 to 1990 28 35.5 16.5 31 −37 [1] −40 [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features ■ Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 1000 mA: ◆ Average output power = 35.5 W ◆ Power gain = 16.5 dB (typ) ◆ Efficiency = 31 % ◆ IMD3 = −37 dBc ◆ ACPR = −40 dBc ■ Easy power control ■ Integrated ESD protection ■ Excellent ruggedness ■ High efficiency ■ Excellent thermal stability ■ Designed for broadband operation (1800 MHz to 2000 MHz) ■ Internally matched for ease of use BLC6G20-140; BLC6G20LS-140 Philips Semiconductors UHF power LDMOS transistor 1.3 Applications ■ RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range. 2. Pinning information Table 2: Pinning Pin Description Simplified outline Symbol BLC6G20-140 (SOT895-1) 1 drain 2 gate 3 1 1 3 [1] source 2 2 3 sym112 BLC6G20LS-140 (SOT896-1) 1 drain 2 gate 3 1 1 3 [1] source 2 2 3 sym112 [1] Connected to flange 3. Ordering information Table 3: Ordering information Type number BLC6G20-140 Package Name Description Version - plastic flanged cavity package; 2 mounting slots; 2 leads SOT895-1 plastic earless flanged cavity package; 2 leads SOT896-1 BLC6G20LS-140 - 4. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage −0.5 +13 V ID drain current - <tbd> A Tstg storage temperature −65 +150 °C Tj junction temperature - 225 °C BLC6G20-140_6G20LS-140_1 Objective data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 30 January 2006 2 of 9 BLC6G20-140; BLC6G20LS-140 Philips Semiconductors UHF power LDMOS transistor 5. Thermal characteristics Table 5: Thermal characteristics Symbol Parameter Rth(j-case) thermal resistance Tcase = 80 °C; BLC6G20-140 from junction to case PL = 35.5 W BLC6G20LS-140 Conditions Type Min Typ Max Unit <tbd> <tbd> <tbd> K/W <tbd> 0.43 0.52 K/W 6. Characteristics Table 6: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.5 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 216 mA <tbd> 2 VGSq gate-source quiescent voltage VDS = 28 V; ID = 950 mA <tbd> <tbd> <tbd> V <tbd> V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 5 µA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 32 39 - A IGSS gate leakage current VGS = 13 V; VDS = 0 V - - 450 nA gfs forward transconductance VDS = 10 V; ID = 10.8 A - 13.5 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 7.56 A - 0.07 - Ω Crs feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz - <tbd> - pF 7. Application information Table 7: Application information Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 1932.5 MHz; f2 = 1942.5 MHz; f3 = 1977.5 MHz; f4 = 1987.5 MHz; RF performance at VDS = 28 V; IDq = 1000 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit Symbol Parameter Conditions Min Typ Max Unit - PL(AV) average output power 35.5 - W Gp power gain PL(AV) = 35.5 W <tbd> 16.5 - dB IRL input return loss PL(AV) = 35.5 W - ηD drain efficiency PL(AV) = 35.5 W <tbd> 31 IMD3 third order intermodulation distortion PL(AV) = 35.5 W - −37 <tbd> dBc ACPR adjacent channel power ratio PL(AV) = 35.5 W - −40 <tbd> dBc <tbd> <tbd> dB - % 7.1 Ruggedness in class-AB operation The BLC6G20-140 and BLC6G20LS-140 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1000 mA; PL = 140 W (CW); f = 1990 MHz. BLC6G20-140_6G20LS-140_1 Objective data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 30 January 2006 3 of 9 BLC6G20-140; BLC6G20LS-140 Philips Semiconductors UHF power LDMOS transistor 8. Package outline Plastic flanged cavity package; 2 mounting slots; 2 leads SOT895-1 D F A D1 U1 B q C c 1 L H w1 M A M p U2 B M E E1 3 A 2 w2 b 0 5 M C Q M 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b c D D1 E E1 F H L p Q q U1 U2 w1 w2 mm 4.1 3.3 12.83 12.57 0.17 0.14 19.9 19.7 20.42 20.12 9.53 9.27 9.78 9.53 1.14 0.89 19.94 18.92 5.3 4.5 3.38 3.12 1.75 1.50 27.94 34.16 33.91 9.91 9.65 0.25 0.6 1.345 0.390 0.161 0.505 0.0065 0.785 0.804 0.375 0.385 0.045 0.785 0.209 0.133 0.069 1.100 1.335 0.380 0.130 0.495 0.0055 0.775 0.792 0.365 0.375 0.035 0.745 0.177 0.123 0.059 0.01 0.023 inches OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-06-22 05-06-28 SOT895-1 Fig 1. Package outline SOT895-1 BLC6G20-140_6G20LS-140_1 Objective data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 30 January 2006 4 of 9 BLC6G20-140; BLC6G20LS-140 Philips Semiconductors UHF power LDMOS transistor Plastic earless flanged cavity package; 2 leads SOT896-1 D F A 3 D1 D c U1 1 L H U2 E E1 2 w2 b 0 5 M D Q M 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b c D D1 E E1 F H L Q U1 U2 w2 mm 4.1 3.3 12.83 12.57 0.17 0.14 19.9 19.7 20.42 20.12 9.53 9.27 9.78 9.53 1.14 0.89 19.94 18.92 5.3 4.5 1.75 1.50 20.70 20.45 9.91 9.65 0.6 inches 0.161 0.505 0.0065 0.785 0.804 0.375 0.385 0.045 0.785 0.209 0.069 0.815 0.390 0.023 0.130 0.495 0.0055 0.775 0.792 0.365 0.375 0.035 0.745 0.177 0.059 0.805 0.380 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-06-22 05-06-28 SOT896-1 Fig 2. Package outline SOT896-1 BLC6G20-140_6G20LS-140_1 Objective data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 30 January 2006 5 of 9 Philips Semiconductors BLC6G20-140; BLC6G20LS-140 UHF power LDMOS transistor 9. Abbreviations Table 8: Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CDMA Code Division Multiple Access CW Continuous Wave DPCH Dedicated Physical CHannel EDGE Enhanced Data rates for GSM Evolution GSM Global System for Mobile communications LDMOS Laterally Diffused Metal Oxide Semiconductor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access BLC6G20-140_6G20LS-140_1 Objective data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 30 January 2006 6 of 9 Philips Semiconductors BLC6G20-140; BLC6G20LS-140 UHF power LDMOS transistor 10. Revision history Table 9: Revision history Document ID Release date BLC6G20-140_6G20LS-140_1 20060130 Data sheet status Change notice Doc. number Supersedes Objective data sheet - - BLC6G20-140_6G20LS-140_1 Objective data sheet - © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 30 January 2006 7 of 9 Philips Semiconductors BLC6G20-140; BLC6G20LS-140 UHF power LDMOS transistor 11. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 14. Trademarks 13. Disclaimers Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 15. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] BLC6G20-140_6G20LS-140_1 Objective data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 30 January 2006 8 of 9 Philips Semiconductors BLC6G20-140; BLC6G20LS-140 UHF power LDMOS transistor 16. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . General description. . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . Pinning information . . . . . . . . . . . . . . . . . . . . . . Ordering information . . . . . . . . . . . . . . . . . . . . . Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . Thermal characteristics. . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . Application information. . . . . . . . . . . . . . . . . . . Ruggedness in class-AB operation. . . . . . . . . . Package outline . . . . . . . . . . . . . . . . . . . . . . . . . Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information . . . . . . . . . . . . . . . . . . . . . 1 1 1 2 2 2 2 3 3 3 3 4 6 7 8 8 8 8 8 © Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 30 January 2006 Document number: BLC6G20-140_6G20LS-140_1 Published in The Netherlands