TZS4678 to TZS4717 Vishay Semiconductors Small Signal Zener Diodes Features • Zener voltage specified at 50 µA • Maximum delta VZ given from 10 µA to e2 100 µA • Very high stability • Low noise • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications 9612009 Packaging Codes/Options: GS08 / 2.5 k per 7" reel 12.5 k/box • Voltage stabilization Mechanical Data Case: QuadroMELF Glass case SOD80 Weight: approx. 34 mg Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Symbol Value Unit Ptot 500 mW Z-current IZ Ptot/VZ mA Junction temperature Tj 175 °C Tstg - 65 to + 175 °C Symbol Value Unit RthJA 500 K/W Power dissipation Test condition RthJA ≤ 300 K/W Storage temperature range Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Junction to ambient air on PC board 50 mm x 50 mm x 1.6 mm Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Document Number 85613 Rev. 1.5, 15-Mar-06 Test condition IF = 100 mA Symbol VF Min Typ. Max Unit 1.5 V www.vishay.com 1 TZS4678 to TZS4717 Vishay Semiconductors Electrical Characteristics Partnumber Zener Voltage Max. Zener Current Max. Voltage Change Max. Reverse Current Test Voltage VZ at IZ = 50 μA IZM2) ΔVZ4) IR3) VR3) mA V µA V V typ 1) 2) 1) min max TZS4678 1.8 1.71 1.89 120 0.7 7.5 1 TZS4679 2 1.9 2.1 110 0.7 5 1 TZS4680 2.2 2.09 2.31 100 0.75 4 1 TZS4681 2.4 2.28 2.52 95 0.80 2 1 TZS4682 2.7 2.565 2.835 90 0.85 1 1 TZS4683 3 2.85 3.15 85 0.90 0.80 1 TZS4684 3.3 3.135 3.465 80 0.95 7.5 1.5 TZS4685 3.6 3.42 3.78 75 0.95 7.5 2 TZS4686 3.9 3.705 4.095 70 0.97 5 2 TZS4687 4.3 4.085 4.515 65 0.99 4 2 TZS4688 4.7 4.465 4.935 60 0.99 10 3 TZS4689 5.1 4.845 5.355 55 0.97 10 3 TZS4690 5.6 5.32 5.88 50 0.96 10 4 TZS4691 6.2 5.89 6.51 45 0.95 10 5 TZS4692 6.8 6.46 7.14 35 0.90 10 5.1 TZS4693 7.5 7.125 7.875 31.8 0.75 10 5.7 TZS4694 8.2 7.79 8.61 29 0.5 1 6.2 TZS4695 8.7 8.265 9.135 27.4 0.1 1 6.6 TZS4696 9.1 8.645 9.555 26.2 0.08 1 6.9 TZS4697 10 9.5 10.5 24.8 0.1 1 7.6 TZS4698 11 10.45 11.55 21.6 0.11 0,05 8.4 TZS4699 12 11.4 12.6 20.4 0.12 0.05 9.1 TZS4700 13 12.35 13.65 19 0.13 0.05 9.8 TZS4701 14 13.3 14.7 17.5 0.14 0.05 10.6 TZS4702 15 14.25 15.75 16.3 0.15 0.05 11.4 TZS4703 16 15.2 16.8 15.4 0.16 0.05 12.1 TZS4704 17 16.15 17.85 14.5 0.17 0.05 12.9 TZS4705 18 17.1 18.9 13.2 0.18 0.05 13.6 TZS4706 19 18.05 19.95 12.5 0.19 0.05 14.4 TZS4707 20 19 21 11.9 0.2 0.01 15.2 TZS4708 22 20.9 23.1 10.8 0.22 0.01 16.7 TZS4709 24 22.8 25.2 9.9 0.24 0.01 18.2 TZS4710 25 23.75 26.25 9.5 0.25 0.01 19 TZS4711 27 25.65 28.35 8.8 0.27 0.01 20.4 TZS4712 28 26.6 29.4 8.5 0.28 0.01 21.2 TZS4713 30 28.5 31.5 7.9 0.3 0.01 22.8 TZS4714 33 31.35 34.65 7.2 0.33 0.01 25 TZS4715 36 34.2 37.8 6.6 0.36 0.01 27.3 TZS4716 39 37.05 40.95 6.1 0.39 0.01 29.6 TZS4717 43 40.85 45.15 5.5 0.43 0.01 32.6 Toleranzing and voltage designation (VZ). The type numbers shown have a standard tolerance of ± 5 % on the nominal zener voltage. Maximum zener current ratings (IZM). Maximum zener current ratings are based on maximum zener voltage of the individual units. 3) Reverse leakage current (IR). Reverse leakage currents are guaranteed and measured at VR as shown on the table. 4) Maximum voltage change (ΔVZ). Voltage change is equal to the difference between VZ at 100 µA and VZ at 10 µA. www.vishay.com 2 Document Number 85613 Rev. 1.5, 15-Mar-06 TZS4678 to TZS4717 Vishay Semiconductors Typical Characteristics 600 500 400 300 200 100 0 0 40 80 120 200 160 Tamb - Ambient Temperature (°C) 95 9602 TKVZ - Temperature Coefficient of VZ (10-4/K) Ptot - Total Power Dissipation (mW) Tamb = 25 °C, unless otherwise specified 15 10 5 IZ = 5 mA 0 -5 0 95 9600 Figure 1. Total Power Dissipation vs. Ambient Temperature 50 200 CD - Diode Capacitance (pF) VZ - Voltage Change (mV) 20 40 30 VZ - Z-Voltage (V) Figure 4. Temperature Coefficient of Vz vs. Z-Voltage 1000 Tj = 25 °C 100 IZ = 5 mA 10 150 VR = 2 V Tj = 25 °C 100 50 0 1 0 5 10 15 0 25 20 VZ - Z-Voltage (V) 95 9598 TKVZ = 10 x 10-4/K 8 x 10-4/K 6 x 10-4/K 1.1 -4 4 x 10 /K 2 x 10-4/K 1.0 0 - 2 x 10-4/K - 4 x 10-4/K 0.9 IF - Forward Current (mA) 1.2 25 VZ - Z-Voltage (V) 10 Tj = 25 °C 1 0.1 0.01 0.001 0 60 120 180 Tj - Junction Temperature (°C) Document Number 85613 0 240 Figure 3. Typical Change of Working Voltage vs. Junction Temperature Rev. 1.5, 15-Mar-06 20 100 VZtn = VZt/VZ (25 °C) 95 9599 15 Figure 5. Diode Capacitance vs. Z-Voltage 1.3 0.8 - 60 10 5 95 9601 Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25°C VZtn - Relative Voltage Change 10 95 9605 0.2 0.4 0.6 0.8 1.0 VF - Forward Voltage (V) Figure 6. Forward Current vs. Forward Voltage www.vishay.com 3 TZS4678 to TZS4717 Vishay Semiconductors rZ - Differential Z-Resistance (Ω) 100 IZ - Z-Current (mA) 80 Ptot = 500 mW Tamb = 25 °C 60 40 20 0 0 4 6 12 8 IZ = 1 mA 100 5 mA 10 10 mA Tj = 25 °C 1 0 20 VZ - Z-Voltage (V) 95 9604 1000 5 95 9606 Figure 7. Z-Current vs. Z-Voltage 10 15 20 25 VZ - Z-Voltage (V) Figure 9. Differential Z-Resistance vs. Z-Voltage IZ - Z-Current (mA) 50 Ptot = 500 mW Tamb = 25 °C 40 30 20 10 0 15 20 95 9607 25 35 30 VZ - Z-Voltage (V) Zthp - Thermal Resistance for Pulse Cond. (KW) Figure 8. Z-Current vs. Z-Voltage 1000 tP/T = 0.5 100 tP/T = 0.2 Single Pulse 10 RthJA = 300 K/W T = Tjmax - Tamb tP/T = 0.01 tP/T = 0.1 tP/T = 0.02 tP/T = 0.05 1 10-1 95 9603 iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj) 100 101 102 tP - Pulse Length (ms) Figure 10. Thermal Response www.vishay.com 4 Document Number 85613 Rev. 1.5, 15-Mar-06 TZS4678 to TZS4717 Vishay Semiconductors Package Dimensions in mm (Inches) 12071 Document Number 85613 Rev. 1.5, 15-Mar-06 www.vishay.com 5 TZS4678 to TZS4717 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 Document Number 85613 Rev. 1.5, 15-Mar-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1