CPC3703 N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 250V RDS(ON) (max) 4Ω IDSS (min) Package 360mA SOT-89 Features • Depletion mode device offers low RDS(ON) at cold temperatures • Low on resistance 4 ohms max. at 25ºC • High input impedance • High breakdown voltage 250V • Low VGS(off) voltage -1.6 to -3.9V • Small package size SOT89 The CPC3703 is an N-channel, depletion mode, field effect transistor (FET) that utilizes Clare’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications. The CPC3703 is a highly reliable FET device that has been used extensively in Clare’s Solid State Relays for industrial and telecommunications applications. This device excels in power applications that require low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3703 offers a low, 4Ω maximum, on-state resistance at 25ºC. Applications • • • • • • Description Ignition Modules Normally-on Switches Solid State Relays Converters Telecommunications Power Supply The CPC3703 has a minimum breakdown voltage of 250V, and is available in an SOT89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Ordering Information Part # CPC3703C CPC3703CTR Description SOT89 (100/Tube) SOT89 (2000/Reel) Circuit Symbol Package Pinout D D G D S G (SOT89) Pb RoHS 2002/95/EC DS-CPC3703-R03 S e3 www.clare.com 1 CPC3703 Absolute Maximum Ratings Parameter Drain-to-Source Voltage Gate-to-Source Voltage Total Package Dissipation 1 Operational Temperature Storage Temperature 1 Ratings 250 ±20 1.6 -55 to +125 -55 to +125 Units V V W ºC ºC Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. Mounted on 1"x1" FR4 board. Thermal Characteristics Package ID (continuous) SOT-89 ID (pulsed) 360mA Power Dissipation θjc @TA=25ºC ºC/W 1.6W 15 600mA IDR IDRM 360mA 600mA Electrical Characteristics Symbol BVDSX VGS(off) dVGS(off) /dT IGSS Drain-to-Source Leakage Current Conditions VGS= -5V, ID=100µA VDS= 15V, ID=1mA VDS= 15V, ID=1mA VGS=±20V, VDS=0V VGS= -5V, VDS=Max Rating VGS= -5V, VDS=200V, TA=125ºC VGS= 0V, VDS=15V ID(off) Saturated Drain-to-Source Current Static Drain-to-Source On-State Resistance Change in RDS(on) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance IDSS RDS(on) dRDS(on) /dT GFS CISS COSS CRSS Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time td(on) tr td(off) tf Source-Drain Diode Voltage Drop VSD VGS= 0V, ID=200mA ID= 100mA, VDS = 10V VGS= -5V VDS= 25V - f= 1MHz VDD= 25V ID= 150mA VGS= 0V to -10V RGEN= 50Ω VGS= -5V, ISD=150mA 90% PULSE GENERATOR INPUT 10% td(ON) td(OFF) 23 8 17 70 35 20 25 80 0.6 1.8 Units V V mV/ºC nA µA mA mA Ω %/ºC m pF ns V OUTPUT Rgen t(OFF) tr - Max -3.9 4.5 100 1 1 4 1.1 350 65 35 RL 0V t(ON) - Typ 327 51 27 VDD Switching Waveform & Test Circuit -10V Min 250 -1.6 300 225 Ω Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Off Voltage Change in VGS(off) with Temperature Gate Body Leakage Current tF D.U.T. VDD 10% 10% INPUT OUTPUT 0V 2 90% 90% www.clare.com R03 CPC3703 PERFORMANCE DATA* Output Characteristics (TA=25ºC) 350 ID (mA) ID (mA) VGS=-1.5 VGS=-2.0 1 2 3 VDS (V) 4 5 300 5.0 250 4.5 200 +25ºC -55ºC -2.5 VGS (V) -2.0 0.8 0.6 0.4 4 200 3 VGS(OFF) -50 -0 50 100 2 150 Maximum Rated Safe Operating Area at 25ºC 1.0 0.1 150 0.001 100 50 0.2 0.0001 0 0 20 40 60 80 100 120 140 0 Temperature (ºC) 525 450 VISS RON (Ω) 375 300 VOSS 150 VRSS 75 0 0 10 20 VDS (V) 20 30 40 50 60 70 80 90 100 30 40 0 10 100 1000 VDS (V) On-Resistance vs. Drain Current (VGS=0V) 600 225 10 ID (mA) Capacitance vs. Drain Source Voltage (VGS=-5V) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 ID (A) *The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application department. R03 1 ID (A) 1.0 5 Temperature (ºC) Ω GFS (m ) 1.2 6 RON 3.5 -1.5 -55ºC +25ºC +125ºC 250 1.4 0 Capacitance (pF) -3.0 300 1.6 7 2.5 Transconductance vs. Drain Current (VDS=10V) 1.8 4.0 0 0 -3.5 6 8 VDS=10V ID=1mA VGS=0V ID=200mA 3.0 50 Power Dissipation vs. Ambient Temperature Power Dissipation (W) +125ºC 150 100 VGS=-2.5 0 VGS(OFF) & RON Vs. Temperature 5.5 VGS(OFF) (V) VGS=-1.0 www.clare.com 3 RON (Ω) 1000 900 800 700 600 500 400 300 200 100 0 Transfer Characteristics (VDS=5V) CPC3703 Manufacturing Information Soldering For proper assembly, the component must be processed in accordance with the current revision of IPC/JEDEC standard J-STD-020. Failure to follow the recommended guidelines may cause permanent damage to the device resulting in impaired performance and/or a reduced lifetime expectancy. Washing Clare does not recommend ultrasonic cleaning or the use of chlorinated solvents. Pb e3 RoHS 2002/95/EC MECHANICAL DIMENSIONS SOT89 Package Recommended PCB Land Pattern 1.626 - 1.829 (0.064 - 0.072) 1.397 - 1.600 (0.055 - 0.063) R 0.254 (R 0.010) 1.90 (0.075) 3.937 - 4.242 (0.155 - 0.167) 2.286 ± 2.591 (0.090 0.102) 45º 2.70 (0.107) 1.40 (0.055) 0.356 - 0.483 (0.014 - 0.019) 0.889 - 1.194 (0.035 - 0.047) 0.432 - 0.559 (0.017 - 0.022) 5.00 (0.197) 50º 1.90 (0.074) 0.356 - 0.432 (0.014 - 0.017) 0.60 (0.024) TYP 3 4.394 - 4.597 (0.173 - 0.181) 1.422 - 1.575 (0.056 - 0.062) 2.921 - 3.073 (0.115 - 0.121) Dimensions mm (inches) Tape and Reel Packaging for SOT89 Package 330.2 Dia (13.00 Dia) Top Cover Tape Top Cover Tape Thickness 0.102 Max (0.004 Max) W=12.00 ± 0.30 (0.472 ± 0.012) B0=4.52 ± 0.10 (0.178 ± 0.004) P=8.00 ± 0.10 (0.315 ± 0.004) A0=4.91 ± 0.10 (0.193 ± 0.004) K0=1.90 ± 0.10 (0.075 ± 0.004) Dimensions mm (inches) Embossed Carrier Embossment NOTE: Tape dimensions not shown comply with JEDEC Standard EIA-481-2 For additional information please visit our website at: www.clare.com Clare, Inc. makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in Clare’s Standard Terms and Conditions of Sale, Clare, Inc. assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right. The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of Clare’s product may result in direct physical harm, injury, or death to a person or severe property or environmental damage. Clare, Inc. reserves the right to discontinue or make changes to its products at any time without notice. 4 Specification: DS-CPC3703-R03 ©Copyright 2009, Clare, Inc. All rights reserved. Printed in USA. 10/13/09