CYPRESS CY62256EV18

CY62256EV18 MoBL®
256-Kbit (32 K × 8) Static RAM
256-Kbit (32 K × 8) Static RAM
Features
Functional Description
■
Very high speed: 70 ns
■
Temperature ranges:
❐ Industrial: –40 °C to +85 °C
■
Wide voltage range: 1.65 V to 2.25 V
■
Pin compatible with CY62256N
■
Ultra low standby power
❐ Typical standby current: 1 µA
❐ Maximum standby current: 4 µA
■
Ultra low active power
❐ Typical active current: 1.3 mA at f = 1 MHz
The CY62256EV18 is a high performance CMOS static RAM
module organized as 32 K words by 8-bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL®) in portable
applications such as cellular telephones. The device also has an
automatic power-down feature that significantly reduces power
consumption when addresses are not toggling. Placing the
device in standby mode reduces power consumption by more
than 99 percent when deselected (CE HIGH). The eight input
and output pins (I/O0 through I/O7) are placed in a high
impedance state when the device is deselected (CE HIGH), the
outputs are disabled (OE HIGH), or a write operation is in
progress (CE LOW and WE LOW).
■
Easy memory expansion with CE and OE features
■
Automatic power-down when deselected
■
Complementary metal oxide semiconductor (CMOS) for
optimum speed and power
■
Offered in Pb-free 28-pin Narrow SOIC package
To write to the device, take chip enable (CE) LOW and write
enable (WE) LOW. Data on the eight I/O pins is then written into
the location specified on the address pin (A0 through A14).
To read from the device, take chip enable (CE LOW) and output
enable (OE) LOW while forcing write enable (WE) HIGH. Under
these conditions, the contents of the memory location specified
by the address pins appear on the I/O pins.
Logic Block Diagram
I/O0
INPUTBUFFER
I/O1
32K x 8
ARRAY
I/O2
SENSE AMPS
ROW DECODER
A10
A9
A8
A7
A6
A5
A4
A3
A2
I/O3
I/O4
I/O5
CE
WE
COLUMN
DECODER
I/O6
POWER
DOWN
I/O7
Cypress Semiconductor Corporation
Document #: 001-69650 Rev. *B
•
A12
A11
A1
A0
A13
A14
OE
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised September 4, 2012
CY62256EV18 MoBL®
Contents
Pin Configuration ............................................................. 3
Product Portfolio .............................................................. 3
Maximum Ratings ............................................................. 4
Operating Range ............................................................... 4
Electrical Characteristics ................................................. 4
Capacitance ...................................................................... 5
Thermal Resistance .......................................................... 5
AC Test Loads and Waveforms ....................................... 5
Data Retention Characteristics ....................................... 6
Data Retention Waveform ................................................ 6
Switching Characteristics ................................................ 7
Switching Waveforms ...................................................... 8
Document #: 001-69650 Rev. *B
Truth Table ...................................................................... 10
Ordering Information ...................................................... 11
Ordering Code Definitions ......................................... 11
Package Diagrams .......................................................... 12
Acronyms ........................................................................ 13
Document Conventions ................................................. 13
Units of Measure ....................................................... 13
Document History Page ................................................. 14
Sales, Solutions, and Legal Information ...................... 14
Worldwide Sales and Design Support ....................... 14
Products .................................................................... 14
PSoC Solutions ......................................................... 14
Page 2 of 14
CY62256EV18 MoBL®
Pin Configuration
Figure 1. 28-pin Narrow SOIC
Product Portfolio
Power Dissipation
Product
Range
Speed
(ns)
VCC Range (V)
Operating ICC (mA)
f = 1 MHz
CY62256EV18LL Industrial
Min
Typ [1]
Max
1.65
1.8
2.25
70
f = fmax
Standby ISB2 (µA)
Typ [1]
Max
Typ [1]
Max
Typ [1]
Max
1.3
2.0
11
16
1
4
Notes
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C.
Document #: 001-69650 Rev. *B
Page 3 of 14
CY62256EV18 MoBL®
DC input voltage [2, 3] ...................................–0.2 V to 2.45 V
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied .......................................... –55 °C to +125 °C
Supply voltage to ground
potential .......................................................–0.2 V to 2.45 V
DC voltage applied to outputs
in high Z State [2, 3] ......................................–0.2 V to 2.45 V
Output current into outputs (LOW) ............................. 20 mA
Static discharge voltage
(MIL-STD-883, method 3015) ................................ > 2001 V
Latch-up current .................................................... > 200 mA
Operating Range
Device
Range
Ambient
Temperature
VCC[4]
CY62256EV18LL Industrial –40 °C to +85 °C
1.65 V to
2.25 V
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
70 ns
Unit
Min
Typ [5]
Max
1.4
–
–
V
–
–
0.2
V
V
VOH
Output HIGH voltage
IOH = –0.1 mA
VOL
Output LOW voltage
IOL = 0.1 mA
VIH
Input HIGH voltage
VCC = 1.65 V to 2.25 V
1.4
–
VCC + 0.2 V
VIL
Input LOW voltage
VCC = 1.65 V to 2.25 V
–0.2
–
0.4
V
IIX
Input leakage current
GND < VI < VCC
–1
–
+1
µA
IOZ
Output leakage current
GND < VO < VCC, output disabled
–1
–
+1
µA
ICC
VCC operating supply current
f = fmax = 1/tRC
f = 1 MHz
VCC = 2.25 V
IOUT = 0 mA
CMOS levels
–
11
16
mA
–
1.3
2.0
mA
ISB1
Automatic CE power-down
current — CMOS inputs
CE > VCC0.2 V,
VIN > VCC – 0.2 V, VIN < 0.2 V
f = fmax (address and data only),
f = 0 (OE and WE), VCC = 2.25 V
–
1
4
µA
ISB2 [6]
Automatic CE power-down
current — CMOS inputs
CE > VCC – 0.2 V,
VIN > VCC – 0.2 V or VIN < 0.2 V,
f = 0, VCC = 2.25 V
–
1
4
µA
Notes
2. VIL(min) = –2.0 V for pulse durations less than 20 ns.
3. VIH(max) = VCC + 0.5 V for pulse durations less than 20 ns.
4. Full device AC operation assumes a 100 µs ramp time from 0 to VCC(min) and 200 µs wait time after VCC stabilization.
5. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C.
6. Chip enables (CE) must be at CMOS level to meet the ISB2 / ICCDR spec. Other inputs can be left floating.
Document #: 001-69650 Rev. *B
Page 4 of 14
CY62256EV18 MoBL®
Capacitance
Parameter [7]
CIN
Description
Test Conditions
Input capacitance
COUT
Max
Unit
10
pF
10
pF
Test Conditions
28-pin SOIC
Unit
Still air, soldered on a 3 × 4.5 inch, two-layer printed circuit
board
76.56
°C/W
36.07
°C/W
TA = 25 °C, f = 1 MHz, VCC = VCC(typ)
Output capacitance
Thermal Resistance
Parameter [7]
Description
JA
Thermal resistance
(junction to ambient)
JC
Thermal resistance
(junction to case)
AC Test Loads and Waveforms
Figure 2. AC Test Loads and Waveforms
R1
ALL INPUT PULSES
VCC
OUTPUT
VCC
R2
30 pF
INCLUDING
JIG AND
SCOPE
90%
10%
90%
10%
GND
Rise Time = 1 V/ns
Equivalent to:
Fall Time = 1 V/ns
THEVENIN EQUIVALENT
RTH
OUTPUT
V
Parameters
1.8 V
Unit
R1
13500

R2
10800

RTH
6000

VTH
0.8
V
Note
7. Tested initially and after any design or process changes that may affect these parameters.
Document #: 001-69650 Rev. *B
Page 5 of 14
CY62256EV18 MoBL®
Data Retention Characteristics
Over the Operating Range
Parameter
Conditions
VCC for data retention
VDR
ICCDR
Description
[9]
VCC = 1.0 V, CE > VCC 0.2 V,
VIN > VCC 0.2 V or VIN < 0.2 V
Data retention current
Min
Typ [8]
Max
Unit
1.0
–
–
V
–
–
3
µA
tCDR [10]
Chip deselect to data retention
time
0
–
–
ns
tR [11]
Operation recovery time
70
–
–
ns
Data Retention Waveform
Figure 3. Data Retention Waveform [12]
DATA RETENTION MODE
VCC
VCC(min)
tCDR
VDR > 1.0 V
VCC(min)
tR
CE
Notes
8. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C.
9. Chip enables (CE) must be at CMOS level to meet the ISB2 / ICCDR spec. Other inputs can be left floating.
10. Tested initially and after any design or process changes that may affect these parameters.
11. Full device AC operation requires linear VCC ramp from VDR to VCC(min) > 100 µs or stable at VCC(min)  100 µs.
12. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
Document #: 001-69650 Rev. *B
Page 6 of 14
CY62256EV18 MoBL®
Switching Characteristics
Over the Operating Range
Parameter [13]
Description
70 ns
Min
Max
Unit
Read Cycle
tRC
Read cycle time
70
–
ns
tAA
Address to data valid
–
70
ns
tOHA
Data hold from address change
5
–
ns
tACE
CE LOW to data valid
–
70
ns
tDOE
OE LOW to data valid
–
35
ns
5
–
ns
–
25
ns
5
–
ns
–
25
ns
tLZOE
tHZOE
tLZCE
OE LOW to low Z
[14]
OE HIGH to high Z
CE LOW to low Z
[14, 15]
[14]
[14, 15]
tHZCE
CE HIGH to high Z
tPU
CE LOW to power-up
0
–
ns
tPD
CE HIGH to power-down
–
70
ns
tWC
Write cycle time
70
–
ns
tSCE
CE LOW to write end
60
–
ns
tAW
Address setup to write end
60
–
ns
tHA
Address hold from write end
0
–
ns
tSA
Address setup to write start
0
–
ns
tPWE
WE pulse width
50
–
ns
tSD
Data setup to write end
30
–
ns
tHD
Data hold from write end
Write Cycle [16]
tHZWE
tLZWE
0
–
ns
WE LOW to high Z
[14, 15]
–
25
ns
WE HIGH to low Z
[14]
5
–
ns
Notes
13. Test Conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less (1 V/ns), timing reference levels of VCC(typ)/2, input
pulse levels of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in the Figure 2 on page 5.
14. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
15. tHZOE, tHZCE, and tHZWE transitions are measured when the output enter a high impedance state.
16. The internal write time of the memory is defined by the overlap of WE, CE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can terminate
a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write.
Document #: 001-69650 Rev. *B
Page 7 of 14
CY62256EV18 MoBL®
Switching Waveforms
Figure 4. Read Cycle No. 1 (Address Transition Controlled) [17, 18]
tRC
RC
ADDRESS
tAA
tOHA
DATA OUT
PREVIOUS DATA VALID
DATA VALID
Figure 5. Read Cycle No. 2 (OE Controlled) [18, 19]
ADDRESS
tRC
CE
tACE
OE
tHZOE
tDOE
tHZCE
tLZOE
HIGH IMPEDANCE
DATA VALID
DATA OUT
tLZCE
tPD
tPU
VCC
SUPPLY
CURRENT
HIGH
IMPEDANCE
ICC
50%
50%
ISB
Figure 6. Write Cycle No. 1 (WE Controlled)
[20, 21, 22]
tWC
ADDRESS
tSCE
CE
tAW
tSA
tHA
tPWE
WE
OE
tSD
DATA I/O
NOTE 23
tHD
DATA VALID
tHZOE
Notes
17. The device is continuously selected. OE, CE = VIL.
18. WE is HIGH for read cycle.
19. Address valid before or similar to CE transition LOW.
20. The internal write time of the memory is defined by the overlap of WE, CE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can
terminate a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write.
21. Data I/O is high impedance if OE = VIH.
22. If CE goes HIGH simultaneously with WE HIGH, the output remains in high impedance state.
23. During this period, the I/Os are in output state. Do not apply input signals.
Document #: 001-69650 Rev. *B
Page 8 of 14
CY62256EV18 MoBL®
Switching Waveforms (continued)
Figure 7. Write Cycle No. 2 (CE Controlled) [24, 25, 26]
tWC
ADDRESS
tSCE
CE
tSA
tHA
tAW
tPWE
WE
tSD
DATA I/O
tHD
DATA VALID
Figure 8. Write Cycle No. 3 (WE Controlled, OE LOW) [26]
tWC
ADDRESS
tSCE
CE
tAW
tSA
tHA
tPWE
WE
tSD
DATA I/O
NOTE 27
tHD
DATA VALID
tHZWE
tLZWE
Notes
24. The internal write time of the memory is defined by the overlap of WE, CE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can
terminate a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write.
25. Data I/O is high impedance if OE = VIH.
26. If CE goes HIGH simultaneously with WE HIGH, the output remains in high impedance state.
27. During this period, the I/Os are in output state. Do not apply input signals.
Document #: 001-69650 Rev. *B
Page 9 of 14
CY62256EV18 MoBL®
Truth Table
CE
H
L
WE
X
[28]
OE
X
[28]
Inputs/Outputs
Mode
Power
High Z
Deselect/power-down
Standby (ISB)
H
L
Data out
Read
Active (ICC)
L
L
[28]
Data in
Write
Active (ICC)
L
H
H
High Z
Selected, outputs disabled
Active (ICC)
X
Note
28. The ‘X’ (Don’t care) state for the CE / OE / WE in the truth table refer to the logic state (either HIGH or LOW). Intermediate voltage levels on these pins is not permitted.
Document #: 001-69650 Rev. *B
Page 10 of 14
CY62256EV18 MoBL®
Ordering Information
Speed
(ns)
70
Package
Diagram
Ordering Code
CY62256EV18LL-70SNXI
Package Type
51-85092 28-pin (300-Mil) Narrow SOIC (Pb-free)
Operating
Range
Industrial
Contact your local Cypress sales representative for availability of these parts.
Ordering Code Definitions
CY 62 256 E V18 LL - 70
SN
X
I
Temperature Grade:
I = Industrial = –40 °C to +85 °C
Pb-free
Package Type:
SN = 28-pin Narrow SOIC
Speed Grade: 70 ns
Low Power
V18 = 1.8 V
Process Technology: E = 90 nm
Density: 256 Kbit
MoBL SRAM family
Company ID: CY = Cypress
Document #: 001-69650 Rev. *B
Page 11 of 14
CY62256EV18 MoBL®
Package Diagrams
Figure 9. 28-pin SNC (300 Mils) SN28.3 (Narrow Body) Package Outline, 51-85092
51-85092 *E
Document #: 001-69650 Rev. *B
Page 12 of 14
CY62256EV18 MoBL®
Acronyms
Acronym
Document Conventions
Description
Units of Measure
CMOS
complementary metal oxide semiconductor
CE
chip enable
°C
degree Celsius
I/O
input/output
MHz
megahertz
OE
output enable
µA
microampere
SRAM
static random access memory
µs
microsecond
SOIC
small outline integrated circuit
mA
milliampere
WE
write enable
ns
nanosecond

ohm
Document #: 001-69650 Rev. *B
Symbol
Unit of Measure
pF
picofarad
V
volt
W
watt
Page 13 of 14
CY62256EV18 MoBL®
Document History Page
Document Title: CY62256EV18 MoBL®, 256-Kbit (32 K × 8) Static RAM
Document Number: 001-69650
Revision
ECN
Submission
Date
Orig. of
Change
**
3334904
09/07/2011
RAME
New data sheet
Changed status from Preliminary to Final.
*A
3413173
10/18/2011
RAME
*B
3733339
09/04/2012
JISH
Description of Change
Fixed typo errors. Sunset review.
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
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© Cypress Semiconductor Corporation, 2011-2012. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document #: 001-69650 Rev. *B
Revised September 4, 2012
All products and company names mentioned in this document may be the trademarks of their respective holders.
Page 14 of 14