VISHAY DG4157DL-T1-E3

DG4157
Vishay Siliconix
Low Voltage, 1-Ω Single SPDT Analog Switch (1:2 Multiplexer) with
Power Down Protection
DESCRIPTION
FEATURES
The DG4157 is a high performance single pole double throw
analog switch designed for 1.8 V to 5.5 V operation with
single power rail.
Fabricated with high density CMOS technology, the device
achieves low on resistance as 1 Ω at 4.5 V power supply and
fast switching speed. The - 3 dB bandwidth is typically
117 MHz.
The DG4157 features break before make switch
performance, and guarantees logic HIGH control input
threshold as low as 1.4 V over the range up to 5.5 V.
It can handle both analog and digital signals and permits
signals with amplitudes of up to VCC to be transmitted in
either direction.
Power down protection circuit is built in to prevent abnormal
current path through signal pins during power down
condition.
Each output pin (A, B0, or B1) can withstand greater than
8 kV (human body model).
It is available in both SC-70-6 and miniQFN6 packages.
• Direct cross of industry standard xxx4157
• 1.8 V to 5.5 V operation voltage range
• Guaranteed 1.4 V logic high input threshold
at VCC = 5.5 V
• 117 MHz, - 3 dB bandwidth
• Low on-resistance
• Power down protection
Pb-free
Available
RoHS*
COMPLIANT
The features make it an ideal part for the switching of audio,
video, and data stream.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
SC-70-6L
miniQFN-6L
S
1
6
V+
V+
2
5 GND
A
A
3
4
B1
1
6
S
GND
2
5
B0
3
4
Top View
B0
Top View
G0xx
Pin 1
Pin 1
Device Marking: G0xx
xx = Date/Lot Traceability Code
TRUTH TABLE
Fx
Device Marking: Fx
x = Date/Lot Traceability Code
ORDERING INFORMATION
Logic Input (S)
Function
0
B0 Connected to A
1
B1
B1 Connected to A
Temp. Range
- 40 °C to 85 °C
Package
Part Number
SC-70-6L
DG4157DL-T1-E3
miniQFN-6L
DG4157DN-T1-E4
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 68800
S-82827-Rev. C, 24-Nov-08
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DG4157
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Reference V+ to GND
Unit
- 0.3 to + 6
S, A, Ba
V
- 0.3 to (V+ + 0.3)
Continuous Current (Any terminal)
± 200
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 400
Storage Temperature
D Suffix
Power Dissipation (Packages)b
mA
- 65 to 150
SC-70-6Lc
250
miniQFN-6Ld
160
°C
mW
Notes:
a. Signals on A, or B or S exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 3.1 mW/°C above 70 °C.
d. Derate 2.0 mW/°C above 70 °C.
SPECIFICATIONS
Test Conditions
Unless Otherwise Specified
Parameter
Symbol
V+ = 3.0 V, VIN = 0 V or V+e
Limits
- 40 °C to 85 °C
Temp.a
Min.b
Typ.c
Max.b
1.7
2.5
0.95
1.2
Unit
DC Characteristics
V+ = 2.7 V, B0 or B1 = 1.5 V, IO = 100 mA
On Resistance
RON
V+ = 4.5 V, B0 or B1 = 3.5 V, IO = 100 mA
On Resistance Flatness
On Resistance Match
RFLATNESS
ΔRON
Switch OFF Leakage Current
IOFF
Switch ON Leakage Current
ION
V+ = 2.7 V, B0 or B1 = 0.75 V, 1.5 V,
IO = 100 mA
V+ = 4.5 V, B0 or B1 = 1 V, 3.5 V,
IO = 100 mA
V+ = 2.7 V, B0 or B1 = 1.5 V,
IO = 100 mA
V+ = 4.5 V, B0 or B1 = 3.5 V,
IO = 100 mA
V+ = 5.5 V, A = 1 V, 4.5 V
B0 or B1 = 4.5 V, 1 V or Floating
Room
3
Full
Room
1.4
Full
Room
0.2
Room
0.14
Full
0.3
Ω
0.4
Room
0.04
Room
0.05
Full
0.12
0.15
Room
-2
2
Full
- 20
20
Room
-4
4
Full
- 40
40
Full
1.4
nA
Digital Control
Input, High Voltage
VINH
Input, Low Voltage
VINL
Input Current
Power Supply
Power Supply Range
Quiescent Supply Current
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IINH, IINL
V+ = 2.7 V to 5.5 V
VIN = 0 or V+
V+
I+
V+ = 5.5 V, VIN = 0 V, 5.5 V
0.4
Full
Full
-1
Full
1.8
Room
Full
0.05
V
1
µA
5.5
V
0.5
1
µA
Document Number: 68800
S-82827-Rev. C, 24-Nov-08
DG4157
Vishay Siliconix
SPECIFICATIONS
Test Conditions
Unless Otherwise Specified
Parameter
Symbol
Limits
- 40 °C to 85 °C
V+ = 3.0 V, VIN = 0 V or V+e
Temp.a
V+ = 2.7 V, B0 or B1 = 1.5 V, RL = 50 Ω,
CL = 35 pF
Room
V+ = 4.5 V, B0 or B1 = 1.5 V, RL = 50 Ω,
CL = 35 pF
Room
V+ = 2.7 V, B0 or B1 = 1.5 V, RL = 50 Ω,
CL = 35 pF
Room
V+ = 4.5 V, B0 or B1 = 1.5 V, RL = 50 Ω,
CL = 35 pF
Room
Min.b
Typ.c
Max.b
40
55
22
37
12
27
Unit
AC Characteristics
Turn-On Timed
tON
Turn-Off Timed
Break-Before-Make
tOFF
Timed
Charge Injectiond
Off Isolationd
Crosstalkd
tBBM
Q
OIRR
V+ = 2.7 V, B0 = B1 = 1.5 V, RL = 50 Ω,
CL = 35 pF
8
Room
Room
ns
23
25
Full
CL = 1 nF, RGEN = 0 Ω, VGEN = 0 V
RL= 50 Ω, CL = 5 pF, f = 1 MHz
30
Full
V+ = 4.5 V, B0 = B1 = 1.5 V, RL = 50 Ω,
CL = 35 pF
RL= 50 Ω, f = 10 MHz
40
Full
Room
RL= 50 Ω, f = 1 MHz
60
Full
1
26
1
15
50
pC
- 58
- 31
dB
- 63
XTALK
RL= 50 Ω, CL = 5 pF, f = 10 MHz
Room
Bandwidthd
BW
RL= 50 Ω
Room
117
MHz
Total Harmonic Distortiond
THD
RL= 600 Ω, VIN = 0.5 V, f = 20 to 20 kHz
Room
0.02
%
RL= 50 Ω, CL = 5 pF, f = 1 MHz
Room
57
- 36
Capacitance
BX Port Off Capacitanced
A Port On
Capacitanced
Control Pin
Capacitanced
CB(OFF)
CA(ON)
CIN
20
pF
5
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 68800
S-82827-Rev. C, 24-Nov-08
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DG4157
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
2.5
7
V+ = 1.8 V, IB = 5 mA
V+ = 2 V, IB = 5 mA
2.0
IB = 100 mA
V+ = 2.35 V, IB = 10 mA
5
V+ = 2.7 V
4
V+ = 3.6 V
V+ = 3 V
V+ = 4.5 V
3
V+ = 2.7 V
+ 85 °C
R ON - On Resistance (Ω)
R ON - On Resistance (Ω)
6
2
V+ = 5.5 V
1.5
+ 25 °C
- 40 °C
1.0
0.5
1
0
0
0
1
2
3
4
5
0
6
0.5
1.0
VA - Analog Voltage (V)
1.5
2.0
2.5
3.0
VA - Analog Voltage (V)
RON vs. VD and Temperature
RON vs. VA and Supply Voltage
10 000
10
V+ = 5.5 V
V+ = 5.5 V
Leakage Current (pA)
I+ - Supply Current (nA)
IA(OFF)
1000
1
0.1
IA(ON)
100
IB0(OFF)
10
0.01
- 40
- 20
0
20
40
60
1
- 40
80
- 20
0
40
60
80
100
Leakage Current vs. Temperature
Supply Current vs. Temperature
700
100
C L = 1nF
Drain
80
I B0(OFF)
I A(OFF)
Q - Charge Injection (pC)
500
Leakage Current (pA)
20
Temperature (°C)
Temperature (°C)
300
100
- 100
I A(ON)
- 300
60
40
V+ = + 4.5 V
V+ = + 5.5 V
20
0
- 20
V+ = + 1.8 V
- 40
V+ = + 2.7 V
- 500
V+ = + 3 V
- 60
V+ = 5.5 V
- 700
V+ = + 3.6 V
- 80
0
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1
2
3
4
5
0
1
2
3
4
5
VA - Analog Voltage (V)
Analog Voltage (V)
Leakage vs. Analog Voltage
CECA Charge Injection vs. Analog Voltage
6
Document Number: 68800
S-82827-Rev. C, 24-Nov-08
DG4157
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1.4
50
t ON V+ = 2.7 V
- 40 °C to 85 °C
40
VT - Switching Threshold (V)
tON, t OFF - Switching Time (ns)
45
35
30
t ON V+ = 4.5 V
25
20
t OFF V+ = 2.7 V
15
10
t OFF V+ = 4.5 V
1.2
1.0
0.8
0.6
5
0
- 40
0.4
- 20
0
20
40
60
80
1.0
1.5
2.0
2.5
Temperature (°C)
Switching Time vs. Temperature
0
-2
- 10
OIRR, XTALK (dB)
Loss (dB)
4.0
4.5
5.0
5.5
6.0
V+ = 3 V
R L = 50 Ω
- 20
-4
V+ = 3 V
R L = 50 Ω
-8
- 10
- 30
OIRR
- 40
- 60
- 70
- 14
- 80
1M
10M
100M
1G
XTALK
- 50
- 12
- 16
100K
3.5
Switching Threshold vs. Supply Voltage
0
-6
3.0
V+ - Supply Voltage (V)
- 90
100K
1M
10M
100M
Frequency (Hz)
Frequency (Hz)
Insertion Loss vs. Frequency
Off-Isolation and Crosstalk vs. Frequency
Document Number: 68800
S-82827-Rev. C, 24-Nov-08
1G
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DG4157
Vishay Siliconix
TEST CIRCUITS
V+
VINH
Logic
Input
V+
B1 or B0
Switch
Input
VINL
Switch Output
A
tr < 5 ns
tf < 5 ns
50 %
VOUT
0.9 x V OUT
Switch
Output
S
Logic
Input
RL
50 Ω
GND
CL
35 pF
0V
tON
tOFF
0V
CL (includes fixture and stray capacitance)
VOUT = VA
RL
R L + R ON
Figure 1. Switching Time
V+
Logic
Input
V+
B1
B0
A
B1
VINH
tr < 5 ns
tf < 5 ns
VINL
VO
B0
RL
50 Ω
S
CL
35 pF
B0 = B1
VO
GND
Switch
Output
90 %
0V
tD
tD
CL (includes fixture and stray capacitance)
Figure 2. Break-Before-Make Interval
V+
Rgen
B0 or B1
VOUT
VOUT
+
Vgen
ΔVOUT
V+
A
S
S
CL
On
Off
On
GND
Q = ΔVOUT x CL
S depends on switch configuration: input polarity
determined by sense of switch.
Figure 3. Charge Injection
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Document Number: 68800
S-82827-Rev. C, 24-Nov-08
DG4157
Vishay Siliconix
TEST CIRCUITS
V+
10 nF
V+
A
S
0 V, V+
B0 or B1
B0 / B1
Off Isolation = 20 log
RL
GND
VA
Analyzer
Figure 4. Off-Isolation
V+
10 nF
V+
A
Meter
S
0 V, V+
Impedance
Analyzer
B0 or B1
GND
f = 1 MHz
Figure 5. Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68800.
Document Number: 68800
S-82827-Rev. C, 24-Nov-08
www.vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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