DG2723 Vishay Siliconix 700 MHz, - 3 dB Bandwidth; Dual SPDT Analog Switch DESCRIPTION FEATURES DG2723 is a low RON, high bandwidth analog switch configured in dual SPDT. It achieves 7 Ω switch on resistance, greater than 700 MHz - 3 dB bandwidth with 5 pF load, and a channel to channel crosstalk and isolation at - 49 dB. Fabricated with high density sub micro CMOS process, the DG2723 provides low parasitic capacitance, handles bidirectional signal flow with minimized phase distortion. Guaranteed 1.3 V logic high threshold makes it possible to interface directly with low voltage MCUs. The DG2723 is designed for a wide range of operating voltages from 2.7 V to 4.3 V that can be driven directly from one cell Li-ion battery. On-chip protection circuit protects again fault events when signals at “com” pins goes beyond V+. Latch up current is 300 mA, as per JESD78, and its ESD tolerance exceeds 8 kV. Packaged in ultra small miniQFN-10 (1.4 mm x 1.8 mm x 0.55 mm), it is ideal for portable high speed mix signal switching application. As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with lead (Pb)-free device termination. The miniQFN-10 package has a nickel-palladium-gold device termination and is represented by the lead (Pb)-free "-E4" suffix to the ordering part number. The nickel-palladium-gold device terminations meet all JEDEC standards for reflow and MSL rating. As a further sign of Vishay Siliconix's commitment, the DG2723 is fully RoHS complaint. • • • • • • • • • • • • Wide operation voltage range Low on-resistance, 7 Ω (typical at 3 V) Low capacitance, 5.6 pF (typical) RoHS COMPLIANT - 3 dB high bandwidth with 5pF load: 700 MHz (typical) Low bit to bit skew: 40 pS (typical) Low power consumption Low logic threshold: V Power down protection: D+/D- pins can tolerate up to 5 V when V+ = 0 V Logic (S+ and S-) above V+ tolerance 8 kV ESD protection (HBM) Latch-up current 300 mA per JESD78 Lead (Pb)-free low profile miniQFN-10 (1.4 mm x 1.8 mm x 0.55 mm) APPLICATIONS • Cellular phones • • • • • Portable media players PDA Digital camera GPS Notebook computer • TV, monitor, and set top box FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION HSD1+ HSD1- miniQFN-10L 7 6 5 HSD2+ V+ 9 4 HSD2- S- 10 3 GND Pin 1: LONG LEAD 1 2 D- 18 2 D+ S+ Top View Document Number: 68767 S-81490-Rev. A, 30-Jun-08 www.vishay.com 1 DG2723 Vishay Siliconix ORDERING INFORMATION Temp. Range Package Part Number - 40 °C to 85 °C miniQFN-10 DG2723DN-T1-E4 TRUTH TABLE PIN DESCRIPTIONS S+ (Pin 8) S- (Pin 10) Function Pin Name Description X 0 D- = HSD1- S+ Select Input for D+ X 1 D- = HSD2- S- Select Input for D- 0 X D+ = HSD1+ HSD1±, HSD2±, D± Data Port 1 X D+ = HSD2+ ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter V+ Reference to GND S+, S-, D±, HSD1±, HSD2±a Current (Any Terminal except S+, S-, D±, HSD1±, HSD2±) Continuous Current (S+, S-, D±, HSD1±, HSD2±) Peak Current (Pulsed at 1 ms, 10 % Duty Cycle) Storage Temperature (D Suffix) Limit - 0.3 to 5.0 - 0.3 to (V+ + 0.3) 30 ± 250 ± 500 - 65 to 150 208 8 300 Unit V mA °C mW Power Dissipation (Packages)b miniQFN-10c ESD (Human Body Model) I/O to GND kV Latch-up (Current Injection) mA Notes: a. Signals on S+, S-, D±, HSD1±, HSD2± exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 2.6 mW/°C above 70 °C. SPECIFICATIONS V+ = 3.0 V Limits - 40 °C to 85 °C Symbol Test Conditions Otherwise Unless Specified VANALOG RDS(on) RDS(on) V+ = 3.0 V, ID± = 8 mA, VHSD1/2± = 0.4 V ΔRON V+ = 3.0 V, ID± = 8 mA, VHSD1/2± = 0.4 V Room 0.8 RON Flatness V+ = 3.0 V, ID± = 8 mA, VHSD1/2± = 0.0 V, 1.0 V Room 2.0 Switch Off Leakage Current I(off) V+ = 4.3 V, VHSD1/2± = 0.3 V, 3.0 V, VD± = 3.0 V, 0.3 V Full - 100 100 Channel On Leakage Current I(on) V+ = 4.3 V, VHSD1/2± = 0.3 V, 4.0 V, VD± = 4.0 V, 0.3 V Full - 200 200 V+ = 3.0 V to 3.6 V Full 1.3 V+ = 4.3 V Full 1.5 V+ = 3.0 V to 4.3 V Full Parameter Temp.a Min.b Typ.c Max.b Unit Analog Switch Analog Signal Ranged On-Resistance On-Resistance Matchd On-Resistance Resistance Flatnessd Full 0 Room V+ 7 Full V 8 9 Ω nA Digital Control Input Voltage High VINH Input Voltage Low VINL Input Capacitance Input Current www.vishay.com 2 CIN IINL or IINH Full VIN = 0 or V+ Full V 0.5 5.6 -1 pF 1 µA Document Number: 68767 S-81490-Rev. A, 30-Jun-08 DG2723 Vishay Siliconix SPECIFICATIONS V+ = 3.0 V Parameter Symbol Test Conditions Otherwise Unless Specified Limits - 40 °C to 85 °C Temp.a Min.b Typ.c Max.b Unit 30 ns Dynamic Characteristics Break-Before-Make Timee, d Room tBBM Enable Turn-On Timee, d tON(EN) Enable Turn-Off Timee, d tOFF(EN) 5 Full V+ = 3.0 V, VD1/2 ± = 1.5 V, RL = 50 Ω, CL = 35 pF Room Full Room 25 Full Charge Injectiond QINJ CL = 1 nF, RGEN = 0 Ω, VGEN = 0 V 0.5 Off-Isolationd OIRR - 30 Crosstalkd XTALK V+ = 3.0 V to 3.6 V, RL = 50 Ω, CL = 5 pF, f = 240 MHz - 45 BW V+ = 3.0 V to 3.6 V, CL = 5 pF, RL = 50 Ω, - 3 dB 700 Bandwidthd Channel-Off Capacitanced Channel-On Capacitance d Channel-to-Channel Skewd Skew Off Opposite Transitions of the Same Outputd Total Jitterd CD1± (off) 2.5 CD2± (off) 2.5 CD± (off) V+ = 3.3 V, f = 1 MHz Room dB MHz pF 2.5 CD± (on) 6.5 tSK(O) 50 tSK(p) pC V+ = 3.0 V to 3.6 V, RL = 50 Ω, CL = 5 pF ps 20 tJ 200 Power Supply Power Supply Range V+ Power Supply Current I+ 2.6 VIN = 0 V, or V+ Full 4.3 V 2 µA Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, not subjected to production test. e. VIN = input voltage to perform proper function. f. Crosstalk measured between channels. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 68767 S-81490-Rev. A, 30-Jun-08 www.vishay.com 3 DG2723 Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 30 28 26 V+ = 2.6 V 24 V+ = 3.0 V V+ = 2.6 V ION = 8 mA 25 22 RON - On-Resistance (Ω) RON - On-Resistance (Ω) T = 25 °C IS = 8 mA D1± V+ = 3.3 V 20 V+ = 3.6 V 18 V+ = 4.3 V 16 14 12 10 8 + 85 °C 20 + 25 °C 15 10 - 40 °C 5 6 4 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 0 0.5 1 VD - Analog Voltage (V) 2.5 3 RON vs. Analog Voltage and Temperature 25 25 V+ = 3.0 V ION = 8 mA V+ = 3.3 V ION = 8 mA + 85 °C 20 20 RON - On-Resistance (Ω) RON - On-Resistance (Ω) 2 VD - Analog Voltage (V) RON vs. VD and Single Supply Voltage + 25 °C 15 10 - 40 °C 5 + 85 °C 15 + 25 °C 10 - 40 °C 5 0 0 0.5 1 1.5 2 2.5 0 0.0 3 0.5 1.0 VD - Analog Voltage (V) 2.5 3.0 3.5 4.0 25 V+ = 4.3 V ION = 8 mA V+ = 3.6 V ION = 8 mA 20 + 85 °C 15 + 25 °C 10 - 40 °C RON - On-Resistance (Ω) 20 + 85 °C 15 + 25 °C 10 - 40 °C 5 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VD - Analog Voltage (V) RON vs. Analog Voltage and Temperature www.vishay.com 4 2.0 RON vs. Analog Voltage and Temperature 25 0 0.0 1.5 VD - Analog Voltage (V) RON vs. Analog Voltage and Temperature RON - On-Resistance (Ω) 1.5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VD - Analog Voltage (V) RON vs. Analog Voltage and Temperature Document Number: 68767 S-81490-Rev. A, 30-Jun-08 DG2723 Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 10 000 10 mA V+ = 4.3 V 1 mA V+ = 3.6 V 1000 Leakage Current (pA) I+ - Supply Current (A) V+ = 4.3 V 100 µA 10 µA V+ = 3.0 V 1 µA V+ = 3.3 V V+ = 2.6 V 100 nA 100 ID±(ON) 10 10 nA ID±(OFF) ID±(OFF) 1 1 nA 100 pA 10 100 1K 10 K 100 K 1M 0.1 - 60 - 40 - 20 10 M 0 20 40 60 80 100 120 140 Temperature (°C) Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency Leakage Current vs. Temperature 1.20 0 1.15 -1 1.10 VT - Switching Threshold (V) 1.05 -2 1.00 VIH 0.95 -3 Gain (dB) 0.90 VIL 0.85 0.80 -4 -5 0.75 0.70 -6 0.65 0.60 -7 0.55 0.50 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 4.3 -8 4.5 1 10 100 V+ - Supply Voltage (V) 0 0 - 10 - 10 - 20 - 20 - 30 - 30 - 40 - 50 - 60 - 40 - 50 - 60 - 70 - 70 - 80 - 80 - 90 - 90 10 1 100 Frequency (MHz) Off-Isolation, V+ = 3.3 V Document Number: 68767 S-81490-Rev. A, 30-Jun-08 10 000 Gain vs. Frequency, V+ = 3.3 V Crosstalk (dB) Off Isolation (dB) Switching Threshold vs. Supply Voltage - 100 1000 Frequency (MHz) 1000 - 100 1 10 100 1000 Frequency (MHz) Crosstalk, V+ = 3.3 V www.vishay.com 5 DG2723 Vishay Siliconix TEST CIRCUITS V+ VINH Logic Input HSD1± or HSD2± Switch Input V+ VINL Switch Output D± tr < 5 ns tf < 5 ns 50 % VOUT 0.9 x V OUT Logic Input Switch Output S± CL 35 pF RL 50 Ω GND 0V tON Logic "1" = Switch on Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT = D± (R L RL + R ON tOFF ) Figure 1. Switching Time V+ Logic Input V+ VHSD1± VHSD2± D± HSD1± VINH tr < 5 ns tf < 5 ns VINL VO HSD2± RL 50 Ω S± CL 35 pF HSD1± = HSD2± 90 % VO GND Switch 0V Output tD tD CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V+ Rgen V+ HSD1± or HSD2± VOUT D± VOUT VOUT + IN S± Vgen CL = 1 nF VIN = 0 - V+ On On Off GND Q= OUT x CL IN depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection www.vishay.com 6 Document Number: 68767 S-81490-Rev. A, 30-Jun-08 DG2723 Vishay Siliconix TEST CIRCUITS V+ V+ 10 nF 10 nF V+ V+ HSD1± or HSD2± S± D± 0 V, 2.4 V Meter D± S± 0 V, 2.4 V RL HSD1± or HSD2± GND HP4192A Impedance Analyzer or Equivalent GND f = 1 MHz Analyzer VD± Off Isolation = 20 log V HSD2± or HSD1± Figure 4. Off-Isolation Figure 5. Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68767. Document Number: 68767 S-81490-Rev. A, 30-Jun-08 www.vishay.com 7 Package Information Vishay Siliconix MINI QFN-10L CASE OUTLINE DIM MILLIMETERS INCHES MIN. NAM. MAX. MIN. NAM. MAX. A 0.50 0.55 0.60 0.0197 0.0217 0.0236 A1 0.00 - 0.05 0.000 - 0.002 b 0.15 0.20 0.25 0.006 0.008 0.010 c 0.15 REF 0.006 REF D 1.75 1.80 1.85 0.069 0.071 0.073 E 1.35 1.40 1.45 0.053 0.055 0.057 e 0.40 BSC 0.016 BSC L 0.35 0.40 0.45 0.014 0.016 0.018 L1 0.45 0.50 0.55 0.0177 0.0197 0.0217 ECN T-07039-Rev. A, 12-Feb-07 DWG: 5957 Document Number: 74496 12-Feb-07 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1