IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Surface Mount (IRFBF20S/SiHFBF20S) 900 RDS(on) (Ω) VGS = 10 V • Low-Profile Through-Hole (IRFBF20L/SiHFBF20L) 8.0 Qg (Max.) (nC) 38 • Available in Tape (IRFBF20S/SiHFBF20S) Qgs (nC) 4.7 • Dynamic dV/dt Rating Qgd (nC) 21 • 150 °C Operating Temperature Configuration Single and Available Reel RoHS* COMPLIANT • Fast Switching • Fully Avalanche Rated D • Lead (Pb)-free Available I2PAK (TO-262) D2PAK (TO-263) DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capabel of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBF20L/SiHFBF20L) is available for low-profile applications. G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb D2PAK (TO-263) IRFBF20SPbF SiHFBF20S-E3 IRFBF20S SiHFBF20S-E3 D2PAK (TO-263) IRFBF20STRLPbFa SiHFBF20STL-E3a IRFBF20STRLa SiHFBF20STLa D2PAK (TO-263) IRFBF20STRRPbFa SiHFBF20STR-E3a IRFBF20STRRa SiHFBF20STRa I2PAK (TO-262) IRFBF20LPbF SiHFBF20L-E3 IRFBF20L SiHFBF20L Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltagee VDS 900 Gate-Source Voltagee VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta,e ID IDM Linear Derating Factor UNIT V 1.7 1.1 A 6.8 0.43 W/°C Single Pulse Avalanche Energyb, e EAS 180 mJ Repetitive Avalanche Currenta IAR 1.7 A Repetitive Avalanche Energya EAR 5.4 mJ Maximum Power Dissipation TC = 25 °C TA = 25 °C Peak Diode Recovery dV/dtc, e PD dV/dt 54 3.1 1.5 W V/ns * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91121 S-Pending-Rev. A, 23-Jun-08 WORK-IN-PROGRESS www.vishay.com 1 IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Operating Junction and Storage Temperature Range LIMIT TJ, Tstg - 55 to + 150 for 10 s 300d 6-32 or M3 screw 10 Soldering Recommendations (Peak Temperature) Mounting Torque SYMBOL UNIT °C N Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V; starting TJ = 25 °C, L = 117 mH, RG = 25 Ω, IAS = 1.7 A (see fig. 12). c. ISD ≤ 1.7 A, dI/dt ≤ 70 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. Uses IRFBF20/SiHFBF20 data and test conditions. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient (PCB Mounted, steady-state)a RthJA - 40 Maximum Junction-to-Case RthJC - 2.3 UNIT °C/W Note a. When mounted on 1" square PCB ( FR-4 or G-10 material). SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 µA 900 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 1.1 - mV/°C VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance IGSS IDSS RDS(on) gfs VGS = ± 20 V - - ± 100 VDS = 900 V, VGS = 0 V - - 100 VDS = 720 V, VGS = 0 V, TJ = 125 °C - - 500 - - 8.0 Ω 0.6 - - S VGS = 10 V ID = 1.0 Ab VDS = 50 V, ID = 1.0 Ab µA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 10 V ID = 1.7 A, VDS = 360 V, see fig. 6 and 13b - 490 - - 55 - - 18 - - - 38 - - 4.7 Gate-Drain Charge Qgd - - 21 Turn-On Delay Time td(on) - 8.0 - - 21 - - 56 - - 32 - Rise Time Turn-Off Delay Time Fall Time www.vishay.com 2 tr td(off) tf VDD = 450 V, ID = 1.7 A, RG = 18 Ω, VGS = 10 V, see fig. 10b pF nC ns Document Number: 91121 S-Pending-Rev. A, 23-Jun-08 IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT - - 1.7 - - 6.8 - - 1.5 - 350 530 ns - 0.85 1.3 µC Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 1.7 A, VGS = 0 Vb TJ = 25 °C, IF = 1.7 A, dI/dt = 100 A/µsb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Uses IRFBF20/SiHFBF20 data and test conditions. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics Document Number: 91121 S-Pending-Rev. A, 23-Jun-08 Fig. 2 - Typical Output Characteristics www.vishay.com 3 IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L Vishay Siliconix Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 4 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91121 S-Pending-Rev. A, 23-Jun-08 IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L Vishay Siliconix Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 8 - Maximum Safe Operating Area Document Number: 91121 S-Pending-Rev. A, 23-Jun-08 tr td(off) tf Fig. 10b - Switching Time Waveforms www.vishay.com 5 IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L Vishay Siliconix Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T. RG + - IAS V DD VDS 10 V tp 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit IAS Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 Document Number: 91121 S-Pending-Rev. A, 23-Jun-08 IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L Vishay Siliconix Current regulator Same type as D.U.T. 50 kΩ QG 10 V 0.2 µF 12 V 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit Fig. 13a - Basic Gate Charge Waveform Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - • • • • RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. + Period D= + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91121. Document Number: 91121 S-Pending-Rev. A, 23-Jun-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1